Infrared Light Emitting Diodes LNA2701L (LN159) GaAs Bi-directional Infrared Light Emitting Diode Unit : mm 8˚ 8˚ 26 26 .5 ˚ For light source of VCR (VHS System) .5˚ 0.5 max. Two-way directivity 2.8±0.2 2-C0.5 8˚ ø1.4±0.2 2-R0.7 1.0 Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.8 0.15 2-0.7 max. 0.5±0.1 2-0.5±0.1 (1.5) Applications 16.9±1.0 Not soldered 2.0 Thin type package modified from LN59 8˚ Long lifetime, high reliability 8˚ Small resin package 2.8±0.2 1.3±0.2 8˚ 3.8±0.2 2.4±0.2 0.8 High-power output, high-efficiency : PO = 1.8 mW (min.) 8˚ Features 2 1 2.0 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +65 ˚C Storage temperature Tstg – 30 to +85 ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ max Unit Ie* IF = 50mA Peak emission wavelength λP IF = 20mA 940 nm Spectral half band width ∆λ IF = 20mA 50 nm Forward voltage (DC) VF IF = 50mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Radiant intensity at center 1.2 mW/sr 35 1.5 V 10 µA pF Radiant intensity Ie shows each value of intensity I1 and I2 in two directions. I1 I2 Note) The part number in the parenthesis shows conventional part number. 1 Infrared Light Emitting Diodes LNA2701L ∆IF — Ta tw = 10µs Ta = 25˚C Ta = 25˚C 30 20 Forward current ∆IF (mA) IFP (A) 40 Pulse forward current 10 1 10 –1 60 50 40 30 20 10 10 0 20 40 60 80 10 –2 10 –1 100 1 Ta (˚C ) (2) 10 –1 1 10 2 10 Pulse forward current VF (V) 1.2 10mA 1mA 0.8 0.4 0 – 40 10 3 IFP (mA) 0 40 80 Ambient temperature λP — Ta 120 100 10 2 10 – 25 0 20 Relative radiant intensity (%) 960 940 920 60˚ 60 100 90 80 70 60 50 40 30 20 0 40 2 80 Ta (˚C ) 120 120˚ 20 900 940 980 1020 1060 1100 Wavelength λ (nm) 60˚ 90˚ 40 0 860 100 30˚ 90˚ 20 30 Relative radiant 40 intensity (%) 50 60 70 80 90 150˚ 100 180˚ Ambient temperature 80 Ta (˚C ) 0˚ 80 150˚ 900 – 40 60 θ Direction light distribution characteristics 30˚ 980 40 Ambient temperature IF = 20mA Ta = 25˚C IF = 20mA 1.6 IF = 20mA Ta (˚C ) Spectral characteristics 1000 1.2 VF (V) 10 3 IF = 50mA Forward voltage (1) 0.8 ∆Ie — Ta VF — Ta 10 10 –2 0.4 Forward voltage 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Duty cycle (%) ∆Ie — IFP 10 2 0 10 2 10 Relative radiant intensity ∆Ie Allowable forward current ∆IF (mA) 50 Ambient temperature Relative radiant intensity ∆Ie 80 70 0 – 25 Peak emission wavelength λP (nm) ∆IF — VF∆ IFP — Duty cycle 10 2 60 120˚ Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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