2SA1779 Silicon PNP Epitaxial Application TO–92 (1) High speed switching Table 1 Ordering Information Type No. hFE ———————————————————— 2SA1779A 35 to 70 ———————————————————— 2SA1779B 60 to 120 ———————————————————— 2SA1779C 3 100 to 200 2 1 ———————————————————— 1. Emitter 2. Collector 3. Base Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO –50 V ——————————————————————————————————————————— Collector to emitter voltage VCEO –35 V ——————————————————————————————————————————— Emitter to base voltage VEBO –5 V ——————————————————————————————————————————— Collector current IC –100 mA ——————————————————————————————————————————— Collector power dissipation PC 0.4 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— 2SA1779 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO –50 — — V IC = –10 µA, IE = 0 ——————————————————————————————————————————— Collector to Emitter breakdown voltage V(BR)CEO –35 — — V IC = –10mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — –1.0 µA VCB = –20 V, IE = 0 ——————————————————————————————————————————— Emitter cutoff current IEBO — — –1.0 µA VEB = –4 V, IE = 0 ——————————————————————————————————————————— DC current transfer ratio 2SA1779A hFE —————— 35 — 70 VCE = –1 V, IC = –10 mA ————————— 2SA1779B 60 —————— ————————— — 2SA1779C 100 — 120 200 ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — –0.25 V IC = –20 mA, IB = –2 mA ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — –0.8 V IC = –10 mA, IB = –1 mA ——————————————————————————————————————————— Collector output capacitance Cob — — 8 pF VCB = –10 V IE = 0 f = 1 MHz ——————————————————————————————————————————— High frequency AC current transfer ratio hfe 2 — — VCE = –10 V, IC = –20 mA f = 100 MHz ——————————————————————————————————————————— Storage time tstg — — 300 ns VCC = –6.3 V IC = IB1 = – IB2 = –20 mA ———————————————————————————————————————————