HITACHI PF0031

PF0031
MOS FET Power Amplifier Module for Mobile Phone
ADE-208-461 (Z)
1st Edition
July 1, 1996
Application
PF0031: For NMT900 890 to 925 MHz
Features
• High stability: Load VSWR ≈ 20:1
• Low power control current: 400 µA
• Thin package: 5 mm t
Pin Arrangement
• RF-B2
5
4
3
2
5
1
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
PF0031
Internal Diagram and External Circuit
G
G
GND
GND
Pin1
Pin
Pin2
VAPC
C1
Z1
Pin
FB1
Pin3
VDD
FB2
C3
VAPC
Pin4
Pout
C2
VDD
Z2
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor)
C3 = 10 µF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
VDD
17
V
Supply current
I DD
3
A
APC voltage
VAPC
8
V
Input power
Pin
20
mW
Operating case temperature
Tc (op)
–30 to +100
°C
Storage temperature
Tstg
–40 to +110
°C
2
PF0031
Electrical Characteristics (Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
I DS
—
—
500
µA
VDD = 17 V, VAPC = 0 V, Rg = RL= 50 Ω
Total efficiency
ηT
35
40
—
%
Pin = 2 mW, VDD = 12.5 V,
2nd harmonic distortion 2nd H.D.
—
–50
–30
dB
Pout = 6 W (at APC controlled)
3rd harmonic distortion 3rd H.D.
—
–50
–30
dB
RL = Rg = 50 Ω
Input VSWR
VSWR (in)
—
1.5
3
—
Output VSWR
VSWR (out)
—
1.5
—
—
Stability
—
No parasitic oscillation —
Pin = 2 mW, VDD = 12.5 V,
Pout = 6 W (at APC controlled),
RL = Rg = 50 Ω, Output VSWR = 20:1
All phases, t = 20sec
Test System Diagram
S.G
VAPC VDD
Power
Meter
L.P.F
Spectrum
Analyzer
3dB
ATT
Test
Fixture
Directional
Coupler
RF SW.
Power Meter
Directional
Coupler
3
PF0031
Test Fixture Pattern
Unit: mm
26.5
28
2.88
6 4
4
1.5
3.5
2.88
16
4.5 3
VAPC
3.5
16.5
4
15
4
4
2.88
2.88
80
VDD
100
Grass Epoxy Double sided PCB
(t = 1.6 mm, εr = 4.8)
Mechanical Characteristics
Item
Conditions
Spec
Torque for screw up the heatsink flange
M3 Screw Bolts
4 to 6 kg•cm
Warp size of the heatsink flange: S
S=0
+0.3/– 0 mm
S
4
PF0031
Note for Use
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.
It should not be existed any dust between module and heatsink.
MODULE should be separated from PCB less than 1.5 mm.
Soldering temperature and soldering time should be less than 230°C, 10 sec.
(Soldering position spaced from the root point of the lead frame: 2 mm)
Recommendation of thermal joint compounds is TYPE G746.
(Manufacturer: Shin-Etsu Chemical, Co., Ltd.)
To protect devices from electro-static damage, soldering iron, measuring-equipment and human body
etc. should be grounded.
Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.
Don't solder the flange directly.
It should make the lead frame as straight as possible.
The module should be screwed up before lead soldering.
It should not be given mechanical and thermal stress to lead and flange of the module.
When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical
characteristics should be evaluated enough.
Don't washing the module except lead pins.
To get good stability, ground impedance between the module GND flange and PCB GND pattern
should be designed as low as possible.
