Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage VCBO −45 V Collector to emitter voltage VCEO −35 V Emitter to base voltage VEBO −5 V Peak collector current ICP −1.5 A Collector current IC −1 A Collector power dissipation PC 1.2 *1 1.9±0.1 3.05±0.1 • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 0.5±0.1 0.5±0.1 4.6±0.2 1 2 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B Package 3 W 5 *2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Max Unit ICBO VCB = −20 V, IE = 0 Conditions Min Typ − 0.1 µA ICEO VCE = −20 V, IB = 0 −100 µA Emitter cutoff current IEBO VEB = −5V, IC = 0 −10 µA Collector to base voltage VCBO IC = −10 µA, IE = 0 −45 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −35 V Forward current transfer ratio hFE1 * hFE2 Collector to emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance Cob VCE = −10 V, IC = −500 mA 85 VCE = −5 V, IC = −1 A 50 340 IC = −500 mA, IB = −50 mA − 0.5 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 VCB = −10 V, IE = 0, f = 1 MHz 20 V MHz 30 pF Note) *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SA0885 Power Transistors PC T a IC VCE (1)With a 100×100×2mm Al heat sink (2)Without heat sink TC=25˚C –1.25 4 (1) 3 2 (2) 1 –1.2 IB=–10mA –9mA –8mA –7mA –1.0 –6mA –0.75 –5mA –4mA –0.5 –3mA –0.6 –0.4 –0.2 0 0 0 Ambient temperature Ta (˚C) –2 –1 TC=100˚C –25˚C –0.03 –0.1 –0.3 IC/IB=10 –3 TC=–25˚C –1 100˚C 25˚C –0.3 –0.1 –0.01 –0.01 –1 Collector current IC (A) –0.03 f T IE –0.1 –0.3 Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 10 30 Emitter current IE (mA) 100 300 30 10 3 –0.03 –0.1 –0.3 –1 Collector current IC (A) VCER RBE 40 35 30 25 20 15 10 5 –10 –12 –25˚C 100 1 –0.01 IE=0 f=1MHz TC=25˚C –3 –10 25˚C –100 45 0 –1 –8 VCE=–10V TC=100˚C Cob VCB VCB=–10V 180 f=200MHz TC=25˚C 160 –6 1000 –1 50 3 –4 Base current IB (mA) Collector current IC (A) 200 1 –2 hFE IC –0.03 –0.03 –0.01 –0.01 0 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 25˚C –10 Forward current transfer ratio hFE –3 –0.1 –8 VBE(sat) IC IC/IB=10 –0.3 –6 –10 Base to emitter saturation voltage VBE(sat) (V) –10 –4 Collector to emitter voltage VCE (V) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) –0.8 –1mA 0 20 40 60 80 100 120 140 160 180 200 Transition frequency fT (MHz) –1.0 –2mA –0.25 0 2 VCE=–10V TC=25˚C Collector current IC (mA) 5 IC I B –1.5 Collector current IC (A) Collector power dissipation PC (W) 6 IC=–10mA TC=25˚C –80 –60 –40 –20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Power Transistors 2SA0885 ICEO Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse TC=25˚C –3 Collector current IC (A) ICP ICEO (Ta) ICEO (Ta=25˚C) 103 102 –1 IC t=10ms –0.3 t=1s –0.1 –0.03 –0.01 10 –0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –0.001 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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