2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 5 5 V Collector current IC 1.5 1.5 A Collector peak current IC(peak) 3 3 A Collector power dissipation PC 1 1 W 20 20 W PC* 1 Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 2 1. Value at TC = 25°C. 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — V IC = 1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V IE = 1 mA, IC = 0 — — 10 — — 10 µA VCB = 160 V, IE = 0 60 — 320 60 — 200 VCE = 5 V, IC = 150 mA* 2 hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA* 2 VCE(sat) — — 1 — — 1 V IC = 500 mA, 2 IB = 50 mA* Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA* 2 Gain bandwidth product fT — 140 — — 140 — MHz VCE = 5 V, IC = 150 mA* 2 Collector output capacitance — 14 — — 14 — pF VCB = 10 V, IE = 0, f = 1 MHz Collector cutoff current ICBO DC current transfer ratio Collector to emitter saturation voltage hFE1* 1 Cob Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows. 2. Pulse test. B C D 2SD669 60 to 120 100 to 200 160 to 320 2SD669A 60 to 120 100 to 200 — 3 2SD669, 2SD669A Maximum Collector Dissipation Curve Collector power dissipation PC (W) 30 20 10 0 50 100 Case temperature TC (°C) 150 Area of Safe Operation Collector current IC (A) 3 (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 DC Operation(TC = 25°C) 0.1 (120 V, 0.04 A) 0.03 (160 V, 0.02A) 2SD669 2SD669A 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristecs Collector current IC (A) 1.0 5 5. 5.40.5 .0 4 3.5 3.0 0.8 TC = 25°C P C 2.5 0.6 = 2.0 20 W 1.5 0.4 1.0 0.2 0.5 mA IB = 0 0 10 20 30 40 50 Collector to emitter voltage VCE (V) Typical Transfer Characteristics 500 VCE = 5 V 50 20 10 25 –25 100 Ta = 75°C Collector current IC (A) 200 5 2 1 0 4 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 2SD669, 2SD669A DC Current Transfer Ratio vs. Collector Current Ta = 250 75°C 25 200 –25 150 100 50 VCE = 5 V 1 Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 C =7 0.4 0.2 –2 25 5 5° C 0.6 T Collector to emitter saturation voltage VCE(sat) (V) 10 100 300 1,000 3,000 30 Collector current IC (mA) 3 1 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) DC current transfer ratio hFE 300 1.2 IC = 10 IB 1.0 25°C TC = – 25 75 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 5 2SD669, 2SD669A Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) 240 VCE = 5 V Ta = 25°C 200 160 120 80 40 0 10 30 100 300 Collector current IC (mA) 1,000 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 6 10 2 5 20 50 100 Collector to base voltage VCB (V) 2SD669, 2SD669A When using this document, keep the following in mind: 1. 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