5
PF0031
Characteristics Curve
Pout, ηT vs. VDD (1)
60
20
f = 890 MHz
Pin = 2 mW
VAPC = 4 V
Tc = 25 °C
50
ηT
12
40
8
30
Pout
Efficiency ηT (%)
Output Power Pout (W)
16
20
4
0
0
4
8
12
16
Supply Voltage VDD (V)
10
20
Pout, ηT vs. VDD (2)
60
20
f = 915 MHz
Pin = 2 mW
VAPC = 4 V
Tc = 25°C
50
40
12
ηT
30
8
Pout
20
4
0
0
6
4
8
12
16
Supply Voltage VDD (V)
10
20
Efficiency ηT (%)
Output Power Pout (W)
16
PF0031
VAPC, ηT, VSWR (in) vs. Frequency
10
4
3
8
Apc Voltage VAPC (V)
V.S.W.R. (in)
5
60
Pin = 2 mW
VDD = 12.5 V
Pout = 6 W
Tc = 25°C
50
ηT
6
40
4
30
VAPC
2
2
Efficiency ηT (%)
6
20
VSWRin
0
890
1
895
905
900
910
10
915
Frequency f (MHz)
Pout, ηT, VSWR (in) vs. Frequency
20
16
4
3
2
Output Power Pout (W)
V.S.W.R. (in)
5
60
Pin = 2 mW
VDD = 12.5 V
VAPC = 4 V
Tc = 25°C
50
ηT
12
40
8
30
Pout
4
Efficiency ηT (%)
6
20
VSWRin
1
0
890
895
900
905
910
10
915
Frequency f (MHz)
7
PF0031
Pout, ηT vs. Pin (1)
20
16
50
ηT
40
12
Pout
8
30
4
20
0
0
2
4
6
8
Efficiency ηT (%)
Output Power Pout (W)
60
f = 890 MHz
VDD = 12.5 V
VAPC = 4 V
Tc = 25°C
10
10
Input Power Pin (mW)
Pout, ηT vs. Pin (2)
16
Output Power Pout (W)
60
f = 915 MHz
VDD = 12.5 V
VAPC = 4 V
Tc = 25°C
50
ηT
12
40
Pout
8
30
4
20
0
0
2
4
6
Input Power Pin (mW)
8
8
10
10
Efficiency ηT (%)
20
PF0031
Pout, ηT vs. VAPC (1)
60
20
f = 890 MHz
Pin = 2 mW
VDD = 12.5 V
Tc = 25°C
50
ηT
40
12
8
30
Pout
20
4
0
Efficiency ηT (%)
Output Power Pout (W)
16
0
2
4
6
Apc Voltage VAPC (V)
8
10
10
Pout, ηT vs. VAPC (2)
60
20
f = 915 MHz
Pin = 2 mW
VDD = 12.5 V
Tc = 25°C
50
40
12
ηT
30
8
Pout
20
4
0
Efficiency ηT (%)
Output Power Pout (W)
16
0
2
4
6
Apc Voltage VAPC (V)
8
10
10
9
PF0031
ηT vs. TC (1)
70
Efficiency ηT (%)
60
f = 890 MHz
VDD = 12.5 V
Pin = 2 mW
Pout = 6 W
50
40
30
20
−40
0
40
80
120
Case Temperature TC (°C)
ηT vs. TC (2)
70
Efficiency ηT (%)
60
f = 915 MHz
VDD = 12.5 V
Pin = 2 mW
Pout = 6 W
50
40
30
20
−40
0
40
80
Case Temperature TC (°C)
10
120
PF0031
Pout vs. TC (1)
Output Power Pout (W)
20
f = 890 MHz
VDD = 12.5 V
Pin = 2 mW
VAPC = 7.0 V
10
0
−40
0
40
80
120
Case Temperature TC (°C)
Pout vs. TC (2)
Output Power Pout (W)
20
f = 915 MHz
VDD = 12.5 V
Pin = 2 mW
VAPC = 7.0 V
10
0
−40
0
40
80
120
Case Temperature TC (°C)
11
PF0031
Package Dimensions
60.5 ± 0.5
57.5 ± 0.5
3
13.0 ± 1
49.8 ± 0.5
0.25
2.3
0.6
5.0 +– 0.3
0.5
4
3.3
2
5±1
1
R1.6
6.35 ± 0.5
11.0 ± 0.3
12.7 ± 0.5
Unit: mm
9.2 ± 1
8.0 ± 1
22.0 ± 1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
12
RF-B2
—
—
16 g
PF0031
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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USA
Tel: 415-589-8300
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Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
13