PF0031 MOS FET Power Amplifier Module for Mobile Phone ADE-208-461 (Z) 1st Edition July 1, 1996 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0031 Internal Diagram and External Circuit G G GND GND Pin1 Pin Pin2 VAPC C1 Z1 Pin FB1 Pin3 VDD FB2 C3 VAPC Pin4 Pout C2 VDD Z2 Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 17 V Supply current I DD 3 A APC voltage VAPC 8 V Input power Pin 20 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –40 to +110 °C 2 PF0031 Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current I DS — — 500 µA VDD = 17 V, VAPC = 0 V, Rg = RL= 50 Ω Total efficiency ηT 35 40 — % Pin = 2 mW, VDD = 12.5 V, 2nd harmonic distortion 2nd H.D. — –50 –30 dB Pout = 6 W (at APC controlled) 3rd harmonic distortion 3rd H.D. — –50 –30 dB RL = Rg = 50 Ω Input VSWR VSWR (in) — 1.5 3 — Output VSWR VSWR (out) — 1.5 — — Stability — No parasitic oscillation — Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled), RL = Rg = 50 Ω, Output VSWR = 20:1 All phases, t = 20sec Test System Diagram S.G VAPC VDD Power Meter L.P.F Spectrum Analyzer 3dB ATT Test Fixture Directional Coupler RF SW. Power Meter Directional Coupler 3 PF0031 Test Fixture Pattern Unit: mm 26.5 28 2.88 6 4 4 1.5 3.5 2.88 16 4.5 3 VAPC 3.5 16.5 4 15 4 4 2.88 2.88 80 VDD 100 Grass Epoxy Double sided PCB (t = 1.6 mm, εr = 4.8) Mechanical Characteristics Item Conditions Spec Torque for screw up the heatsink flange M3 Screw Bolts 4 to 6 kg•cm Warp size of the heatsink flange: S S=0 +0.3/– 0 mm S 4 PF0031 Note for Use • • • • • • • • • • • • • • Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm. It should not be existed any dust between module and heatsink. MODULE should be separated from PCB less than 1.5 mm. Soldering temperature and soldering time should be less than 230°C, 10 sec. (Soldering position spaced from the root point of the lead frame: 2 mm) Recommendation of thermal joint compounds is TYPE G746. (Manufacturer: Shin-Etsu Chemical, Co., Ltd.) To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc. should be grounded. Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts. Don't solder the flange directly. It should make the lead frame as straight as possible. The module should be screwed up before lead soldering. It should not be given mechanical and thermal stress to lead and flange of the module. When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics should be evaluated enough. Don't washing the module except lead pins. To get good stability, ground impedance between the module GND flange and PCB GND pattern should be designed as low as possible. 5 PF0031 Characteristics Curve Pout, ηT vs. VDD (1) 60 20 f = 890 MHz Pin = 2 mW VAPC = 4 V Tc = 25 °C 50 ηT 12 40 8 30 Pout Efficiency ηT (%) Output Power Pout (W) 16 20 4 0 0 4 8 12 16 Supply Voltage VDD (V) 10 20 Pout, ηT vs. VDD (2) 60 20 f = 915 MHz Pin = 2 mW VAPC = 4 V Tc = 25°C 50 40 12 ηT 30 8 Pout 20 4 0 0 6 4 8 12 16 Supply Voltage VDD (V) 10 20 Efficiency ηT (%) Output Power Pout (W) 16 PF0031 VAPC, ηT, VSWR (in) vs. Frequency 10 4 3 8 Apc Voltage VAPC (V) V.S.W.R. (in) 5 60 Pin = 2 mW VDD = 12.5 V Pout = 6 W Tc = 25°C 50 ηT 6 40 4 30 VAPC 2 2 Efficiency ηT (%) 6 20 VSWRin 0 890 1 895 905 900 910 10 915 Frequency f (MHz) Pout, ηT, VSWR (in) vs. Frequency 20 16 4 3 2 Output Power Pout (W) V.S.W.R. (in) 5 60 Pin = 2 mW VDD = 12.5 V VAPC = 4 V Tc = 25°C 50 ηT 12 40 8 30 Pout 4 Efficiency ηT (%) 6 20 VSWRin 1 0 890 895 900 905 910 10 915 Frequency f (MHz) 7 PF0031 Pout, ηT vs. Pin (1) 20 16 50 ηT 40 12 Pout 8 30 4 20 0 0 2 4 6 8 Efficiency ηT (%) Output Power Pout (W) 60 f = 890 MHz VDD = 12.5 V VAPC = 4 V Tc = 25°C 10 10 Input Power Pin (mW) Pout, ηT vs. Pin (2) 16 Output Power Pout (W) 60 f = 915 MHz VDD = 12.5 V VAPC = 4 V Tc = 25°C 50 ηT 12 40 Pout 8 30 4 20 0 0 2 4 6 Input Power Pin (mW) 8 8 10 10 Efficiency ηT (%) 20 PF0031 Pout, ηT vs. VAPC (1) 60 20 f = 890 MHz Pin = 2 mW VDD = 12.5 V Tc = 25°C 50 ηT 40 12 8 30 Pout 20 4 0 Efficiency ηT (%) Output Power Pout (W) 16 0 2 4 6 Apc Voltage VAPC (V) 8 10 10 Pout, ηT vs. VAPC (2) 60 20 f = 915 MHz Pin = 2 mW VDD = 12.5 V Tc = 25°C 50 40 12 ηT 30 8 Pout 20 4 0 Efficiency ηT (%) Output Power Pout (W) 16 0 2 4 6 Apc Voltage VAPC (V) 8 10 10 9 PF0031 ηT vs. TC (1) 70 Efficiency ηT (%) 60 f = 890 MHz VDD = 12.5 V Pin = 2 mW Pout = 6 W 50 40 30 20 −40 0 40 80 120 Case Temperature TC (°C) ηT vs. TC (2) 70 Efficiency ηT (%) 60 f = 915 MHz VDD = 12.5 V Pin = 2 mW Pout = 6 W 50 40 30 20 −40 0 40 80 Case Temperature TC (°C) 10 120 PF0031 Pout vs. TC (1) Output Power Pout (W) 20 f = 890 MHz VDD = 12.5 V Pin = 2 mW VAPC = 7.0 V 10 0 −40 0 40 80 120 Case Temperature TC (°C) Pout vs. TC (2) Output Power Pout (W) 20 f = 915 MHz VDD = 12.5 V Pin = 2 mW VAPC = 7.0 V 10 0 −40 0 40 80 120 Case Temperature TC (°C) 11 PF0031 Package Dimensions 60.5 ± 0.5 57.5 ± 0.5 3 13.0 ± 1 49.8 ± 0.5 0.25 2.3 0.6 5.0 +– 0.3 0.5 4 3.3 2 5±1 1 R1.6 6.35 ± 0.5 11.0 ± 0.3 12.7 ± 0.5 Unit: mm 9.2 ± 1 8.0 ± 1 22.0 ± 1 Hitachi Code JEDEC EIAJ Weight (reference value) 12 RF-B2 — — 16 g PF0031 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Stra§e 3 D-85622 Feldkirchen Mnchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 13