2SK1389 N-channel MOS-FET F-III Series 60V > Features - 0,025Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 60 50 200 50 ±20 125 150 -55 ~ +150 Unit V A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t V t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=50A VGS=10V RGS=25 Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 60 1,0 Test conditions channel to air channel to case Min. 20 Typ. Max. 1,5 10 0,2 10 0,022 0,015 36 2600 800 400 20 130 400 170 1,35 100 2,5 500 1,0 100 0,04 0,025 Typ. Max. 35 1,0 Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com 3900 1200 600 30 200 600 250 2,0 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns V ns Unit °C/W °C/W 2SK1389 N-channel MOS-FET 60V 0,025Ω 50A F-III Series 125W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → This specification is subject to change without notice! t [s] →