Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 4 A Collector current IC 2 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 25 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Collector cutoff current 2.7±0.2 W 2 ■ Electrical Characteristics 4.2±0.2 5.5±0.2 2.54±0.25 PC Ta=25°C 16.7±0.3 ● 10.0±0.2 4.0 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● Features Solder Dip ■ Unit: mm max Unit ICES VCE = 60V, VBE = 0 Conditions min typ 200 µA ICEO VCE = 30V, IB = 0 300 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 1 mA Collector to emitter voltage VCEO IC = 30mA, IB = 0 60 hFE1 VCE = 4V, IC = 0.1A 35 hFE2* VCE = 4V, IC = 1A 70 Base to emitter voltage VBE VCE = 4V, IC = 1A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.2A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V V 250 1.2 2 V V 20 MHz 0.2 µs 3.5 µs 0.7 µs Rank classification Rank Q P hFE2 70 to 150 120 to 250 1 Power Transistors 2SD1480 PC — Ta IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) 30 (1) 25 15 (2) IB=100mA 80mA 3 50mA 40mA 30mA 2 20mA 10mA 1 25 50 75 100 125 150 2 4 3 2 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 Transition frequency fT (MHz) 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) t=10ms 3 IC 1ms 1 DC 0.3 0.1 0.03 0.01 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) 10 ICP 100 30 10 3 1 0.1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t 102 3.0 VCE=10V f=1MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.5 0.3 1 0.01 0.03 10 100 30 2.0 fT — IC 1000 TC=100˚C 1.5 VCE=4V Forward current transfer ratio hFE 10 1.0 1000 IC/IB=10 30 3 0.5 Base to emitter voltage VBE (V) 10000 100 Collector current IC (A) Collector current IC (A) 4 0 0 Ambient temperature Ta (˚C) 2 –25˚C 1mA 0 1 TC=100˚C 1 5mA (4) 0 25˚C 5 4 (3) 5 VCE=4V TC=25˚C 20 10 6 Collector current IC (A) 35 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 40 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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