Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10␣ GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields virtually flat detection sensitivity from 10 to 30␣ GHz with good performance from 30 to 110␣ GHz. In a wideband matched detector, in which a shunt 50␣ Ω resistor is used in front of the diode, voltage sensitivity (γ) is calculated to be 1␣ m V/µW. Where a high-Q reactive impedance matching network is substituted for the shunt 50␣ Ω resistor, values of γ approaching 25␣ m V/µW can be expected. • Lower Temperature Coefficient than Silicon • Durable Construction — Typical 6␣ gram beamlead strength • Operation to 110␣ GHz Description Hewlett-Packard’s HSCH-9161 detector diode is a beamlead, GaAs device fabricated using the modified barrier integrated diode (MBID) process[1]. This diode is designed for zero bias detecting applications at frequencies through 110␣ GHz. It can be mounted in ceramic microstrip (MIC), finline and coplanar waveguide circuits. [1] The diode structure and process are covered by U.S. Patent No.␣ 4,839,709 issued to Mark Zurakowski on June 13, 1989, and assigned to Hewlett-Packard. 231 (9.1) 250 (9.8) 231 (9.1) 250 (9.8) 120 (4.7) ALL DIMENSIONS IN MICRONS. In applications below 10␣ GHz where DC bias is not available and where temperature sensitivity is a design consideration, the HSCH9161 offers superior stability when compared to silicon zero bias Schottky diodes. Bonding and Handling For more detailed information, see HP Application Note 999, “GaAs MMIC Assembly and Handling Guidelines.” 3-83 5965-8854E Assembly Techniques HSCH-9161 Absolute Maximum Ratings, TA = 25°C Symbol Parameters/Conditions Units Min. Typ. Top Operating Temp. Range °C –65 175 Tstg Storage Temp. Range °C –65 200 PB Burnout Power dBm Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 992, ”Beam Lead Attachment Methods,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.” Max. 20 DC Specifications/Physical Properties, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. Cj RV γ — Junction Capacitance pF Test Conditions: f = 1 GHz Video Resistance kΩ 1.8 Test Conditions: Zero Bias Voltage Sensitivity mV/µW 0.5 Test Conditions: Zero Bias, 10 GHz, shunt 50 Ω input matching resistor Beamlead Strength grams 3 Small Signal Linear Model 7.5 SPICE Parameters Because of the high leakage of this diode under reverse bias, it must be modelled as an anti-parallel pair. 0.011 pF 0.035 pF 0.3 nH HSCH9161 50 Ω R v = Rj + Rs .035 Rj D1 D2 D1 represents the characteristic of the HSCH-9161 under forward bias and D2 (in the forward direction) gives the V-I curve of the HSCH-9161 under reverse bias. Parameter BV CJO EG IBV IS N RS PB (VJ) PT (XTI) M 3-84 Units V pF eV A A Ω V D1 10 0.030 1.42 10E-12 12 x 10E -6 1.2 50 0.26 2 0.5 D2 10 0.030 1.42 10E-12 84 x 10E -6 40.0 10 0.26 2 0.5 HSCH-9161 Typical Performance 1.0 16 14 10 1 0.1 50 Ω 50 Ω 0.8 12 GAMMA (mV/µW) VIDEO RESISTANCE (KΩ) FORWARD CURRENT (mA) 100 10 Maximum 8 6 0.6 0.4 Typical 4 0.2 2 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage. 1.0 0 100 K Frequency = 10 GHz 0 10 20 30 40 50 60 70 80 TEMPERATURE (°C) Figure 2. Typical Variation of Video Resistance vs. Temperature. 3-85 0 0 10 20 30 40 50 60 70 80 TEMPERATURE (°C) Figure 3. Calculated Variation of Voltage Sensitivity vs. Temperature.