ETC 5962

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
A
Make corrections on sheet 11 Terminal connections for case outline X. Update
boilerplate to MIL-PRF-38535 requirements.- LTG
02-08-27
APPROVED
Thomas M. Hess
REV
SHEET
REV
SHEET
15
A
A
A
16
17
18
REV STATUS
19
20
REV
A
OF SHEETS
SHEET
1
PMIC N/A
PREPARED BY
Larry T. Gauder
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
2
A
A
3
4
A
5
7
8
9
10
11
12
13
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Monica L. Poelking
6
MICROCIRCUIT, DIGITAL, CMOS, 8-BIT
MICROCONTROLLER, MONOLITHIC SILICON
DRAWING APPROVAL DATE
00-10-05
REVISION LEVEL
A
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1 OF
5962-00518
20
5962-E559-02
14
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962



Federal
stock class
designator
\



RHA
designator
(see 1.2.1)
00518
01



Device
type
(see 1.2.2)
/
Q



Device
class
designator
(see 1.2.3)
Q



Case
outline
(see 1.2.4)
X



Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
Circuit function
80C32
CMOS 8-bit microcontroller
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Q
X
Descriptive designator
CDIP2-T40
CQCC2-J44
Terminals
Package style
40
44
dual-in-line package
leaded chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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REVISION LEVEL
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2
1.3 Absolute maximum ratings. 1/
Supply voltage (VDD) ............................................................................................
Input voltage (VIN)
............................................................................................
Output current (IOUT) ...............................................................................................
Power dissipation (PD) ............................................................................................
Storage temperature range (Tstg)............................................................................
Lead temperature (soldering 10 seconds)..............................................................
Junction temperature (TJ) .......................................................................................
Thermal resistance, junction to case (θJC)..............................................................
-0.3 V to +7.0 V
-0.3 V to VDD +0.3 V
80 mA
0.3 W
-65°C to 150°C
+265°C
165°C
30°C/W
1.4 Recommended operating conditions.
Supply voltage range (VDD).....................................................................................
Case operating temperature range (TC) .................................................................
4.5 V dc to 5.5 V dc
-55°C to +125°C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
1/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
STANDARD
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A
REVISION LEVEL
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SHEET
3
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Functional diagram. The functional diagram shall be as specified on figure 2.
3.2.4 Timing waveforms. The timing waveforms shall be as specified on figure 3.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in
MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered
to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
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REVISION LEVEL
A
SHEET
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3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 105 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
VOH1
IOH = -400 µA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
Min
2.4
VOH2
IOH = -60 µA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
2.4
V
VOH3 1/
IOH = -150 µA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
3.375
V
VOH4 1/
IOH = -25 µA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
3.375
V
VOH5 1/
IOH = -40 µA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
4.05
V
VOH6 1/
IOH = -10 µA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
4.04
V
VOL1
IOL = 3.2 mA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
0.45
V
VOL2
IOL = 1.6 mA
VDD = 4.5 V, VSS = 0.0 V
1, 2, 3
All
0.45
V
Quiescent current
IDD 2/
VDD = 5.5 V, VSS = 0.0 V
f = 30 MHz
1, 2, 3
All
15
mA
Supply current
IDD(S) 3/
VDD = 5.5 V, VSS = 0.0 V
f = 30 MHz
1, 2, 3
All
50
mA
Power down supply current
IDD(PD1)
1/ 4/
VDD = 2.0 V, VSS = 0.0 V
1, 2, 3
All
75
µA
IDD(PD2)
4/
VDD = 5.5 V, VSS = 0.0 V
1, 2, 3
All
75
µA
Low level input leakage
current
IIL
VIN (Under Test) = 0.45 V
VDD = 5.5 V, VSS = 0.0 V
1, 2, 3
All
-10
10
µA
High level input leakage
current
IIH
VIN (Under Test) = 5.5 V
VDD = 5.5 V, VSS = 0.0 V
1, 2, 3
All
-10
10
µA
High output voltage
Low output voltage
Max
V
See footnotes at end of table.
