ETC 2SD1743/2SD1743A

Power Transistors
2SD1743, 2SD1743A
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification
Complementary to 2SB1173 and 2SB1173A
7.0±0.3
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
60
2SD1743
emitter voltage 2SD1743A
80
5
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
15
2.5
+0.3
0.75±0.1
W
1.3
1
150
˚C
–55 to +150
˚C
Symbol
Collector cutoff
2SD1743
current
2SD1743A
Collector cutoff
2SD1743
current
2SD1743A
ICES
ICEO
IEBO
Emitter cutoff current
Collector to emitter
2SD1743
voltage
2SD1743A
Forward current transfer ratio
Conditions
3
2.3±0.2
typ
1:Base
2:Collector
3:Emitter
I Type Package (Y)
max
400
VCE = 80V, VBE = 0
400
VCE = 30V, IB = 0
700
VCE = 60V, IB = 0
700
VEB = 5V, IC = 0
1
60
IC = 30mA, IB = 0
hFE1*
VCE = 4V, IC = 1A
70
15
hFE2
VCE = 4V, IC = 3A
VBE
VCE = 4V, IC = 3A
Collector to emitter saturation voltage
VCE(sat)
IC = 4A, IB = 0.4A
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
FE1
min
VCEO
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
0.9±0.1
0 to 0.15
2
VCE = 60V, VBE = 0
Base to emitter voltage
*h
0.5 max.
1.1±0.1
Electrical Characteristics (TC=25˚C)
Parameter
0 to 0.15
3.0±0.2
4.6±0.4
■
Unit: mm
V
VEBO
dissipation
3.5±0.2
2.0±0.2
60
PC
1.0±0.2
7.0±0.3
Emitter to base voltage
Collector power TC=25°C
10.0 –0.
V
80
VCEO
1:Base
2:Collector
3:Emitter
I Type Package
3
1.0
VCBO
2
Unit
2.5±0.2
2SD1743A
Ratings
4.6±0.4
1
1.0
2SD1743
base voltage
Collector to
(TC=25˚C)
Symbol
Collector to
2.3±0.2
2.5±0.2
Parameter
0.4±0.1
1.0 max.
■ Absolute Maximum Ratings
0.85±0.1
0.75±0.1
7.2±0.3
●
1.1±0.1
10.2±0.3
●
0.8±0.2
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
Unit
µA
µA
mA
V
80
250
2
1.5
V
V
25
MHz
0.4
µs
1.2
µs
0.5
µs
Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
1
Power Transistors
2SD1743, 2SD1743A
PC — Ta
IC — VCE
10
5
100mA
4
80mA
60mA
40mA
3
30mA
2
20mA
10mA
6
TC=100˚C
–25˚C
0.4
1.2
5
4
3
2
1
5mA
(2)
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
4
8
12
16
20
0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
hFE — IC
3000
Transition frequency fT (MHz)
TC=100˚C
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
300
1000
TC=100˚C
25˚C
100
–25˚C
30
10
3
0.1
0.3
1
3
Area of safe operation (ASO)
t=10ms
IC
1ms
300ms
1
0.3
0.01
1
3
10
30
2SD1743A
2SD1743
0.1
0.03
100
300
Collector to emitter voltage VCE
10
1000
(V)
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
3
30
1
0.01 0.03
10
103
10 ICP
100
Collector current IC (A)
100
30
300
3
1
0.01 0.03
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–4
2.4
VCE=10V
f=10MHz
TC=25˚C
3000
1000
3
2.0
fT — IC
VCE=4V
Forward current transfer ratio hFE
10
1.6
10000
IC/IB=10
30
0.8
Base to emitter voltage VBE (V)
10000
100
Collector current IC (A)
Collector current IC (A)
25˚C
1
0
2
VCE=4V
7
IB=150mA
5
Collector current IC (A)
(1)
15
8
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
0
Collector to emitter saturation voltage VCE(sat) (V)
IC — VBE
6
Collector current IC (A)
Collector power dissipation PC (W)
20
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10
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2001 MAR