AD ADR293GR

a
Low Noise Micropower
Precision Voltage Reference
ADR293
PIN CONFIGURATIONS
FEATURES
Voltage Output 5.0 V
6.0 V to 15 V Supply Range
Supply Current 15 mA Max
Initial Accuracy 63 mV Max
Temperature Coefficient 8 ppm/8C Max
Low Noise 15 mV p–p Typ (0.1 Hz to 10 Hz)
High Output Current 5 mA Min
Temperature Range 2408C to 11258C
REF02/REF19x Pinout
8-Lead Narrow Body SO
(R Suffix)
8 NC
NC 1
ADR293
VIN 2
7 NC
TOP VIEW
NC 3 (Not to Scale) 6 VOUT
GND 4
5 NC
NC = NO CONNECT
APPLICATIONS
Portable Instrumentation
Precision Reference for 5 V Systems
A/D and D/A Converter Reference
Solar Powered Applications
Loop-Current Powered Instruments
8-Lead TSSOP
(RU Suffix)
8 NC
NC 1
ADR293
VIN 2
7 NC
TOP VIEW
(Not
to
Scale)
6 VOUT
3
NC
GENERAL DESCRIPTION
The ADR293 is a low noise, micropower precision voltage
reference that utilizes an XFET™ (eXtra implanted junction
FET) reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap
and Zener-based references. Improvements include: one quarter
the voltage noise output of bandgap references operating at the
same current, very low and ultralinear temperature drift, low
thermal hysteresis and excellent long-term stability.
The ADR293 is a series voltage reference providing stable and
accurate output voltage from a 6.0 V supply. Quiescent current
is only 15 µA max, making this device ideal for battery powered
instrumentation. Three electrical grades are available offering
initial output accuracy of ± 3 mV, ± 6 mV, and ± 10 mV. Temperature coefficients for the three grades are 8 ppm/°C, 15 ppm/°C
and 25 ppm/°C max. Line regulation and load regulation are typically 30 ppm/V and 30 ppm/mA, maintaining the reference’s overall high performance.
The ADR293 is specified over the extended industrial temperature range of –40°C to +125°C. This device is available in the
8-lead SOIC, 8-lead TSSOP and the TO-92 package.
GND 4
5 NC
NC = NO CONNECT
3-Lead TO-92
(T9 Suffix)
PIN 1
PIN 2
VIN
GND
PIN 3
VOUT
BOTTOM VIEW
Part Number
Nominal Output Voltage (V)
ADR290
ADR291
ADR292
ADR293
2.048
2.500
4.096
5.000
XFET is a trademark of Analog Devices, Inc.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998
ADR293–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS (V = 16.0 V, T = 1258C unless otherwise noted)
S
A
Parameter
Symbol
Conditions
Min
Typ
Max
Units
INITIAL ACCURACY
“E” Grade
“F” Grade
“G” Grade
VO
IOUT = 0 mA
4.997
4.994
4.990
5.000 5.003
5.006
5.010
V
V
V
LINE REGULATION
“E/F” Grades
“G” Grade
∆VO/∆VIN
6.0 V to 15 V, IOUT = 0 mA
30
40
100
150
ppm/V
ppm/V
LOAD REGULATION
“E/F” Grades
“G” Grade
∆VO/∆ILOAD
VS = 6.0 V, 0 mA to 5 mA
30
40
100
150
ppm/mA
ppm/mA
LONG TERM STABILITY
∆VO
1000 hrs @ +25°C, VS = +15 V
0.2
ppm
NOISE VOLTAGE
eN
0.1 Hz to 10 Hz
15
µV p-p
WIDEBAND NOISE DENSITY
eN
at 1 kHz
640
nV/√Hz
ELECTRICAL SPECIFICATIONS (V = 16.0 V, T = 2258C ≤ T ≤ 1858C unless otherwise noted)
S
A
A
Parameter
Symbol
Conditions
TEMPERATURE COEFFICIENT
“E” Grade
“F” Grade
“G” Grade
TCVO/°C
LINE REGULATION
“E/F” Grades
“G” Grade
LOAD REGULATION
“E/F” Grades
“G” Grade
Min
Typ
Max
Units
IOUT = 0 mA
3
5
10
8
15
25
ppm/°C
ppm/°C
ppm/°C
∆VO/∆VIN
6.0 V to 15 V, IOUT = 0 mA
35
50
150
200
ppm/V
ppm/V
∆VO/∆ILOAD
VS = 6.0 V, 0 mA to 5 mA
20
30
150
200
ppm/mA
ppm/mA
Typ
Max
Units
ELECTRICAL SPECIFICATIONS (V = 16.0 V, T = 2408C ≤ T ≤ 11258C unless otherwise noted)
S
A
A
Parameter
Symbol
Conditions
Min
TEMPERATURE COEFFICIENT
“E” Grade
“F” Grade
“G” Grade
TCVO/°C
