ETC 2SB1218AQ

Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1819A
Unit: mm
2.1±0.1
■ Features
0.425
0.3–0
0.65
1.3±0.1
+0.1
1.25±0.1
1
0.65
●
High foward current transfer ratio hFE.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2.0±0.2
●
0.425
3
2
Unit
Collector to base voltage
VCBO
–45
V
Collector to emitter voltage
VCEO
–45
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–200
mA
Collector current
IC
–100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–70
S-Mini Type Package
Marking symbol :
B
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
VCB = –20V, IE = 0
ICBO
Collector cutoff current
+0.1
Ratings
0 to 0.1
Symbol
0.7±0.1
Parameter
0.15–0.05
0.2
(Ta=25˚C)
0.9±0.1
■ Absolute Maximum Ratings
max
Unit
–0.1
µA
–100
µA
ICEO
VCE = –10V, IB = 0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–45
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–45
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
VCE = –10V, IC = –2mA
160
*
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7
pF
*h
FE
460
– 0.3
– 0.5
V
Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
1
Transistor
2SB1218A
PC — Ta
IC — VCE
IC — I B
–120
–60
Ta=25˚C
–100
160
120
80
40
–50
–80
IB=–300µA
–60
–250µA
–200µA
–40
–150µA
–100µA
–20
–30
–20
–10
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–10
–12
0
Collector to emitter voltage VCE (V)
IB — VBE
–150
IC — VBE
–400
VCE=–5V
–350
25˚C
Collector current IC (mA)
–200
Base current IB (µA)
–300
Ta=75˚C
–25˚C
–160
–250
–150
–100
–10
IC/IB=10
–3
–1
Ta=75˚C
– 0.3
–120
–200
–450
VCE(sat) — IC
–240
VCE=–5V
Ta=25˚C
–300
Base current IB (µA)
Collector to emitter saturation voltage VCE(sat) (V)
0
25˚C
– 0.1
–25˚C
– 0.03
–80
– 0.01
–40
–50
– 0.003
0
0
0
– 0.6
–1.2
–1.8
0
Base to emitter voltage VBE (V)
– 0.4
hFE — IC
–1.2
–1.6
–2.0
25˚C
–25˚C
200
100
140
120
100
80
60
40
20
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
–30
–100 –300 –1000
Cob — VCB
Collector output capacitance Cob (pF)
Ta=75˚C
–10
8
VCB=–10V
Ta=25˚C
Transition frequency fT (MHz)
400
–3
Collector current IC (mA)
fT — I E
500
0
–1
– 0.001
–1
160
VCE=–10V
300
– 0.8
Base to emitter voltage VBE (V)
600
Forward current transfer ratio hFE
–40
–50µA
0
2
VCE=–5V
Ta=25˚C
Collector current IC (mA)
200
Collector current IC (mA)
Collector power dissipation PC (mW)
240
0
0.1
0.3
1
3
10
30
Emitter current IE (mA)
100
IE=0
f=1MHz
Ta=25˚C
7
6
5
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
Transistor
2SB1218A
NF — IE
NF — IE
6
20
VCB=–5V
f=1kHz
Rg=2kΩ
Ta=25˚C
VCB=–5V
Rg=50kΩ
Ta=25˚C
300
hfe
16
4
3
2
100
14
12
h Parameter
Noise figure NF (dB)
Noise figure NF (dB)
5
18
h Parameter — IE
f=100Hz
10
1kHz
8
10
10kHz
6
hie (kΩ)
4
1
hoe (µS)
30
3
2
0
0.01 0.03
0.1
0.3
1
3
10
Emitter current IE (mA)
0
0.1
0.3
1
3
Emitter current IE (mA)
10
1
0.1
hre
0.3
(✕10–4)
1
VCE=–5V
f=270Hz
Ta=25˚C
3
10
Emitter current IE (mA)
h Parameter — VCE
300
hfe
IE=2mA
f=270Hz
Ta=25˚C
h Parameter
100
30
hoe (µS)
10
3
1
–1
hre (✕10–4)
hie (kΩ)
–3
–10
–30
–100
Collector to emitter voltage VCE (V)
3
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2001 MAR