HA22012 GaAs MMIC Low Noise Amplifier for Micro Wave Application ADE-207-217 (Z) 1st. Edition July 1996 Features • • • • • • Suitable for low noise amplifier of PHS (1.9 GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.9 dB typ.) High power gain (13.5 dB typ.) Built–in input and output matching circuits (50Ω) Small surface mount package (MPAK–5) Outline MPAK–5 HA22012 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Supply voltage Vdd 5 V Maximum current Idd 6 mA Power dissipation Pd 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Operation temperature Topr –20 to +70 °C Electrical Characteristics (Ta = 25°C, Vdd = 3V) Item Symbol Min Typ Max Unit Test Conditions Quiescent current Idd 1.5 3 5.5 mA No signal Power gain PG 11.5 13.5 16 dB f = 1.9 GHz Noise figure NF — 1.9 2.5 dB f = 1.9 GHz Pin Typical Performance (Ta = 25°C, Vdd = 3V) Item Symbol Typ Unit Test Conditions Pin VSWR (input) VSWR in 1.6 — f = 1.9 GHz 4 VSWR (output) VSWR out 1.6 — f = 1.9 GHz 1 3rd order intermodulation IM3 58 dB f = 1.9 GHz, UD = 1.9006 GHz distortion 2 Pin = –30 dBm HA22012 Block Diagram in 4 3 Cs 100pF 2 Vdd 5 GND out 1 100pF 3 HA22012 Pin Arrangement GBF Monthly code (variable) Mark type 5 GBF 1 2 3 4 Top View Pin No. Pin name Function 1 RF out RF output 2 GND Ground 3 Cs Bypath capacitor (>100 pF) 4 RF in RF input 5 Vdd Power supply 4 HA22012 Pattern Layout scale 4/1 :0.5mm :0.3mm Front Side view of PCB Pattern scale 4/1 : Capacitor @(100pF) cs GBF RF in RF out Vdd ER=4.8 H=1mm Front Side view of Part Layout 5 HA22012 Main Characteristics Power Gain vs. Frequency Noise Figure vs. Frequency (dB) 20 NF 15 Noise Figure Power Gain PG (dB) Vdd = 3 V Ta = +25°C 10 5 0 1.0 1.5 2.0 4 Vdd = 3 V Ta = +25°C 3 2 1 0 1.0 2.5 Frequency f (GHz) (dBm) 6 Vdd = 3 V Ta = +25°C Pout 4 output 3 input 2 2.0 Frequency f (GHz) 6 2.5 Output Power, 3rd Order Intermodulation Distortion vs. Input Power 20 Vdd = 3 V f = 1.9 GHz 0 ud = 19006 GHz Ta = +25°C –20 Output Power VSWR 5 1.5 2.0 Frequency f (GHz) VSWR vs. Frequency 1 1.0 1.5 2.5 –40 Pout im3 –60 –80 –60 –50 –40 –30 –20 –10 Input Power Pin (dBm) 0 10 HA22012 Power Gain vs. Supply Voltage 4 20 f = 1.9 GHz Ta = +25°C Noise Figure NF (dB) Power Gain PG (dB) f = 1.9 GHz Ta = +25°C 15 10 5 0 2.5 3.0 3.5 4.0 4.5 3 2 1 0 2.5 5.0 Supply Voltage Vdd (V) 6 3.5 4.0 4.5 5.0 Pout @ 1dB Gain Compression, 3rd Order Inter–cept Point (out) vs. Supply Voltage 20 f = 1.9 GHz Ta = +25°C 15 VSWR vs. Supply Voltage P1dB, IP3o (dBm) 5 VSWR 3.0 Supply Voltage Vdd (V) f = 1.9 GHz Ta = +25°C 4 3 2 Noise Figure vs. Supply Voltage IP3o 10 5 P1dB 0 output input 1 2.5 3.0 3.5 4.0 4.5 Supply Voltage Vdd (V) 5.0 –5 2.5 3.0 3.5 4.0 4.5 5.0 Supply Voltage Vdd (V) 7 HA22012 20 Power Gain vs. Ambient Temperature Noise Figure vs. Ambient Temperature 4 Vdd = 3 V f = 1.9 GHz Noise Figure NF (dB) Power Gain PG (dB) Vdd = 3 V f = 1.9 GHz 15 10 5 0 –25 0 25 50 3 2 1 0 –25 75 Ambient Temperature Ta (°C) P1dB, IP3o (dBm) 5 VSWR 50 75 Pout @ 1dB Gain Compression, 3rd Order Inter–cept Point (out) vs. Supply Voltage 20 Vdd = 3 V f = 1.9 GHz 15 Vdd = 3 V f = 1.9 GHz 4 3 2 25 Ambient Temperature Ta (°C) VSWR vs. Ambient Temperature 6 0 IP3o 10 5 P1dB 0 output input 1 –25 0 25 50 Ambient Temperature Ta (°C) 8 75 –5 –25 0 25 50 Ambient Temperature Ta (°C) 75 HA22012 Quiescent Current vs. Ambient Temperature Quiescent Current vs. Supply Voltage 6 6 Vdd = 3 V Quiescent Current Idd (mA) Quiescent Current Idd (mA) Ta = +25°C 5 4 3 2 1 2.5 3.0 3.5 4.0 4.5 Supply Voltage Vdd (V) 5.0 5 4 3 2 1 –25 0 25 50 75 Ambient Temperature Ta (°C) 9 HA22012 Package Dimentions 1.1– 0.1 + 0.2 0.3 Unit: mm 2.9} 0.2 1.9 0.95 0.95 + 0.1 10 0.6 0.6 0.4} 0.1 0.16 – 0.06 0 ~ 0.1 2.8 + 0.2 – 0.3 0.4} 0.1 0.2 1.6 +– 0.1 0.4} 0.1 Hitachi code EIAJ JEDEC MPAK–5 — — HA22012 This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Aer. And it should never be thrown out with general industrial or domestic wastes. When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. 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