Power Transistors 2SD1753 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio +0.3 1.0±0.2 10.0 –0. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 2.3±0.2 4.6±0.4 Unit VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 6 V Peak collector current ICP 2.5 A Collector current IC 1 A Base current IB 0.1 A dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg W 1.3 150 ˚C –55 to +150 ˚C 3.5±0.2 2.0±0.2 Parameter 2.5 0.75±0.1 1 0.9±0.1 0 to 0.15 2 3 2.3±0.2 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Symbol Conditions min ICBO Emitter cutoff current IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 150 Forward current transfer ratio hFE* VCE = 4V, IC = 0.2A 500 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 0.02A Transition frequency fT VCE = 4V, IC = 0.1A, f = 10MHz FE 0.5 max. 1.1±0.1 Collector cutoff current *h 0 to 0.15 3.0±0.2 4.6±0.4 ■ Electrical Characteristics Unit: mm 1.0 Collector to base voltage 7.0±0.3 1.0 max. Ratings 7.2±0.3 Symbol Collector power TC=25°C 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) 10.2±0.3 Parameter 2 2.5±0.2 1 ■ Absolute Maximum Ratings 0.85±0.1 0.4±0.1 1.0 ● 1.1±0.1 0.75±0.1 2.5±0.2 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 typ VCB = 200V, IE = 0 max Unit 100 µA 100 µA V 2000 1 25 V MHz Rank classification Rank hFE Q P 500 to 1200 800 to 2000 1 Power Transistors 2SD1753 PC — Ta IC — VCE VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 0.5 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 20 15 (1) 10 5 IB=400µA 0.4 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA (2) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 –25˚C 0.3 0.1 0.03 0.3 1 25˚C 300 100 30 10 3 3 ICP t=1ms 300ms 0.1 0.03 0.01 3 10 30 100 300 Collector to emitter voltage VCE 2 1 1000 100 30 10 0.1 0.3 1 3 1 0.01 0.03 10 (V) 0.1 0.3 1 3 Collector current IC (A) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 3 VCE=4V f=10MHz TC=25˚C Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 1 0.3 300 Collector current IC (A) Non repetitive pulse TC=25˚C 0.3 0.1 3 103 1 0.03 1000 Area of safe operation (ASO) 10ms 0.01 0.01 3000 TC=100˚C 1 0.01 0.03 3 100 IC 0.03 fT — IC –25˚C Collector current IC (A) 30 0.1 10000 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1 0.1 3000 1000 25˚C 0.03 –25˚C VCE=4V TC=100˚C 0.01 0.01 25˚C 0.3 hFE — IC IC/IB=25 3 1 Collector current IC (A) 10000 10 TC=100˚C 3 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=25 10 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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