IOUT = 0 mA
3
5
10
10
20
30
ppm/°C
ppm/°C
ppm/°C
LINE REGULATION
“E/F” Grades
“G” Grade
∆VO/∆VIN
6.0 V to 15 V, IOUT = 0 mA
40
70
200
250
ppm/V
ppm/V
LOAD REGULATION
“E/F” Grades
“G” Grade
∆VO/∆ILOAD
VS = 6.0 V, 0 mA to 5 mA
20
30
200
300
ppm/mA
ppm/mA
SUPPLY CURRENT
@ +25°C
11
15
15
20
µA
µA
THERMAL HYSTERESIS
TO-92
SO-8
TSSOP-8
160
72
157
ppm
ppm
ppm
Specifications subject to change without notice.
–2–
REV. 0
ADR293
WAFER TEST LIMITS (V = 16.0 V, T = 1258C unless otherwise noted)
S
A
Parameter
Symbol
Conditions
Limits
Units
INITIAL ACCURACY
VO
IOUT = 0 mA
4.990/5.010
V
LINE REGULATION
∆VO/∆VIN
6.0 V < VIN < 15 V, IOUT = 0 mA
150
ppm/V
LOAD REGULATION
∆VO/∆ILOAD
0 mA to 5 mA
150
ppm/mA
No load
15
µA
SUPPLY CURRENT
NOTES
Electrical tests are performed as wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Specifications subject to change without notice.
DICE CHARACTERISTICS
Die Size 0.074 3 0.052 inch, 3848 sq. mils
(1.88 3 1.32 mm, 2.48 sq. mm)
Transistor Count: 52
VIN
1
4
3
GND
REV. 0
2
–3–
VOUT(SENSE)
VOUT(FORCE)
ADR293
ABSOLUTE MAXIMUM RATINGS 1
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
T9, R, RU Package . . . . . . . . . . . . . . . . . 265°C to 1150°C
Operating Temperature Range . . . . . . . . . . 240°C to 1125°C
Junction Temperature Range
T9, R, RU Package . . . . . . . . . . . . . . . . . 265°C to 1125°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 1300°C
Package Type
uJA1
uJC
Units
8-Lead SOIC (R)
3-Lead TO-92 (T9)
8-Lead TSSOP (RU)
158
162
240
43
120
43
°C/W
°C/W
°C/W
NOTE
1
θJA is specified for worst case conditions, i.e., θJA is specified for device in socket
for PDIP, and θJA is specified for a device soldered in circuit board for SOIC
packages.
NOTE
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ORDERING GUIDE
Model
Temperature Range
Package Type
Package Options
ADR293ER, ADR293FR, ADR293GR
ADR293ER-REEL, ADR293FR-REEL, ADR293GR-REEL
ADR293ER-REEL7, ADR293FR-REEL7, ADR293GR-REEL7
ADR293GT9
ADR293GT9-REEL
ADR293GRU-REEL
ADR293GRU-REEL7
ADR293GBC
240°C to 1125°C
240°C to 1125°C
240°C to 1125°C
240°C to 1125°C
240°C to 1125°C
240°C to 1125°C
240°C to 1125°C
125°C
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
3-Lead TO-92
3-Lead TO-92
8-Lead TSSOP
8-Lead TSSOP
DICE
R-8
R-8
R-8
T9
T9
RU-8
RU-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADR293 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
REV. 0
Typical Performance Characteristics– ADR293
5.006
100
VS = 6.0V
3 TYPICAL PARTS
VS = 6.0V TO 15V
LINE REGULATION – ppm/V
OUTPUT VOLTAGE – V
5.004
5.002
5.000
4.998
80
60
40
20
4.996
4.994
250
225
0
25
50
75
100
0
250
125
225
0
TEMPERATURE – 8C
25
50
75
100
125
TEMPERATURE – 8C
Figure 1. VOUT vs. Temperature
Figure 4. Line Regulation vs. Temperature
16
100
VS = 6.0V TO 9.0V
14
LINE REGULATION – ppm/V
TA = +1258C
12
SUPPLY CURRENT – mA
IOUT = 0mA
TA = +258C
10
TA = 2408C
8
6
4
IOUT = 0mA
80
60
40
20
2
0
0
2
4
6
8
10
INPUT VOLTAGE – V
12
14
0
250
16
225
0
25
50
75
100
125
TEMPERATURE – 8C
Figure 2. Supply Current vs. Input Voltage
Figure 5. Line Regulation vs. Temperature
16
0.7
VS = 6.0V
0.6
DIFFERENTIAL VOLTAGE – V
SUPPLY CURRENT – mA
14
12
10
8
TA = +1258C
0.5
0.4
TA = +258C
0.3
0.2
TA = 2408C
0.1
6
250
225
0
25
50
75
100
0
125
0
TEMPERATURE – 8C
Figure 3. Supply Current vs. Temperature
REV. 0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
LOAD CURRENT – mA
4.0
4.5
5.0
Figure 6. Minimum Input-Output Voltage Differential vs.
