ETC 2SD1994AR

Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
1.05 2.5±0.1
±0.05
6.9±0.1
4.0
0.8
0.2
0.7
14.5±0.5
0.65 max.
+0.1
2.5±0.5
3
2.5±0.1
2
+0.1
2.5±0.5
1
0.45−0.05
0.45−0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1.0 1.0
■ Features
• Low collector to emitter saturation voltage VCE(sat)
• Output of 2 W to 3 W is obtained with a complementary pair with
2SB1322A
• Allowing supply with the radial taping
(1.45)
0.5
4.5±0.1
0.15
For low-frequency power amplification and driver amplification
Complementary to 2SB1322A
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+− 0.1
0.05
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
(HW Type)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.1
µA
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
60
Collector to emitter voltage
VCEO
IC = 2 mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10 µA, IC = 0
5
V
Forward current transfer ratio *1
hFE1 *2
VCE = 10 V, IC = 500 mA
85
hFE2
VCE = 5 V, IC = 1 A
50
V
340
100
Collector to emitter saturation voltage *1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
Base to emitter saturation voltage *1
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
VCB = 10 V, IE = 0, f = 1 MHz
11
Transition frequency
*1
fT
Collector output capacitance
Cob
MHz
20
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SD1994A
Transistors
PC  Ta
Ta = 25°C
1.25
0.8
0.6
0.4
IB = 10 mA
9 mA
8 mA
7 mA
1.00
6 mA
5 mA
0.75
4 mA
3 mA
0.50
2 mA
0.25
0.2
0
20
40
60
80 100 120 140 160
2
4
IC / IB = 10
1
25°C
−25°C
Ta = 100°C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
3
3
120
100
80
60
40
20
−20−30 −50 −100
Emitter current IE (mA)
2
6
8
10
12
VCE = 10 V
25°C
100°C
0.3
0.1
400
300
Ta = 100°C
25°C
200
−25°C
100
0.03
0.1
0.3
1
3
0
0.01 0.03
10
Collector current IC (A)
30
20
10
1
3
10
1
3
10
VCER  RBE
40
0
0.3
120
IE = 0
f = 1 MHz
Ta = 25°C
50
0.1
Collector current IC (A)
Cob  VCB
Collector output capacitance Cob (pF)
Transition frequency fT (MHz)
140
−10
4
hFE  IC
Ta = −25°C
1
60
160
−2 −3 −5
2
500
10
0.01
0.01 0.03
10
VCB = 10 V
Ta = 25°C
0
−1
0
Base current IB (mA)
IC / IB = 10
fT  IE
180
0
10
30
Collector current IC (A)
200
0.4
VBE(sat)  IC
3
0.1
8
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
VCE(sat)  IC
0.3
6
0.6
0.2
1 mA
0
0.8
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
10
1.0
Forward current transfer ratio hFE
0
VCE = 10 V
Ta = 25°C
Collector to emitter voltage VCER (V)
1.0
0
IC  IB
1.2
Collector current IC (A)
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Collector current IC (A)
Collector power dissipation PC (W)
IC  VCE
1.50
1.2
30
100
Collector to base voltage VCB (V)
IC = 10 mA
Ta = 25°C
100
80
60
40
20
0
0.1
0.3
1
3
10
30
100
Base to emitter resistance RBE (kΩ)
Transistors
2SD1994A
ICEO  Ta
104
Area of safe operation (ASO)
10
VCE = 10 V
Single pulse
Ta = 25°C
3
ICP
Collector current IC (A)
ICEO (Ta)
ICEO (Ta = 25°C)
103
102
10
1
t = 10 ms
IC
t=1s
0.3
0.1
0.03
0.01
0.003
1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
0.001
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3
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2001 MAR