HITACHI PF1010A

PF1010A
MOS FET Power Amplifier Module for P/C LAN
ADE-208-106A (Z)
2nd Edition
July 1996
Features
•
•
•
•
Frequency range: 806 to 824 MHz
Surface mounted small package: 1 cc, 3g with shielded cover
Loe voltage operation: 6 V
Low power control current: 300 µA Typ
Pin Arrangement
• RF-E
5
5
1
3
2 5
4
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
PF1010A
Internal Diagram and External Circuit
Pin1
Pin
Pin2
VAPC
C1
Z1
Pin
Pin3
VDD
FB1
C3
C4
FB2
Pin4
Pout
C2
VDD
VAPC
Z2
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor)
C3 = C4 = 4.7 µF (Tantalum)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
VDD
12
V
Supply current
I DD
2
A
APC voltage
VAPC
3
V
Input power
Pin
20
mW
Operating case temperature
Tc (op)
–30 to +100
°C
Storage temperature
Tstg
–30 to +100
°C
2
PF1010A
Electrical Characteristics (Tc = 25°C)
Item
Symbol
Min
Max
Unit
Test Condition
Drain cutoff current
I DS
—
100
µA
VDD = 12 V, VAPC = 0 V, Rg = RL = 50 Ω
Total efficiency
ηT
39
—
%
f = 806, 824 MHz, Pin = 1 mW,
2nd harmonic distortion 2nd H.D.
—
–30
dBc
VDD = 6 V, Rg = RL = 50 Ω,
3rd harmonic distortion
3rd H.D.
—
–30
dBc
Pout = 1.4 W (at APC controlled),
Input VSWR
VSWR (in) —
3
—
Output power
Pout
0.6
—
W
f = 806, 824 MHz, Pin = 2 dBm,
VDD = 4.8 V, VAPC = 4 V, Rg = RL = 50 Ω
Isolation
—
—
–35
dBm
f = 806, 824 MHz, Pin = 1 mW, VDD = 6 V,
VAPC = 0.5 V, Rg = RL = 50 Ω
Stability
—
No parasitic
oscillation
—
f = 806 to 824 MHz, Pin = 1 mW,
VDD = 4.8 to 7.2 V, Pout ≤ 1.4 W, Rg = 50 Ω,
Load VSWR = 3:1 All phase angles
3
PF1010A
Characteristic Curves
VAPC, ηT, VSWR (in) vs. Frequency
5
55
3
3
2
2.5
50
ηT
45
2
VAPC
Efficiency ηT (%)
V.S.W.R. (in)
4
Apc Voltage VAPC (V)
Pin = 1 mW (0 dBm)
VDD = 6 V
Pout = 1.4 W
40
1.5
VSWRin
1
788
1
806
824
35
842
Frequency f (MHz)
Pout, ηT, VSWR (in) vs. Frequency
5
50
1.5
3
2
1.3
Pout
40
1.1
ηT
30
0.9
VSWRin
1
0.7
788
806
824
Frequency f (MHz)
4
20
842
Efficiency ηT (%)
V.S.W.R. (in)
4
Output Power Pout (V)
Pin = 0.63 mW (—2 dBm)
VDD = 4.8 V
VAPC = 3 V
PF1010A
Pout, ηT vs. Pin (1)
45
1.3
f = 806 MHz
VDD = 4.8 V
VAPC = 3 V
1.2
1.1
40
1.0
0.9
ηT
35
Efficiency ηT (%)
Output Power Pout (W)
Pout
0.8
0.7
0
0.5
1.0
1.5
Input Power Pin (mW)
30
2.0
Pout, ηT vs. Pin (2)
45
1.3
Output Power Pout (W)
1.2
1.1
40
Pout
1.0
0.9
35
Efficiency ηT (%)
f = 824 MHz
VDD = 4.8 V
VAPC = 3 V
0.8
ηT
0.7
0
0.5
1.0
1.5
Input Power Pin (mW)
30
2.0
5
PF1010A
VAPC, ηT vs. Pin (1)
50
3