STANDARD
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REVISION LEVEL
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TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
Low level input current
IIL2
VIN (Under Test) = 0.45 V
VIN (Remaining Inputs) = 0.0 V
VDD = 5.5 V, VSS = 0.0 V
1, 2, 3
All
Min
-75
High to low transition
current
IIT
VIN (Under Test) = 2.0 V
VIN (Remaining Inputs) = 0.0 V
VDD = 5.5 V, VSS = 0.0 V
1, 2, 3
All
-750
µA
Input clamp voltage
(to VSS) 1/
VIC1
IIN (Under Test) = 100 µA
VDD = Open, VSS = 0.0 V
1, 2, 3
All
0.2
V
Input clamp voltage
(to VDD) 1/
VIC2
IIN (Under Test) = 100 µA
VDD = 0.0 V, VSS = Open
1, 2, 3
All
Reset resistor
RRST
VDD = 4.5 V
1, 2, 3
All
Functional test 1 5/
Instruction set
Verify truth table without load
VIL = 0.0 V, VIH = 3.0 V
VOUT = 1.5 V
VDD = 4.0 V, VSS = 0.0 V
f = 1.0 MHz
See 4.4.1b
7, 8
All
Functional test 2 5/
Internal register
Verify truth table without load
VIL = 0.0 V, VIH = 3.0 V
VOUT = 1.5 V, f = 1.0 MHz
VDD = 5.5 V, VSS = 0.0 V
See 4.4.1b
7, 8
All
Functional test 3 5/
Interrupts
Verify truth table without load
VIL = 0.8 V, VIH = 2.2 V
VOUT = 1.5 V, f = 1.0 MHz
VDD = 4.5 V, VSS = 0.0 V
See 4.4.1b
7, 8
All
Functional test 4 5/
Timer
Verify truth table without load
VIL = 0.8 V, VIH = 2.2 V
VOUT = 1.5 V, f = 1.0 MHz
VDD = 5.5 V, VSS = 0.0 V
See 4.4.1b
7, 8
All
Functional test 5 5/
Serial port
Verify truth table with load
VIL = 0.0 V, VIH = 3.0 V
VOUT = 1.5 V, f = 1.0 MHz
VDD = 4.5 V, VSS = 0.0 V
See 4.4.1b
Outputs: 1TTL +50 pF
7, 8
All
50
Max
µA
-0.2
V
200
kΩ
See footnotes at end of table.
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7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Functional test 6 5/
External data
Verify truth table with load
VIL = 0.0 V, VIH = 3.0 V
VOUT = 1.5 V, , f = 1.0 MHz
VDD = 5.5 V, VSS = 0.0 V
See 4.4.1b
Outputs: 1TTL +50 pF
7, 8
All
Functional test 7 5/
Program counter
Verify truth table with load
VIL = 0.0 V, VIH = 3.0 V
VOUT = 1.5 V, , f = 12 MHz
VDD = 4.5 V, VSS = 0.0 V
See 4.4.1b
Outputs: 1TTL +50 pF
7, 8
All
Functional test 8 5/
Ram
Verify truth table with load
VIL = 0.0 V, VIH = 3.0 V
VOUT = 1.5 V, , f = 12 MHz
VDD = 5.5 V, VSS = 0.0 V
See 4.4.1b
Outputs: 1TTL +50 pF
7, 8
All
4
All
Input/output capacitance
CIN/COUT
VIN/OUT (Not under test) = 0
V
VDD = VSS = 0.0 V
f = 1.0 MHz, See 4.4.1c
ALE pulse width 6/
tLHLL
Address valid to ALE 6/
tAVLL
f = 30 MHz
VDD = 4.5 V and 5.5 V,
VSS = 0.0 V
See figure 4
Address hold to ALE 6/
tLLAX
ALE to valid Inst. in 6/
tLLIV
PSEN to valid Inst. in 6/
Address to valid Inst. in
6/
Unit
Max
10
pF
9, 10, 11
All
60
ns
9, 10, 11
All
15
ns
9, 10, 11
All
35
ns
9, 10, 11
All
100
ns
tPLIV
9, 10, 11
All
65
ns
tAVIV
9, 10, 11
All
130
ns
See footnotes at end of table.
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REVISION LEVEL
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TABLE I. Electrical performance characteristics – Continued.