Load Current
–5–
ADR293
120
200
VS = 6.0V
VS = 6.0V
160
RIPPLE REJECTION – dB
LOAD REGULATION – ppm/mA
100
120
IOUT = 5mA
80
IOUT = 1mA
80
60
40
40
20
0
250
225
0
25
50
75
100
0
10
125
100
FREQUENCY – Hz
TEMPERATURE – 8C
Figure 10. Ripple Rejection vs. Frequency
Figure 7. Load Regulation vs. Temperature
2
50
VS = 6.0V
IL = 0mA
1
40
OUTPUT IMPEDANCE – V
DVOUT FROM NOMINAL – mV
1000
0
TA = +258C
21
TA = 2408C
TA = +1258C
22
20
10
23
24
30
0
1
SOURCING LOAD CURRENT – mA
0
10
10
Figure 8. ∆VOUT from Nominal vs. Load Current
100
1k
FREQUENCY – Hz
10k
Figure 11. Output Impedance vs. Frequency
VOLTAGE NOISE DENSITY – nV/ Hz
1200
VIN = 15V
TA = 1258C
1000
800
10mV p-p
600
400
200
0
10
1s
100
FREQUENCY – Hz
1000
Figure 9. Voltage Noise Density
Figure 12. 0.1 Hz to 10 Hz Noise
–6–
REV. 0
ADR293
IL = 5mA
IL = 5mA
CL = 1nF
5V/DIV
2V/DIV
50ms
1ms
Figure 13. Turn-On Time
Figure 16. Load Transient
IL = 5mA
IL = 5mA
CL = 100nF
5V/DIV
2V/DIV
50ms
1ms
Figure 17. Load Transient
Figure 14. Turn-Off Time
IL = 5mA
1ms
Figure 15. Load Transient
REV. 0
–7–
ADR293
THEORY OF OPERATION
Device Power Dissipation Considerations
The ADR293 uses a new reference generation technique known
as XFET, which yields a reference with low noise, low supply
current and very low thermal hysteresis.
The ADR293 is guaranteed to deliver load currents to 5 mA
with an input voltage that ranges from 5.5 V to 15 V. When this
device is used in applications with large input voltages, care
should be exercised to avoid exceeding the published specifications for maximum power dissipation or junction temperature
that could result in premature device failure. The following
formula should be used to calculate a device’s maximum junction temperature or dissipation:
The core of the XFET reference consists of two junction fieldeffect transistors one of which has an extra channel implant to
raise its pinch-off voltage. By running the two JFETS at the
same drain current, the difference in pinch-off voltage can be
amplified and used to form a highly stable voltage reference.
The intrinsic reference voltage is around 0.5 V with a negative
temperature coefficient of about –120 ppm/K. This slope is
essentially locked to the dielectric constant of silicon and can be
closely compensated by adding a correction term generated in
the same fashion as the proportional-to-temperature (PTAT)
term used to compensate bandgap references. The big advantage over a bandgap reference is that the intrinsic temperature
coefficient is some thirty times lower (therefore less correction is
needed) and this results in much lower noise since most of the
noise of a bandgap reference comes from the temperature compensation circuitry.
