Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 ■ Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.425 3 2 Unit Collector to base voltage VCBO –45 V Collector to emitter voltage VCEO –45 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S-Mini Type Package Marking symbol : B (Ta=25˚C) Parameter Symbol Conditions min typ VCB = –20V, IE = 0 ICBO Collector cutoff current +0.1 Ratings 0 to 0.1 Symbol 0.7±0.1 Parameter 0.15–0.05 0.2 (Ta=25˚C) 0.9±0.1 ■ Absolute Maximum Ratings max Unit –0.1 µA –100 µA ICEO VCE = –10V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –45 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –45 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V VCE = –10V, IC = –2mA 160 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF *h FE 460 – 0.3 – 0.5 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol BQ BR BS 1 Transistor 2SB1218A PC — Ta IC — VCE IC — I B –120 –60 Ta=25˚C –100 160 120 80 40 –50 –80 IB=–300µA –60 –250µA –200µA –40 –150µA –100µA –20 –30 –20 –10 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) IB — VBE –150 IC — VBE –400 VCE=–5V –350 25˚C Collector current IC (mA) –200 Base current IB (µA) –300 Ta=75˚C –25˚C –160 –250 –150 –100 –10 IC/IB=10 –3 –1 Ta=75˚C – 0.3 –120 –200 –450 VCE(sat) — IC –240 VCE=–5V Ta=25˚C –300 Base current IB (µA) Collector to emitter saturation voltage VCE(sat) (V) 0 25˚C – 0.1 –25˚C – 0.03 –80 – 0.01 –40 –50 – 0.003 0 0 0 – 0.6 –1.2 –1.8 0 Base to emitter voltage VBE (V) – 0.4 hFE — IC –1.2 –1.6 –2.0 25˚C –25˚C 200 100 140 120 100 80 60 40 20 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 –100 –300 –1000 Cob — VCB Collector output capacitance Cob (pF) Ta=75˚C –10 8 VCB=–10V Ta=25˚C Transition frequency fT (MHz) 400 –3 Collector current IC (mA) fT — I E 500 0 –1 – 0.001 –1 160 VCE=–10V 300 – 0.8 Base to emitter voltage VBE (V) 600 Forward current transfer ratio hFE –40 –50µA 0 2 VCE=–5V Ta=25˚C Collector current IC (mA) 200 Collector current IC (mA) Collector power dissipation PC (mW) 240 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 7 6 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Transistor 2SB1218A NF — IE NF — IE 6 20 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C VCB=–5V Rg=50kΩ Ta=25˚C 300 hfe 16 4 3 2 100 14 12 h Parameter Noise figure NF (dB) Noise figure NF (dB) 5 18 h Parameter — IE f=100Hz 10 1kHz 8 10 10kHz 6 hie (kΩ) 4 1 hoe (µS) 30 3 2 0 0.01 0.03 0.1 0.3 1 3 10 Emitter current IE (mA) 0 0.1 0.3 1 3 Emitter current IE (mA) 10 1 0.1 hre 0.3 (✕10–4) 1 VCE=–5V f=270Hz Ta=25˚C 3 10 Emitter current IE (mA) h Parameter — VCE 300 hfe IE=2mA f=270Hz Ta=25˚C h Parameter 100 30 hoe (µS) 10 3 1 –1 hre (✕10–4) hie (kΩ) –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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