Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit: mm For midium speed power switching Complementary to 2SB0939 (2SB939) and 2SB939A (2SB939A) 2.0 Unit: mm V 80 60 VCEO Unit 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 8 A 0.8±0.1 R0.5 R0.5 0 to 0.4 2.54±0.3 Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 1.1 max. 45 PC 150 ˚C –55 to +150 ˚C Symbol 2SD1262 current 2SD1262A Emitter cutoff current ICBO IEBO Collector to emitter voltage Forward current transfer ratio 1 Conditions min 100 VEB = 7V, IC = 0 2 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 3V, IC = 4A 1000 500 IC = 4A, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf hFE1 R Internal Connection Q 2 VCC = 50V P µA mA 10000 1.5 IC = 4A, IB1 = 8mA, IB2 = –8mA, Unit V 80 VCE = 3V, IC = 8A Rank classification max 100 VCE(sat) Rank typ VCB = 80V, IE = 0 hFE2 FE1 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCB = 60V, IE = 0 Collector to emitter saturation voltage *h 2 (TC=25˚C) Parameter Collector cutoff 5.08±0.5 W 1.3 ■ Electrical Characteristics 14.7±0.5 emitter voltage 2SD1262A VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 +0.4 2SD1262 60 2 3.0–0.2 Collector to Ratings 1 4.4±0.5 2SD1262A 10.5min. (TC=25˚C) +0 base voltage 2.54±0.3 5.08±0.5 Symbol 2SD1262 0.5max. 1.5–0.4 Parameter Collector to 1.1max. 0.8±0.1 10.0±0.3 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 10.0±0.3 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V V 20 MHz 0.5 µs 4 µs 1 µs C B 1000 to 2500 2000 to 5000 4000 to 10000 E Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1262, 2SD1262A PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 40 30 20 Collector to emitter saturation voltage VCE(sat) (V) 12 TC=25˚C 10 Collector current IC (A) Collector power dissipation PC (W) 50 10 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 4 0.5mA 2 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) hFE — IC TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 3 1 25˚C 1000 0.3 0.1 0.03 0.3 1 3 10 t=10ms IC 1ms 3 300ms 1 0.3 0.01 1 3 10 30 2SD1262A 2SD1262 0.1 0.03 100 300 Collector to emitter voltage VCE 100 30 1000 (V) 0.3 1 3 10 30 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP 300 10 0.1 30 103 10 25˚C –25˚C Collector current IC (A) Non repetitive pulse TC=25˚C TC=100˚C 3000 100˚C Area of safe operation (ASO) 30 30000 10000 TC=–25˚C 0.01 0.1 30 VCE=3V IC/IB=500 10 Forward current transfer ratio hFE IC/IB=500 10 Base to emitter saturation voltage VBE(sat) (V) 100000 100 Collector current IC (A) 1 VBE(sat) — IC Collector current IC (A) 2 3 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 3 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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