PD - 94279 IRF7822 HEXFET® Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 T o p V ie w DEVICE CHARACTERISTICSU IRF7822 RDS(on) 5.0mΩ QG 44nC Qsw 12nC Qoss 27nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25°C Current (VGS ≥ 4.5V) TA = 70°C Pulsed Drain CurrentQ Power Dissipation TA = 25°C Symbol IRF7822 VDS 30 VGS ±12 ID 18 IDM 150 PD 3.1 13 TA = 70°C Units V A W 3.0 TJ, TSTG –55 to 150 °C Continuous Source Current (Body Diode) IS 3.8 A Pulsed Source CurrentQ ISM 150 Parameter Maximum Junction-to-AmbientS RθJA Max. 40 Units °C/W Maximum Junction-to-Lead RθJL 20 °C/W Junction & Storage Temperature Range Thermal Resistance www.irf.com 1 07/11/01 IRF7822 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage BVDSS Static Drain-Source on Resistance RDS(on) Gate Threshold Voltage VGS(th) Drain-Source Leakage Current IDSS Min Typ Max Units 30 – – V 5.0 6.5 mΩ VGS = 4.5V, ID = 15AR V VDS = VGS,I D = 250µA 1.0 30 Current* 150 Conditions VGS = 0V, ID = 250µA VDS = 24V, VGS = 0 µA VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current IGSS ±100 Total Gate Chg Cont FET QG 44 Total Gate Chg Sync FET QG 38 VGS = 5.0V, VDS< 100mV Pre-Vth Gate-Source Charge QGS1 13 VDS = 16V, ID = 15A Post-Vth Gate-Source Charge QGS2 3.0 Gate to Drain Charge QGD 9.0 Switch Chg(Qgs2 + Qgd) Qsw 12 Output Charge Qoss 27 Gate Resistance RG 1.5 Turn-on Delay Time td (on) 15 Rise Time tr 5.5 Turn-off Delay Time td 22 Fall Time tf (off) nA 60 VGS = ±12V VGS=5.0V, ID=15A, VDS =16V nC VDS = 16V, VGS = 0 Ω VDD = 16V, I D = 15A ns VGS = 5.0V Clamped Inductive Load 12 Input Capacitance Ciss – 5500 – Output Capacitance Coss – 1000 – Reverse Transfer Capacitance Crss – 300 – Typ Max Units 1.0 V IS = 15AR, VGS = 0V nC di/dt ~ 700A/µs pF VDS = 16V, VGS = 0 Source-Drain Rating & Characteristics Parameter Min Diode Forward Voltage* VSD Reverse Recovery ChargeT Qrr Reverse Recovery Charge (with Parallel Schottky)T Qrr(s) Notes: 2 120 Conditions VDS = 16V, VGS = 0V, IS = 15A 108 nC di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Q Repetitive rating; pulse width limited by max. junction temperature. R Pulse width ≤ 400 µs; duty cycle ≤ 2%. S When mounted on 1 inch square copper board T Typ = measured - Qoss UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. www.irf.com IRF7822 6 ID = 15A 5 1.5 1.0 0.5 0.0 -60 -40 -20 V GS = 4.5V 0 20 40 60 4 2 1 0 80 100 120 140 160 0 TJ , Junction Temperature ( °C) 10 20 30 40 50 QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 100000 0.010 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd 0.009 Coss = Cds + Cgd 0.008 C, Capacitance(pF) R DS(on) , Drain-to -Source On Resistance ( Ω ) ID = 15A VDS = 24V VGS, Gate-to-Source Voltage (V) R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 10000 0.007 ID = 15A 0.006 Ciss Coss 1000 0.005 Crss 0.004 100 0.003 3.0 4.0 5.0 6.0 VGS, Gate -to -Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage www.irf.com 7.0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage 3 IRF7822 100 T J = 175°C ISD , Reverse Drain Current (A) ID, Drain-to-Source Current (Α ) 100.00 10.00 T J = 25°C TJ = 150 ° C 10 TJ = 25 ° C 1 VDS = 15V 20µs PULSE WIDTH 1.00 1.0 2.0 3.0 4.0 5.0 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 1.2 VSD ,Source-to-Drain Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 (Z thJA) D = 0.50 10 0.20 0.10 Thermal Response 0.05 1 0.02 0.01 P DM 0.1 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 / t 2 J = P DM x Z thJA 1 +T A 10 100 t 1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7822 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0.2 5 (.0 10 ) 4 M A M θ e1 K x 45 ° -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. M IN M AX .0532 .0688 1 .35 1 .75 .0040 .0098 0 .10 0 .25 B .014 .018 0 .36 0 .46 C .0 075 .0 098 0 .19 0.25 D .1 89 .1 96 4 .80 4.98 E .150 .157 3 .81 3 .99 e1 A M IL LIM E T E R S MAX A1 e θ IN C H E S M IN .050 B A S IC 1.2 7 B A S IC .025 B A S IC 0.6 35 B A S IC H .2 284 .2 440 K .011 .019 0 .28 5 .80 0 .48 6.20 L 0 .16 .050 0 .41 1.27 θ 0° 8° 0° 8° R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 5 IRF7822 SO-8 Tape and Reel T E R M INA L NU M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IRE C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0 .0 0 (1 2 .9 92 ) M AX . 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L LIN G D IM E N S IO N : M ILL IM E T E R. 2 . OU T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/01 6 www.irf.com