HITACHI 2SC4680

2SC4680
Silicon NPN Epitaxial
Application
VHF / UHF high frequency switching
Features
• Low Ron and high performance for RF switch.
• Capable of high density mounting.
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4680
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
12
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
12
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 3 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
70
100
mV
I C = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
100
250
—
Collector output capacitance
Cob
—
1.0
1.5
Note: Marking is “XU–”.
2
VCE = 5 V, IC = 5 mA
pF
VCB = 5 V, IE = 0, f = 1 MHz
2SC4680
DC Current Transfer Ratio vs.
Collector Current
500
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
150
100
50
VCE = 5 V
400
300
200
100
0
1
50
100
150
Ambient Temperature Ta (°C)
0
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
2.0
VCE = 5 V
1.6
1.2
0.8
0.4
0
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1
2
5
10
20
Collector Current IC (mA)
50
1.6
IE = 0
f = 1 MHz
1.4
1.2
1.0
0.8
0.6
0.5
1.0
2
5
10
20
Collector to Base Voltage VCB (V)
3
2SC4680
On Resistance vs. Base Current
Signal Reduction vs. Frequency
0.5
Shunt Circuit Reduction LS (dB)
f = 1 kHz
On Resistance Ron (Ω)
50
20
10
5
2
1
0.1
0.2
0.5 1.0
2
5
Base Current IB (mA)
50
VB = 0
0.4
40
0.3
30
Lt
20
0.2
0.1
0
50
10
10
LS
100
200
500
Frequency f (MHz)
Signal Reduction vs. Frequency
Shunt Circuit Reduction LS (dB)
VB = 5 V
16
1.6
1.2
12
0.8
8
Lt
4
0
50
4
LS
0.4
100
200
500
Frequency f (MHz)
0
1000
Transfer Circuit Reduction Lt (dB)
2.0
20
0
1000
Transfer Circuit Reduction Lt (dB)
100
2SC4680
On Resistance Test Circuit
Vin
100 µF
–
100 µF
+ –
R1 (1 kΩ)
Vout
+
2.7 kΩ
D.U.T.
Ron =
Vout
R1
Vin – Vout
2 nF
VB
Reduction Test Circuit (Shunt Circuit)
Input
2 nF
2 nF
Output
2.7 kΩ
L1
D.U.T.
2 nF
VB
L1 : 3 mm inside dia, φ0.2 mm enameled copper wire, 15 turns
Reduction Test Circuit (Transfer Circuit)
Input
2 nF
2 nF
D.U.T.
L1
Output
L2
2.7 kΩ
2 nF
VB
L1, L2 : 3 mm inside dia, φ0.2 mm enameled copper wire, 15 turns
5
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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