2SK1388 N-channel MOS-FET F-III Series 30V > Features - 0,022Ω 35A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 30 35 140 35 ±20 60 150 -55 ~ +150 Unit V A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t V t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=17,5A VGS=4V ID=17,5A VGS=10V ID=17,5A VDS=12V VDS=25V VGS=0V f=1MHz VCC=12V ID=35A VGS=10V RGS=25 Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 30 1,0 Test conditions channel to air channel to case Min. 8 Typ. Max. 1,5 10 0,2 10 0,025 0,016 17 1750 800 400 25 100 300 180 1,35 100 2,5 500 1,0 100 0,037 0,022 Typ. Max. 75 2,08 Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 2630 1200 600 38 150 450 270 2,0 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns V ns Unit °C/W °C/W 2SK1388 N-channel MOS-FET 30V 0,022Ω 35A F-III Series 60W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID → Gate Threshold Voltage vs. Tch ↑ Tch [°C] VDS [V] → ↑ ↑ VGS [V] IF [A] 8 Qg [nC] → Forward Characteristics of Reverse Diode VDS [V] C [nF] → Typical Input Charge ↑ 7 6 VGS(th) [V] 5 ID [A] Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Allowable Power Dissipation vs. TC Zth(ch-c) [K/W] ↑ 10 11 PD [W] ↑ Transient Thermal impedance Tc [°C] → t [s] This specification is subject to change without notice! →