2SC4704 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Complementary pair of 2SA1810 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SC4704 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 4 V Collector current IC 0.2 A Collector peak current IC (peak) 0.5 A Collector power dissipation PC 1.25 W PC* 1 10 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 200 — — V IC = 1 mA, RBE = _ Emitter to base breakdown voltage V(BR)EBO 4 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 10 µA VCB = 160 V, IE = 0 60 — 200 1 DC current transfer ratio hFE* Base to emitter voltage VBE — — 1.0 V VCE = 5 V, IC = 30 mA Collector to emitter saturation voltage VCE (sat) — — 1.0 V IC = 30 mA, IB = 3 mA Gain bandwidth product fT 200 300 — MHz VCE = 20 V, IC = 30 mA Collector output capacitance Cob — 5.0 — pF VCB = 30 V, IE = 0, f = 1 MHz Note: 1. The 2SC4704 is grouped by hFE and its specification is as follows. B C 60 to 120 100 to 120 2 VCE = 5 V, IC = 10 mA 2SC4704 Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 12 10 8 6 4 2 0 50 100 Case Temperature TC (°C) 150 Area of Safe Operation 1.0 1 Shot Pulse Ta = 25°C 0.2 s 0m n =1 tio PW era Op 5°C) DC = 2 (T C Collector Current IC (A) 0.5 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1,000 Collector to emitter Voltage VCE (V) Typical Output Characteristics 200 Pc = 1.25 W Collector Current IC (mA) 1.0 1.8 1.6 1.4 1.2 160 2.0 0.8 0.6 0.4 120 80 0.2 mA 40 IB = 0 0 2 4 6 8 10 Collector to emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 1,000 500 5°C 200 TC =7 °C 25 100 5°C –2 50 20 VCE = 5 V Pulse 10 1 2 5 10 20 50 100 200 Collector current IC (mA) 3 2SC4704 Collector to emitter saturation voltage VCE (sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 1.0 lC/lB = 10 0.5 Pulse 5° 0.2 TC 0.1 =7 C –25°C 0.05 25°C 0.02 0.01 1 2 5 10 20 50 100 200 Collector current IC (mA) Typical Transfer Characteristics 200 VCE = 5 V Pulse Collector current IC (mA) 100 50 TC = 75°C 20 25°C 10 –25°C 5 2 1 0.1 0.2 0.5 1.0 2.0 5.0 Base to emitter voltage VBE (V) Gain bandwidth product fT (MHz) Gain Bandwidth Product vs. Collector Current 1,000 500 200 100 50 VCE = 20 V TC = 25°C 20 10 1 2 5 10 20 50 100 200 Collector current IC (mA) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 50 20 10 5 2 1.0 1.0 4 IE = 0 f = 1 MHz 2 5 10 20 50 100 Collector to base voltage VCB (V) 2SC4704 When using this document, keep the following in mind: 1. 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