2SB1676 Transistors Medium Power Transistor (Motor, Relay drive) (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618. Limits Unit VCBO VCEO −80 −80 −7 −4 V V V A VEBO IC ICP Collector current Collector power dissipation PC Junction temperature Storage temperature * Tj Tstg 1.3 0.8 2.54 0.75 (1) (2) (3) (1) (2) (3) ROHM : TO-220FN * −6 A(Pulse) 2 W(Ta = 25°C) 30 150 W(Tc = 25°C) °C °C −55~+150 2.8 8.0 1.2 2.54 Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage 5.0 14.0 15.0 12.0 φ 3.2 !Absolute maximum ratings (Ta = 25°C) Parameter 4.5 10.0 Single pulse, Pw = 100ms !Packaging specifications and hFE Type Package hFE 2SB1676 Code Basic ordering unit (pieces) TO-220FN 1k~10k 500 !Circuit diagram C B R E R B C E 300Ω : Base : Collector : Emitter !Electrical characteristics (Ta = 25°C) Parameter Symbol BVCEO Min. Typ. Max. −80 - - Unit V Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVEBO −80 −7 - - −10 −10 V V µA µA Collector-emitter saturation voltage VCE(sat) - hFE 1000 - −1.5 10000 V - Transition frequency fT - 20 - MHz Output capacitance Cob - 22 - pF Collector-emitter breakdown voltage DC current transfer ratio ICBO IEBO *1 Measured using pulse current. *2 Transition frequency of the device. Conditions IC = −1mA IC = −50µA IE = −50µA VCB = −80V VEB = −5V IC/IB = −2A/−4mA VCE/IC = −3V/−2A VCE = −5V , IE = 0.5A , f = 10MHz VCB = −10V , IE = 0A , f = 1MHz *1 *1 *2 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)