PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications HEXFET® Chipset for DC-DC Converters D Description These new devices employ advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. G Both the IRLR8103 and IRLR8503 have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103 offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infrared, convection, or wave soldering techniques. Power dissipation of greater than 80W is possible in a typical PCB mount application. D-Pak S DEVICE RATINGS (typ.) IRLR8103 IRLR8503 30V 30V RDS(on) 6 mΩ 12 mΩ QG 45 nC 15 nC Qsw 20.3 nC 5.4 nC Qoss 23 nC 23 nC VDS Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage TA = 25°C Current (VGS ≥ 10V) TL = 90°C Pulsed Drain Current ID IDM TA = 25°C PD TL = 90°C Junction & Storage Temperature Range IRLR8503 30 VGS Continuous Drain or Source Power Dissipation IRLR8103 VDS Units V ±20 89 49 61 34 350 196 89 62 42 30 TJ, TSTG –55 to 150 A W °C Continuous Source Current (Body Diode) IS 89 49 Pulsed Source Current ISM 350 196 A Thermal Resistance Parameter Maximum Junction-to-Ambient PCB Maximum Junction-to-Case www.irf.com R θJA R θJC Revised 1/13/00 Max. 50 1.4 2.0 Units °C/W °C/W 1 IRLR8103/IRLR8503 Electrical Characteristics IRLR8103 Parameter IRLR8503 Min Typ Max Min Typ Max Units 30 – – V VGS = 0V, ID = 250µA 12 16 mΩ VGS = 10V, ID = 15A mΩ V VGS = 4.5V, ID = 15A VDS = VGS,ID = 250µA Drain-to-Source Breakdown Voltage* BVDSS 30 – – Static Drain-Source RDS(ON) – 6 7.0 on Resistance* Gate Threshold Voltage* VGS(th) – 2.0 7 – 8.5 – 1.0 14 – 18 – Drain-Source Leakage IDSS – – 30 – – 30 – – 150 – – 150 Current* Conditions VDS = 24V, VGS = 0 µA VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current* IGSS – – ±100 – – ±100 Total Gate Chg Cont FET* QG – 50 – – 15 – Total Gate Chg Sync FET* QG – 45 – – 13 – VGS = 5V, VDS< 100mV Pre-Vth Gate-Source Charge QGS1 – 17 – – 3.7 – VDS = 16V, ID = 15A Post-Vth Gate-Source Charge QGS2 – 4.3 – – 1.3 – Gate to Drain Charge QGD – 16 – – 4.1 – Switch Chg(Qgs2 + Qgd)* Qsw – 20.3 – – 5.4 – Output Charge* Qoss – 23 – – 23 – Gate Resistance RG – 1.5 – – 2.0 – Turn-on Delay Time td(on) – TBD – – TBD – Rise Time tr – TBD – – TBD – Turn-off Delay Time td (off) – TBD – – TBD – Fall Time tf – TBD – – TBD – Input Capacitance Ciss – TBD – – TBD – Output Capacitance Coss – TBD – – TBD – Reverse Transfer Capacitance Crss – TBD – – TBD – Min Typ Max Min Typ nA VGS = ±20V VGS=5V, ID=15A, VDS=16V nC VDS = 16V, VGS = 0 Ω VDD = 16V, ID = 15A ns VGS = 5V Clamped Inductive Load See test diagram Fig 19. pF VDS = 16V, VGS = 0 Source-Drain Rating & Characteristics Parameter Max Units Diode Forward Voltage* VSD – – 0.9 – – 1.0 Reverse Recovery Charge Qrr – 100 – – 89 – Reverse Recovery Charge (with Parallel Schottky) Qrr(s) V 77 – – 75 – IS = 15A, VGS = 0V di/dt ~ 700A/µs nC – Conditions VDS = 16V, VGS = 0V, IS = 15A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Calculated continuous current based on maximum allowable Junction temperature; packagle limitation current = 20A * Devices are 100% tested to these parameters. www.irf.com IRLR8103/IRLR8503 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LE A D A S S IG N M E N T S 1 - GATE 3 0.51 (.020) M IN. -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) 2 - D R A IN 3 - SOURCE 4 - D R A IN 0.58 (.023) 0.46 (.018) M A M B N O TE S : 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2.28 (.090) 4.57 (.180) 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A . 4 D IM E N S IO N S S H O W N A RE B E F O R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.006). Part Marking Information TO-252AA (D-PARK) E XA M P L E : TH IS IS A N IR F R 1 20 W IT H A S S E M B LY LOT CODE 9U1P IN TE R N A TIO N A L R E C T IF IE R LO G O A IR F R 1 20 9U A S S E M B LY LOT CODE www.irf.com F IR S T P O R TIO N OF PART NUMBER 1P S E C O N D P O R TIO N OF PART NUMBER 3 IRLR8103/IRLR8503 Tape & Reel Information TO-252AA TR TRR 1 6.3 ( .6 41 ) 1 5.7 ( .6 19 ) 12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 ) F E E D D IR E C T IO N TRL 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NOTES : 1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R . 2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 1 3 IN C H 16 m m NO TES : 1. O U T L IN E C O N F O R M S T O E IA -4 81 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 11/98 4 www.irf.com