PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A (Z) 2nd Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Loe voltage operation: 6 V Low power control current: 300 µA Typ Pin Arrangement • RF-E 5 5 1 3 2 5 4 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF1010A Internal Diagram and External Circuit Pin1 Pin Pin2 VAPC C1 Z1 Pin Pin3 VDD FB1 C3 C4 FB2 Pin4 Pout C2 VDD VAPC Z2 Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = C4 = 4.7 µF (Tantalum) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 12 V Supply current I DD 2 A APC voltage VAPC 3 V Input power Pin 20 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –30 to +100 °C 2 PF1010A Electrical Characteristics (Tc = 25°C) Item Symbol Min Max Unit Test Condition Drain cutoff current I DS — 100 µA VDD = 12 V, VAPC = 0 V, Rg = RL = 50 Ω Total efficiency ηT 39 — % f = 806, 824 MHz, Pin = 1 mW, 2nd harmonic distortion 2nd H.D. — –30 dBc VDD = 6 V, Rg = RL = 50 Ω, 3rd harmonic distortion 3rd H.D. — –30 dBc Pout = 1.4 W (at APC controlled), Input VSWR VSWR (in) — 3 — Output power Pout 0.6 — W f = 806, 824 MHz, Pin = 2 dBm, VDD = 4.8 V, VAPC = 4 V, Rg = RL = 50 Ω Isolation — — –35 dBm f = 806, 824 MHz, Pin = 1 mW, VDD = 6 V, VAPC = 0.5 V, Rg = RL = 50 Ω Stability — No parasitic oscillation — f = 806 to 824 MHz, Pin = 1 mW, VDD = 4.8 to 7.2 V, Pout ≤ 1.4 W, Rg = 50 Ω, Load VSWR = 3:1 All phase angles 3 PF1010A Characteristic Curves VAPC, ηT, VSWR (in) vs. Frequency 5 55 3 3 2 2.5 50 ηT 45 2 VAPC Efficiency ηT (%) V.S.W.R. (in) 4 Apc Voltage VAPC (V) Pin = 1 mW (0 dBm) VDD = 6 V Pout = 1.4 W 40 1.5 VSWRin 1 788 1 806 824 35 842 Frequency f (MHz) Pout, ηT, VSWR (in) vs. Frequency 5 50 1.5 3 2 1.3 Pout 40 1.1 ηT 30 0.9 VSWRin 1 0.7 788 806 824 Frequency f (MHz) 4 20 842 Efficiency ηT (%) V.S.W.R. (in) 4 Output Power Pout (V) Pin = 0.63 mW (—2 dBm) VDD = 4.8 V VAPC = 3 V PF1010A Pout, ηT vs. Pin (1) 45 1.3 f = 806 MHz VDD = 4.8 V VAPC = 3 V 1.2 1.1 40 1.0 0.9 ηT 35 Efficiency ηT (%) Output Power Pout (W) Pout 0.8 0.7 0 0.5 1.0 1.5 Input Power Pin (mW) 30 2.0 Pout, ηT vs. Pin (2) 45 1.3 Output Power Pout (W) 1.2 1.1 40 Pout 1.0 0.9 35 Efficiency ηT (%) f = 824 MHz VDD = 4.8 V VAPC = 3 V 0.8 ηT 0.7 0 0.5 1.0 1.5 Input Power Pin (mW) 30 2.0 5 PF1010A VAPC, ηT vs. Pin (1) 50 3 2.5 ηT 45 2 VAPC 40 Efficiency ηT (%) Apc Voltage VAPC (V) f = 806 