The simplified schematic below shows the basic topology of the
ADR293. The temperature correction term is provided by a
current source with value designed to be proportional to absolute temperature. The general equation is:
PD =
T J −TA
θJA
In this equation, TJ and TA are the junction and ambient temperatures, respectively, PD is the device power dissipation, and
θJA is the device package thermal resistance.
Basic Voltage Reference Connections
References, in general, require a bypass capacitor connected
from the VOUT pin to the GND pin. The circuit in Figure 19
illustrates the basic configuration for the ADR293. Note that
the decoupling capacitors are not required for circuit stability.
NC
1
 R1 + R2 + R3 
= ∆VP 
 + I PTAT R3
R1


(
I1
I1
NC
OUTPUT
NC
+
10mF
3
6
4
5
0.1mF
where ∆VP is the difference in pinch-off voltage between the two
FETs and IPTAT is the positive temperature coefficient correction
current.
VIN
7
ADR293
)( )
The process used for the XFET reference also features vertical
NPN and PNP transistors, the latter of which are used as output
devices to provide a very low drop-out voltage.
NC
INPUT
2
VOUT
8
NC
0.1mF
NC = NO CONNECT
Figure 19. Basic Voltage Reference Configuration
Noise Performance
The noise generated by the ADR293 is typically less than
15 µVp-p over the 0.1 Hz to 10 Hz band. The noise measurement is made with a bandpass filter made of a 2-pole high-pass
filter with a corner frequency at 0.1 Hz and a 2-pole low-pass
filter with a corner frequency at 10 Hz.
Turn-On Time
*
VOUT
DVP
R1
IPTAT
R2
Upon application of power (cold start), the time required for the
output voltage to reach its final value within a specified error
band is defined as the turn-on settling time. Two components
normally associated with this are; the time for the active circuits
to settle, and the time for the thermal gradients on the chip to
stabilize. Figure 13 shows the typical turn-on time for the
ADR293.
R3
*EXTRA CHANNEL IMPLANT
VOUT 5
R11 R21R3
R1
GND
3 DVP1 I PTAT 3 R3
Figure 18. Simplified Schematic
–8–
REV. 0
ADR293
APPLICATIONS
A Negative Precision Reference without Precision Resistors
A Precision Current Source
Many times in low power applications, the need arises for a precision current source that can operate on low supply voltages. As
shown in Figure 21, the ADR293 is configured as a precision
current source. The circuit configuration illustrated is a floating
current source with a grounded load. The reference’s output
voltage is bootstrapped across RSET, which sets the output current
into the load. With this configuration, circuit precision is maintained for load currents in the range from the reference’s supply
current, typically 15 µA to approximately 5 mA.
In many current-output CMOS DAC applications where the
output signal voltage must be of the same polarity as the reference voltage, it is often required to reconfigure a currentswitching DAC into a voltage-switching DAC through the use
of a 1.25 V reference, an op amp and a pair of resistors. Using
a current-switching DAC directly requires the need for an
additional operational amplifier at the output to reinvert the
signal. A negative voltage reference is then desirable from the
point that an additional operational amplifier is not required
for either reinversion (current-switching mode) or amplification (voltage-switching mode) of the DAC output voltage. In
general, any positive voltage reference can be converted into a
negative voltage reference through the use of an operational
amplifier and a pair of matched resistors in an inverting configuration. The disadvantage to that approach is that the largest single
source of error in the circuit is the relative matching of the resistors used.
VIN
2
ADR293
6
VOUT
The circuit illustrated in Figure 20 avoids the need for tightly
matched resistors with the use of an active integrator circuit.
In this circuit, the output of the voltage reference provides the
input drive for the integrator. The integrator, to maintain circuit
equilibrium, adjusts its output to establish the proper relationship between the reference’s VOUT and GND. One caveat with
this approach should be mentioned: although rail-to-rail output
amplifiers work best in the application, these operational amplifiers require a finite amount (mV) of headroom when required
to provide any load current. The choice for the circuit’s negative
supply should take this issue into account.
