2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB1109 2SB1110 Unit Collector to base voltage VCBO –160 –200 V Collector to emitter voltage VCEO –160 –200 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Collector power dissipation PC 1.25 1.25 W Junction temperature Tj 150 150 °C Storage temperature Tstg –45 to +150 –45 to +150 °C 2SB1109, 2SB1110 Electrical Characteristics (Ta = 25°C) 2SB1109 Item Symbol Min Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage Emitter to base breakdown voltage Max Min Max Unit Test conditions –160 — — –200 — — V IC = –10 µA, IE = 0 V(BR)CEO –160 — — –200 — — V IC = –1 mA, RBE = ∞ V(BR)EBO –5 — — –5 — — V IE = –10 µA, IC = 0 — — –10 — — — µA VCB = –140 V, IE = 0 — — — — — –10 µA VCE = –160 V, IE = 0 60 — 320 60 — 320 VCE = –5 V, IC = –10 mA hFE2 30 — — 30 — — VCE = –5 V, IC = –1 mA Base to emitter voltage VBE — — –1.5 — — –1.5 V IC = –5 V, IC = –10 mA Collector to emitter saturation voltage — — –2 — — –2 V IC = –30 mA, IB = –3 mA Gain bandwidth product fT — 140 — — 140 — MHz VCE = –5 V, IC = –10 mA Collector output capacitance — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f = 1 MHz Collector cutoff current ICBO DC current tarnsfer ratio Note: hFE1* 1 VCE(sat) Cob Typ 2SB1110 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Typical Output Characteristics –20 Collector Current IC (mA) Collector power dissipation Pc (W) 1.5 1.0 0.0 –16 –12 –8 –4 IB = 0 0 2 Typ 50 100 Ambient Temperature Ta (°C) 150 0 –120 –110 –100 –90 –80 –70 –60 –50 –40 –30 –20 –10 µA –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 2SB1109, 2SB1110 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 500 25 –20 –25 °C –50 –10 –5 –2 –1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to emitter voltage VBE (V) DC current transfer ratio hFE VCE = –5 V Ta = 7 5 Collector Current IC (mA) –100 VCE = –5 V 200 Ta = 75°C 100 25 50 –25 20 10 5 –1 –2 –5 –10 –20 –50 –100 Collector current IC (mA) Gain Gandwidth Product vs. Collector Current 500 lC = 10 lB –2 VBE (sat) –1.0 TC = –25°C –0.5 25 75 –0.2 75 25 VCE (sat) –0.1 TC = –0.05 –1 °C –25 –2 –5 –10 –20 –50 –100 Collector current IC (mA) Gain bandwidth product fT (MHz) –5 VCE = –10 V 200 100 50 20 10 5 –0.5 –1.0 –2 –5 –10 –20 Collector current IC (mA) –50 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 –1 –2 –5 –10 –20 –50 –100 Collector to base voltage VCB (V) 3 2SB1109, 2SB1110 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 2SB1109, 2SB1110 Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 . Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5