Test
Group A
subgroups
Device
type
9, 10, 11
All
Min
135
9, 10, 11
All
235
9, 10, 11
All
90
tAVWL
9, 10, 11
All
115
ns
tAVRL
9, 10, 11
All
115
ns
tLLPL
9, 10, 11
All
25
ns
tPLPH
9, 10, 11
All
80
ns
tPXIX
9, 10, 11
All
tPXAV
9, 10, 11
All
30
ns
tRLRH
9, 10, 11
All
180
ns
tWLWH
9, 10, 11
All
180
ns
tLLAXR
9, 10, 11
All
55
ns
tRHDX
9, 10, 11
All
tRHDZ
9, 10, 11
All
60
tAVDV
9, 10, 11
All
260
tLLRL
9, 10, 11
All
90
tQVWX
9, 10, 11
All
20
ns
tQVWH
9, 10, 11
All
215
ns
tWHQX
9, 10, 11
All
20
ns
tRLAZ
9, 10, 11
All
tWHLH
9, 10, 11
All
Symbol
tRLDV
RD to valid data in 6/
ALE to valid data in 6/
Conditions
-55°C ≤ TC ≤ +125°C
unless otherwise specified
tLLDV
tLLWL
ALE to WR 6/
f = 30 MHz
VDD = 4.5 V and 5.5 V,
VSS = 0.0 V
See figure 4
Limits
Unit
Max
ns
ns
115
ns
Address to WR 6/
Address to RD 6/
ALE to PSEN 1/
PSEN pulse width 1/
0.0
ns
PSEN to in Inst. hold 1/
PSEN to address valid 1/
RD pulse width 1/
WR pulse width 1/
ALE to data address hold
1/
0.0
ns
RD to data hold 1/
RD to data float 1/
Address to valid data in 1/
ns
ns
115
ns
ALE to RD 1/
Data valid to WR 1/
Data setup to WR high 1/
WR to data hold 1/
0.0
ns
40
ns
RD low to address float 1/
20
WR high to ALE high 1/
See footnotes at end of table.
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TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
tRHLH
Conditions
-55°C ≤ TC ≤ +125°C
unless otherwise specified
f = 30 MHz
VDD = 4.5 V and 5.5 V,
VSS = 0.0 V
See figure 4
Group A
subgroups
Device
type
9, 10, 11
All
Min
20
9, 10, 11
All
400
ns
9, 10, 11
All
300
ns
50
RD high to ALE high 1/
Serial port clock cycle time
1/
Out data setup to clock 1/
tQVXH
Clock to out data hold 1/
tXHQX
9, 10, 11
All
Clock to in data hold 1/
tXHDX
9, 10, 11
All
Clock high to in data valid
1/
tXHDV
9, 10, 11
All
tXLXL
Limits
Unit
Max
40
ns
ns
0.0
ns
300
ns
1/ Guaranteed but not tested.
2/ IDD is measured with all output pins disconnected; XTAL1 driven with tCLCH = tCHCL = 5.0 ns, VIL = VSS +0.5 V,
VIH = VDD –0.5V; XTAL2 = NC; EA = RST = VSS; PORT0 = VDD.
3/ IDD(S) is measured with all output pins disconnected; XTAL1 driven with tCLCH = tCHCL = 5.0 ns, VIL = VSS +0.5 V,
VIH = VDD –0.5V; XTAL2 = NC; PORT0 = EA = RST = VSS.
4/ IDD(PD) is measured with all output pins disconnected; EA = PORT0 = VDD; XTAL2 = NC; XTAL1 = RST = VSS.
5/ Functional test includes: Instruction set, Internal registers, Interrupts, Timer, Serial port, External data, Program counter,
Ram, Idle mode, Power-down mode.
Other parameters (guaranteed):
VIL min = -0.5 V
VIL max = 0.2VDD –0.25 V (0.85 V at 5.5 V)
Except pin EA: VIL max = 0.2VDD –0.45 V.
VIH max = VDD +0.5 V
VIH min = 0.2VDD +1.1 V (2.0 V at 4.5 V)
Except pins XTAL1, RESET: VIH min = 0.7VDD +0.2 V.
6/ Measurements shall be performed on a 100 percent basis, Read and Record.
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REVISION LEVEL
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Device type
Case outline
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Device type
Case outline
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
NC = No connection.
