2SK2113 GaAs HEMT Application UHF low noise amplifier CMPAK–4 4 Features 3 • HEMT structure • Excellent low noise characteristics NF=0.8dB typ (f=900MHz) • High gain Ga=18dB typ (f=900MHz) • Small package (CMPAK-4) 1 2 1. Source 2. Drain 3. Source 4. Gate Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDS 3.5 V ——————————————————————————————————————————— Gate to source voltage VGSO –3 V ——————————————————————————————————————————— Gate to drain voltage VGDO –3 V ——————————————————————————————————————————— Drain current ID 60 mA ——————————————————————————————————————————— Channel power dissipation Pch 100 mW ——————————————————————————————————————————— Channel temperature Tch 125 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +125 °C ——————————————————————————————————————————— 2SK2113 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Gate to source leakage current IGSS — — -10 µA VDS = 0V, VGS = -3V ——————————————————————————————————————————— Drain current IDSS 12 — 60 mA VDS = 2V, VGS = 0 (Pulse Test) ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) -0.3 — -2.5 V VDS = 2 V, ID = 100µA ——————————————————————————————————————————— Forward transfer admittance |yfs| 30 50 — mS VDS = 2 V, ID = 10mA f=1kHz ——————————————————————————————————————————— Noise figure NF — 0.8 1.2 dB VDS = 2 V, ID = 10mA ———————————————————————————————— Power gain PG 15.5 18 — dB f=900MHz ———————————————————————————————————————————