2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 12 — — V I C = 10 µA, IE = 0 Collector cutoff current I CBO — — 10 µA VCB = 12 V, IE = 0 I CEO — — 1 mA VCE = 8 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 3 V, IC = 0 Collector to emitter saturation voltage VCE(sat) — 70 100 mV I C = 20 mA, IB = 4 mA DC current transfer ratio hFE 100 250 — Collector output capacitance Cob — 1.0 1.5 Note: Marking is “XU–”. 2 VCE = 5 V, IC = 5 mA pF VCB = 5 V, IE = 0, f = 1 MHz 2SC4680 DC Current Transfer Ratio vs. Collector Current 500 DC Current Transfer Ratio hFE Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150 100 50 VCE = 5 V 400 300 200 100 0 1 50 100 150 Ambient Temperature Ta (°C) 0 Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) 2.0 VCE = 5 V 1.6 1.2 0.8 0.4 0 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 1 2 5 10 20 Collector Current IC (mA) 50 1.6 IE = 0 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0.5 1.0 2 5 10 20 Collector to Base Voltage VCB (V) 3 2SC4680 On Resistance vs. Base Current Signal Reduction vs. Frequency 0.5 Shunt Circuit Reduction LS (dB) f = 1 kHz On Resistance Ron (Ω) 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2 5 Base Current IB (mA) 50 VB = 0 0.4 40 0.3 30 Lt 20 0.2 0.1 0 50 10 10 LS 100 200 500 Frequency f (MHz) Signal Reduction vs. Frequency Shunt Circuit Reduction LS (dB) VB = 5 V 16 1.6 1.2 12 0.8 8 Lt 4 0 50 4 LS 0.4 100 200 500 Frequency f (MHz) 0 1000 Transfer Circuit Reduction Lt (dB) 2.0 20 0 1000 Transfer Circuit Reduction Lt (dB) 100 2SC4680 On Resistance Test Circuit Vin 100 µF – 100 µF + – R1 (1 kΩ) Vout + 2.7 kΩ D.U.T. Ron = Vout R1 Vin – Vout 2 nF VB Reduction Test Circuit (Shunt Circuit) Input 2 nF 2 nF Output 2.7 kΩ L1 D.U.T. 2 nF VB L1 : 3 mm inside dia, φ0.2 mm enameled copper wire, 15 turns Reduction Test Circuit (Transfer Circuit) Input 2 nF 2 nF D.U.T. L1 Output L2 2.7 kΩ 2 nF VB L1, L2 : 3 mm inside dia, φ0.2 mm enameled copper wire, 15 turns 5 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 3 – 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.