Pin Symbol
T2/P1.0
T2EX/P1.1
P1.2
P1.3
P1.4
P1.5
P1.6
P1.7
RST
P3.0/RXD
P3.1/TXD
P3.2/INT0
P3.3/INT1
P3.4/T0
P3.5/T1
P3.6/WR
P3.7/RD
XTAL2
XTAL1
VSS
01
Q
Pin Number
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Pin Symbol
P2.0
P2.1
P2.2
P2.3
P2.4
P2.5
P2.6
P2.7
PSEN
ALE
EA
P0.7
P0.6
P0.5
P0.4
P0.3
P0.2
P0.1
P0.0
VDD
Pin Symbol
NC
T2/P1.0
T2EX/P1.1
P1.2
P1.3
P1.4
P1.5
P1.6
P1.7
RST
P3.0.RXD
NC
P3.1/TXD
P3.2/INT0
P3.3/INT1
P3.4/T0
P3.5/T1
P3.6/WR
P3.7/RD
XTAL2
XTAL1
VSS
01
X
Pin Number
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Pin Symbol
NC
P2.0
P2.1
P2.2
P2.3
P2.4
P2.5
P2.6
P2.7
PSEN
ALE
NC
EA
P0.7
P0.6
P0.5
P0.4
P0.3
P0.2
P0.1
P0.0
VDD
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
A
SHEET
11
NOTE:
1. For this device, the ROM is only externally addressable and by using EA signal requirements.
FIGURE 2. Functional diagram.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
SHEET
12
FIGURE 3. Timing waveforms.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
SHEET
13
FIGURE 3. Timing waveforms – Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
SHEET
14
SHIFT REGISTER TIMING WAVEFORMS
SYMBOL
tXLXL
tQVXH
tXHQX
tXHDX
tXHDV
PARAMETER
Serial Port Clock Time
Output Data Setup to Clock Rising Edge
Output Data Hold After Clock Rising
Edge
Input Data Hold After Clock Rising Edge
Clock Rising Edge to Input Data Valid
MIN
12tCLCL
10tCLCL-133
2tCLCL-117
0
--
MAX
10tLCL-133
UNIT
µs
ns
ns
ns
ns
FIGURE 3. Timing waveforms – Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
SHEET
15
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
A
SHEET
16
4.4.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
subgroups 7 and 8 shall include verifying the functionality of the device.
c.
Subgroup 4 (CIN and COUT measurements) shall be measured only for the initial test and after process or design
changes which may affect input capacitance. A minimum sample of 3 devices with zero rejects shall be required.
TABLE II. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
1/ 1, 2, 3, 4, 5, 6, 7,
8A, 8B, 9, 10, 11
1/ 1, 2, 3, 4, 5,
6, 7,8A, 8B, 9,
10, 11
2/ 1, 2, 3, 4,
5, 6, 7,8A,
8B, 9, 10, 11
Group A test
requirements (see 4.4)
1, 2, 3, 4, 5, 6, 7,
8A, 8B, 9, 10, 11
1, 2, 3, 4, 5, 6,
7,8A, 8B, 9,
10, 11
1, 2, 3, 4, 5,
6, 7,8A, 8B,
9, 10, 11
Group C end-point electrical
parameters (see 4.4)
1, 4, 7, 9
1, 4, 7, 9
1, 2, 3, 4, 5,
6, 7, 8A, 8B,
9, 10, 11
Group D end-point electrical
parameters (see 4.4)
1, 4, 7, 9
1, 4, 7, 9
1, 4, 7, 9
Group E end-point electrical
parameters (see 4.4)
1, 4, 7, 9
1, 4, 7, 9
1, 4, 7, 9
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1 and 7.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
A
SHEET
17
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
c.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535, MIL-HDBK-1331, and as follows:
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
18
Pin descriptions.
Port 0 - Port 0 is an 8-bit open drain bi-directional I/O port. Port 0 pins that have 1’s written to them float and in that state can
be used as high impedance inputs. Port 0 is also the multiplexed low-order address and data bus during accesses to
external program and data memory. In this application, it uses strong internal pull-ups when emitting 1’s. External
pull-ups are required during program verification. Port 0 can sink eight LS TTL inputs.
Port 0 also outputs the code bytes during program verification in the device.
Port 1 - Port 1 is an 8-bit bi-directional I/O port with internal pull-ups. Port 1 pins that have 1’s written to them are pulled high by
the internal pull-ups, and in that state can be used as inputs. As inputs, Port 1 pins that are externally being pulled low
will source current because of the internal pull-ups.