2.5
ηT
45
2
VAPC
40
Efficiency ηT (%)
Apc Voltage VAPC (V)
f = 806 MHz
VDD = 6 V
Pout = 1.4 W
1.5
1
0
0.5
1.0
1.5
Input Power Pin (mW)
35
2.0
VAPC, ηT vs. Pin (2)
50
3
2.5
ηT
45
2
VAPC
40
1.5
1
0
6
0.5
1.0
1.5
Input Power Pin (mW)
35
2.0
Efficiency ηT (%)
Apc Voltage VAPC (V)
f = 824 MHz
VDD = 6 V
Pout = 1.4 W
PF1010A
Pout, ηT vs. VDD (1)
45
3.3
Output Power Pout (W)
2.8
40
2.3
ηT
1.8
35
Efficiency ηT (%)
f = 806 MHz
Pin = 1 mW
VAPC = 3 V
Pout
1.3
30
0.8
4
5
6
7
Supply Voltage VDD (V)
8
Pout, ηT vs. VDD (2)
45
3.3
Output Power Pout (W)
2.8
40
2.3
ηT
1.8
35
1.3
Efficiency ηT (%)
f = 824 MHz
Pin = 1 mW
VAPC = 3 V
Pout
30
0.8
4
5
6
7
Supply Voltage VDD (V)
8
7
PF1010A
Pout, ηT vs. VAPC (1)
2.5
60
ηT
2
50
40
Pout
1.5
30
Efficiency ηT (%)
Output Power Pout (W)
f = 806 MHz
Pin = 1 mW
VDD = 6 V
1
20
0.5
10
0
1
2
Apc Voltage VAPC (V)
3
Pout, ηT vs. VAPC (2)
2.5
60
2
ηT
50
40
1.5
Pout
30
1
20
0.5
10
0
8
1
2
Apc Voltage VAPC (V)
3
Efficiency ηT (%)
Output Power Pout (W)
f = 824 MHz
Pin = 1 mW
VDD = 6 V
PF1010A
Pout, ηT vs. VAPC (3)
50
1.2
f = 806 MHz
Pin = 0.63 mW
VDD = 4.8 V
40
1.0
Pout
0.9
30
0.8
0.7
Efficiency ηT (%)
Output Power Pout (W)
1.1
ηT
20
0.6
10
0.5
0
1
2
Apc Voltage VAPC (V)
3
Pout, ηT vs. VAPC (4)
50
1.2
f = 824 MHz
Pin = 0.63 mW
VDD = 4.8 V
ηT
40
1.0
0.9
30
0.8
Pout
0.7
Efficiency ηT (%)
Output Power Pout (W)
1.1
20
0.6
10
0.5
0
1
2
Apc Voltage VAPC (V)
3
9
PF1010A
VSWR (in) vs. Pin (1)
5
f = 806 MHz
VDD = 6 V
V.S.W.R. (in)
4
3
Pout=1.4W
2
VAPC=3 V
1
0
0.5
1.0
1.5
Input Power Pin (mW)
2.0
VSWR (in) vs. Pin (2)
5
f = 824 MHz
VDD = 6 V
V.S.W.R. (in)
4
3
Pout=1.4W
2
VAPC=3 V
1
0
10
0.5
1.0
1.5
Input Power Pin (mW)
2.0
PF1010A
2nd H.D, 3rd H.D vs. Pin (1)
−30
−30
f = 806 MHz
VDD = 6 V
Pout = 1.4 W
2nd H.D (dBc)
−50
−50
2nd H.D
3rd H.D (dBc)
−40
−40
−60
−60
3rd H.D
−70
0
0.5
1.0
1.5
2.0
−70
2.5
Input Power Pin (mW)
2nd H.D, 3rd H.D vs. Pin (2)
−30
f = 824 MHz
VDD = 6 V
Pout = 1.4 W
−40
−40
−50
−50
2nd H.D
3rd H.D (dBc)
2nd H.D (dBc)
−30
−60
−60
3rd H.D
−70
0
0.5
1.0
1.5
2.0
−70
2.5
Input Power Pin (mW)
11
PF1010A
Package Dimensions
Unit: mm
25 ± 0.5
22 ± 0.5
3
4
2.4
5.1
7.6
5.1
0.5
0.25
0.3
1.8
3.7 ± 0.5
0.3
2.35 ± 0.5
5 – 3.0
2
1.5
1
12 ± 0.5
1.5
5.8
8.8
1.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
12
RF-E
—
—
3g
PF1010A
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Stra§e 3
D-85622 Feldkirchen
M nchen
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
13