4
ISY
P1
IOUT
VOUT
4
1mF
+5V
100V
100kV
1mF
A1
–VREF
–5V
A1 = 1/2 OP291,
1/2 OP295
Figure 20. A Negative Precision Voltage Reference Uses
No Precision Resistors
REV. 0
RSET
Figure 21. A Precision Current Source
6
GND
6
RL
2
1kV
1mF
ADJUST
VIN
ADR293
R1
GND
–9–
ADR293
Kelvin Connections
Voltage Regulator For Portable Equipment
In many portable instrumentation applications where PC board
cost and area go hand-in-hand, circuit interconnects are very often
of dimensionally minimum width. These narrow lines can cause
large voltage drops if the voltage reference is required to provide
load currents to various functions. In fact, a circuit’s interconnects
can exhibit a typical line resistance of 0.45 mW/square (1 oz. Cu,
for example). Force and sense connections also referred to as
Kelvin connections, offer a convenient method of eliminating the
effects of voltage drops in circuit wires. Load currents flowing
through wiring resistance produce an error (VERROR = R 3 IL ) at
the load. However, the Kelvin connection of Figure 22 overcomes
the problem by including the wiring resistance within the forcing
loop of the op amp. Since the op amp senses the load voltage, op
amp loop control forces the output to compensate for the wiring
error and to produce the correct voltage at the load.
The ADR293 is ideal for providing a stable, low cost and low
power reference voltage in portable equipment power supplies.
Figure 23 shows how the ADR293 can be used in a voltage
regulator that not only has low output noise (as compared to
switch mode design) and low power, but also a very fast recovery
after current surges. Some precautions should be taken in the
selection of the output capacitors. Too high an ESR (effective
series resistance) could endanger the stability of the circuit. A
solid tantalum capacitor, 16 V or higher, and an aluminum electrolytic capacitor, 10 V or higher, are recommended for C1 and
C2, respectively. Also, the path from the ground side of C1 and
C2 to the ground side of R1 should be kept as short as possible.
CHARGER
INPUT
0.1mF
VIN
RLW
2
LEAD-ACID
BATTERY
VIN
ADR293
A1
6
VOUT
+
2
7
3
4
ADR293
IRF9530
6
OP-20
GND
+VOUT
FORCE
+5V, 100mA
4
R2
R1
402kV 402kV
1%
1%
RL
1mF
V OUT 6
6V
+VOUT
SENSE
RLW
GND
R3
510kV
2
VIN
C1
68mF
TANT
+
+ C2
1000mF
ELECT
100kV
4
Figure 23. Voltage Regulator for Portable Equipment
A1 = 1/2 OP295
Figure 22. Advantage of Kelvin Connection
–10–
REV. 0
ADR293
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead TSSOP
(RU-8)
0.122 (3.10)
0.114 (2.90)
5
1
4
PIN 1
8
0.1574 (4.00)
0.1497 (3.80)
0.177 (4.50)
0.169 (4.30)
8
0.102 (2.59)
0.094 (2.39)
0.0098 (0.25)
0.0040 (0.10)
0.0500 0.0192 (0.49)
SEATING (1.27) 0.0138 (0.35) 0.0098 (0.25)
PLANE BSC
0.0075 (0.19)
0.0196 (0.50)
x 45°
0.0099 (0.25)
1
5
0.256 (6.50)
0.246 (6.25)
0.1968 (5.00)
0.1890 (4.80)
0.2440 (6.20)
0.2284 (5.80)
C3347–8–6/98
8-Lead Narrow Body SO
(R-8)
4
PIN 1
8°
0°
0.006 (0.15)
0.002 (0.05)
0.0500 (1.27)
0.0160 (0.41)
SEATING
PLANE
0.0256 (0.65)
BSC
0.0433
(1.10)
MAX
0.0118 (0.30)
0.0075 (0.19)
0.0079 (0.20)
0.0035 (0.090)
88
08
0.028 (0.70)
0.020 (0.50)
3-Lead TO-92
(T9 Suffix)
0.205 (5.20)
0.175 (4.96)
0.135
(3.43)
MIN
0.210 (5.33)
0.170 (4.38)
0.050
(1.27)
MAX
SEATING
PLANE
0.019 (0.482)
0.016 (0.407)
SQUARE
0.500
(12.70)
MIN
0.055 (1.39)
0.045 (1.15)
0.105 (2.66)
0.095 (2.42)
0.105 (2.66)
0.080 (2.42)
1
2
3
BOTTOM VIEW
REV. 0
–11–
0.165 (4.19)
0.125 (3.94)
PRINTED IN U.S.A.
0.105 (2.66)
0.080 (2.42)