Port 1 also receives the low order address byte during program verification. It can drive CMOS inputs without external
pull-ups. Also in this device Port 1 can sink/source three LS TTL inputs.
Two inputs of Port 1 are also used for Timer/Counter 2:
- P1.0 (T2): External clock inputs.
- P1.1 (T2EX): Trigger input to be reloaded or captured causing Timer/Counter 2 to interrupt.
Port 2 - Port2 is an 8-bit bi-directional I/O port with internal pull-ups. Port 2 pins that have 1’s written to them are pulled high by
the internal pull-ups and in that state can be used as inputs. As inputs, Port 2 pins that are externally being pulled low
will source current because of the internal pull-ups. Port 2 emits the high-order address byte during fetches from
external Program Memory and during accesses to external Data Memory that use 16-bit addresses. In this application,
it uses strong internal pull-ups when emitting 1’s. During access to external Data Memory that use 8-bit addresses,
Port 2 emits the contents of the P2 Special Function Register.
Port 2 can sink/source three LS TTL inputs. It can drive CMOS inputs with external pull-ups. And in this device Port 2
also receives the high-order address bits and control signals during program verification.
Port 3 - Port 3 is an 8-bit bi-directional I/O port with internal pull-ups. Port 3 pins that have 1’s written to them are pulled high by
the internal pull-ups and in that state can be used as inputs. As inputs, Port 3 pins that are externally being pulled low
will source current because of the pull-ups. It also serves the functions of various special features of the MCS-51
Familyas listed below.
PORT PIN
P3.0
P3.1
P3.2
P3.3
P3.4
P3.5
P3.6
P3.7
ALTERNATE FUNCTION
RXD (Serial Input Port)
TXD (Serial Output Port)
INT0 (External Interrupt 0)
INT1 (External Interrupt 1)
T0 (Timer 0 External Input)
T1 (Timer 1 External Input)
WR (External Data Memory Write Strobe)
RD (External Data Memory Read Strobe)
Port 3 can sink/source three LS TTL inputs. It can drive CMOS inputs without external pull-ups.
RST -
A high level on this for two machine cycles while the oscillator is running, resets the device. An internal pull-down
resistor permits Power-On reset using only a capacitor connected to VDD. As soon as the reset is applied (VIN), Ports
1, 2 and 3 are tied to “1”. This operation is achieved asynchronously even if the oscillator does not startup.
ALE -
Address Latch Enable output for latching the low byte of the address during accesses to external memory. ALE is
activated as though for this purpose at a constant rate of 1/6 of the oscillator frequency except during an external
data memory access at which time one ALE pulse is skipped. ALE can sink/source 8 LS TTL inputs. It can drive CMOS
inputs without an external pull-up.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
SHEET
19
Pin descriptions - Continued.
PSEN - Program Store Enable is the read strobe to external Program Memory. PSEN is activated twice each machine cycle
during fetches from external Program Memory (however, when executing out of external Program Memory, two
activations of PSEN are skipped during each access to external Data Memory). PSEN is not activated during fetches
from internal Program Memory. PSEN can sink/source 8 LS TTL inputs. It can drive CMOS inputs without an external
pull-up.
EA -
When EA is held high, the CPU executes out of internal Program Memory (unless the Program Counter exceeds
3FFFH).
When EA is held low, the CPU executes only out of external Program Memory. EA must not be floated.
XTAL1 - Input to the inverting amplifier that forms the oscillator. Receives the external oscillator signal when an external
oscillator is used.
XTAL2 - Output of the inverting amplifier that forms the oscillator and input of the internal clock generator. This pin should be
floated when an external oscillator is used.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00518
A
REVISION LEVEL
SHEET
20
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 02-08-27
Approved sources of supply for SMD 5962-00518 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-0051801QQC
F7400
MC-80C32E-30MQ
5962-0051801VQC
F7400
SC-80C32E-30SV
5962-0051801QXC
F7400
MJ-80C32E-30MQ
5962-0051801VXC
F7400
SJ-80C32E-30SV
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
F7400
Vendor name
and address
Atmel Nantes
La Chantrerie
44306 Nantes CEDEX 3, France
USA Point of contact: Atmel
2325 Orchard Parkway
San Jose, CA 95131
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.