MHz VDD = 6 V Pout = 1.4 W 1.5 1 0 0.5 1.0 1.5 Input Power Pin (mW) 35 2.0 VAPC, ηT vs. Pin (2) 50 3 2.5 ηT 45 2 VAPC 40 1.5 1 0 6 0.5 1.0 1.5 Input Power Pin (mW) 35 2.0 Efficiency ηT (%) Apc Voltage VAPC (V) f = 824 MHz VDD = 6 V Pout = 1.4 W PF1010A Pout, ηT vs. VDD (1) 45 3.3 Output Power Pout (W) 2.8 40 2.3 ηT 1.8 35 Efficiency ηT (%) f = 806 MHz Pin = 1 mW VAPC = 3 V Pout 1.3 30 0.8 4 5 6 7 Supply Voltage VDD (V) 8 Pout, ηT vs. VDD (2) 45 3.3 Output Power Pout (W) 2.8 40 2.3 ηT 1.8 35 1.3 Efficiency ηT (%) f = 824 MHz Pin = 1 mW VAPC = 3 V Pout 30 0.8 4 5 6 7 Supply Voltage VDD (V) 8 7 PF1010A Pout, ηT vs. VAPC (1) 2.5 60 ηT 2 50 40 Pout 1.5 30 Efficiency ηT (%) Output Power Pout (W) f = 806 MHz Pin = 1 mW VDD = 6 V 1 20 0.5 10 0 1 2 Apc Voltage VAPC (V) 3 Pout, ηT vs. VAPC (2) 2.5 60 2 ηT 50 40 1.5 Pout 30 1 20 0.5 10 0 8 1 2 Apc Voltage VAPC (V) 3 Efficiency ηT (%) Output Power Pout (W) f = 824 MHz Pin = 1 mW VDD = 6 V PF1010A Pout, ηT vs. VAPC (3) 50 1.2 f = 806 MHz Pin = 0.63 mW VDD = 4.8 V 40 1.0 Pout 0.9 30 0.8 0.7 Efficiency ηT (%) Output Power Pout (W) 1.1 ηT 20 0.6 10 0.5 0 1 2 Apc Voltage VAPC (V) 3 Pout, ηT vs. VAPC (4) 50 1.2 f = 824 MHz Pin = 0.63 mW VDD = 4.8 V ηT 40 1.0 0.9 30 0.8 Pout 0.7 Efficiency ηT (%) Output Power Pout (W) 1.1 20 0.6 10 0.5 0 1 2 Apc Voltage VAPC (V) 3 9 PF1010A VSWR (in) vs. Pin (1) 5 f = 806 MHz VDD = 6 V V.S.W.R. (in) 4 3 Pout=1.4W 2 VAPC=3 V 1 0 0.5 1.0 1.5 Input Power Pin (mW) 2.0 VSWR (in) vs. Pin (2) 5 f = 824 MHz VDD = 6 V V.S.W.R. (in) 4 3 Pout=1.4W 2 VAPC=3 V 1 0 10 0.5 1.0 1.5 Input Power Pin (mW) 2.0 PF1010A 2nd H.D, 3rd H.D vs. Pin (1) −30 −30 f = 806 MHz VDD = 6 V Pout = 1.4 W 2nd H.D (dBc) −50 −50 2nd H.D 3rd H.D (dBc) −40 −40 −60 −60 3rd H.D −70 0 0.5 1.0 1.5 2.0 −70 2.5 Input Power Pin (mW) 2nd H.D, 3rd H.D vs. Pin (2) −30 f = 824 MHz VDD = 6 V Pout = 1.4 W −40 −40 −50 −50 2nd H.D 3rd H.D (dBc) 2nd H.D (dBc) −30 −60 −60 3rd H.D −70 0 0.5 1.0 1.5 2.0 −70 2.5 Input Power Pin (mW) 11 PF1010A Package Dimensions Unit: mm 25 ± 0.5 22 ± 0.5 3 4 2.4 5.1 7.6 5.1 0.5 0.25 0.3 1.8 3.7 ± 0.5 0.3 2.35 ± 0.5 5 – 3.0 2 1.5 1 12 ± 0.5 1.5 5.8 8.8 1.5 Hitachi Code JEDEC EIAJ Weight (reference value) 12 RF-E — — 3g PF1010A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Stra§e 3 D-85622 Feldkirchen M nchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 13