Power Transistors 2SD1743, 2SD1743A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1173 and 2SB1173A 7.0±0.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 60 2SD1743 emitter voltage 2SD1743A 80 5 V Peak collector current ICP 8 A Collector current IC 4 A Ta=25°C Junction temperature Tj Storage temperature Tstg 15 2.5 +0.3 0.75±0.1 W 1.3 1 150 ˚C –55 to +150 ˚C Symbol Collector cutoff 2SD1743 current 2SD1743A Collector cutoff 2SD1743 current 2SD1743A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SD1743 voltage 2SD1743A Forward current transfer ratio Conditions 3 2.3±0.2 typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max 400 VCE = 80V, VBE = 0 400 VCE = 30V, IB = 0 700 VCE = 60V, IB = 0 700 VEB = 5V, IC = 0 1 60 IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 70 15 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.4A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 min VCEO IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 0.9±0.1 0 to 0.15 2 VCE = 60V, VBE = 0 Base to emitter voltage *h 0.5 max. 1.1±0.1 Electrical Characteristics (TC=25˚C) Parameter 0 to 0.15 3.0±0.2 4.6±0.4 ■ Unit: mm V VEBO dissipation 3.5±0.2 2.0±0.2 60 PC 1.0±0.2 7.0±0.3 Emitter to base voltage Collector power TC=25°C 10.0 –0. V 80 VCEO 1:Base 2:Collector 3:Emitter I Type Package 3 1.0 VCBO 2 Unit 2.5±0.2 2SD1743A Ratings 4.6±0.4 1 1.0 2SD1743 base voltage Collector to (TC=25˚C) Symbol Collector to 2.3±0.2 2.5±0.2 Parameter 0.4±0.1 1.0 max. ■ Absolute Maximum Ratings 0.85±0.1 0.75±0.1 7.2±0.3 ● 1.1±0.1 10.2±0.3 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 Unit µA µA mA V 80 250 2 1.5 V V 25 MHz 0.4 µs 1.2 µs 0.5 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD1743, 2SD1743A PC — Ta IC — VCE 10 5 100mA 4 80mA 60mA 40mA 3 30mA 2 20mA 10mA 6 TC=100˚C –25˚C 0.4 1.2 5 4 3 2 1 5mA (2) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 8 12 16 20 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 Transition frequency fT (MHz) TC=100˚C 1 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) t=10ms IC 1ms 300ms 1 0.3 0.01 1 3 10 30 2SD1743A 2SD1743 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 3 30 1 0.01 0.03 10 103 10 ICP 100 Collector current IC (A) 100 30 300 3 1 0.01 0.03 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 2.4 VCE=10V f=10MHz TC=25˚C 3000 1000 3 2.0 fT — IC VCE=4V Forward current transfer ratio hFE 10 1.6 10000 IC/IB=10 30 0.8 Base to emitter voltage VBE (V) 10000 100 Collector current IC (A) Collector current IC (A) 25˚C 1 0 2 VCE=4V 7 IB=150mA 5 Collector current IC (A) (1) 15 8 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 6 Collector current IC (A) Collector power dissipation PC (W) 20 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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