Index of /ds/NP/ Name Last modified Size NPDS402.pdf 22-Dec-99 00:13 123K NPDS403.pdf 22-Dec-99 00:13 123K NPDS404.pdf 22-Dec-99 00:13 123K NPDS405.pdf 22-Dec-99 00:13 123K NPDS5565.pdf 22-Dec-99 00:13 130K NPDS5566.pdf 22-Dec-99 00:13 130K NPDS5911.pdf 22-Dec-99 00:13 121K NPDS5912.pdf 22-Dec-99 00:13 121K NPDS8301.pdf 22-Dec-99 00:13 109K NPDS8302.pdf 22-Dec-99 00:13 109K NPDS8303.pdf 22-Dec-99 00:13 109K NPN_Epitaxial_Silicon+ 16-Apr-99 13:01 73K Parent Directory Description NPDS402 NPDS403 NPDS404 NPDS406 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 50 VGS Gate-Source Voltage 50 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 1997 Fairchild Semiconductor Corporation NPDS402 / NPDS403 / NPDS404 / NPDS406 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units 25 pA OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 µA, VDS = 0 IGSS Gate Reverse Current VGS = 30 V, VDS = 0 VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 1.0 nA VGS Gate-Source Voltage VDG = 15 V, ID = 200 µA VG1 - G2 Voltage Gate 1-Gate 2 I G = 1.0 µA, VDS = 0 + / - 50 VDS = 10 V, VGS = 0 0.5 10 mA 2000 1000 7000 2000 20 µmhos µmhos µmhos - 50 - 0.5 V - 2.5 V - 2.3 V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* SMALL SIGNAL CHARACTERISTICS Common Source Forward Transconductance Common Source Output Conductance VDS = 10 V, VGS = 0, f = 1.0 kHz VDS = 15 V, ID = 200µA, f = 1.0 kHz VDS = 10 V, VGS = 0, f = 1.0 kHz VDS = 15 V, ID = 200µA, f = 1.0 kHz 2.0 µmhos Ciss Common Source Output Conductance Input Capacitance 8.0 pF Crss Reverse Transfer Capacitance 3.0 pF CMMR Common Mode Rejection VDG = 15 V, ID = 200 µA, f = 1.0 MHz VDG = 15 V, ID = 200 µA, f = 1.0 MHz VDG = 10 to 20 V, ID = 200 µA VGS1 - VGS2 Differential Match gfs goss gos ∆VGS1 - VGS2 Differential Drift *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% VDG = 10 V, ID = 200 µA, NPDS402 NPDS403 NPDS404 NPDS406 VDG = 10 V, ID = 200 µA, NPDS402 TA = -55 to 25 °C NPDS403 NPDS404 NPDS406 VDG = 10 V, ID = 200 µA NPDS402 TA = 25 to 125 °C NPDS403 NPDS404 NPDS406 95 dB 10 10 15 40 mV mV mV mV 10 25 25 80 µV/°C µV/°C µV/°C µV/°C 10 25 25 80 µV/°C µV/°C µV/°C µV/°C NPDS402 / NPDS403 / NPDS404 / NPDS406 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Parameter Interactions Transfer Characteristics Common Drain Source Common Drain-Source Transfer Characteristics Gate Leakage Current vs. Voltage NPDS402 / NPDS403 / NPDS404 / NPDS406 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Forward Transconductance vs. Drain Current Output Conductance vs. Drain Current Transconductance vs. Gate Source Voltage Transconductance vs. Gate Source Voltage Noise Voltage vs. Frequency Capacitance vs. Gate Source Voltage NPDS402 / NPDS403 / NPDS404 / NPDS406 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Differential Offset Differential Drift CMRR vs. Drain Current NPDS402 / NPDS403 / NPDS404 / NPDS406 General Purpose Dual Amplifier NPDS5565 NPDS5566 S2 D2 NC G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 40 V VDG Drain-Gate Voltage VGS Gate-Source Voltage 40 V IGF Gate Current 10 mA TJ ,T stg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor Corporation NPDS5565 / NPDS5566 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units 100 200 - 3.0 pA µA V 1.0 V OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 µA, VDS = 0 IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage VGS = 20 V, VDS = 0 VGS = 20 V, VDS = 0, TA = 150 °C VDS = 15 V, ID = 1.0 nA VGS(f) Forward Gate-Source Voltage VDS = 0, ID = 2.0 mA VG1 - G2 Voltage Gate 1 - Gate 2 VDS = 0, IG = + / - 1.0 µA - 40 - 0.5 V + / - 40 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 rDS(on) Drain-Source On Resistance I D = 1.0 mA, VGS = 0 5.0 30 mA 100 Ω 12,500 µmhos µmhos SMALL SIGNAL CHARACTERISTICS gfs Common Source Forward Transconductance goss Common Source Output Conductance VDS = 15 V, ID = 2.0mA, f = 1.0 kHz VDS = 15 V, ID = 2.0 mA, f = 100 MHz VDS = 15 V, ID = 2.0mA, f = 1.0 kHz 45 µmhos Ciss Input Capacitance VDG = 15 V, ID = 2.0mA, f = 1.0MHz 12 pF Crss Reverse Transfer Capacitance VDS = 15 V, ID = 2.0mA, f = 1.0 kHz 3.0 pF en VDG = 15 V, ID = 2.0 mA, f = 10 Hz 50 nV/√Hz NF Equivalent Short-Circuit Input Noise Voltage Noise Figure 1.0 dB IDSS1 - IDSS2 I DSS Match VDG = 15 V, ID = 2.0 mA, f = 10 Hz RG = 1.0 mΩ VDS = 15 V, VGS = 0 5.0 % gfs1 - gfs2 gfs Match VDS = 15 V, ID = 2.0mA, f = 1.0 kHz 10 % VGS1 - VGS2 Differential Match VDG = 15 V, ID = 2.0 mA, NPDS5565 NPDS5566 VDS = 10 V, VGS = 0, f = 1.0 kHz NPDS5565 TA = 25 to 125 °C NPDS5566 VDG = 15 V, ID = 2.0 mA, NPDS5565 TA = -55 to 25 °C NPDS5566 10 20 mV mV 25 50 µV/°C µV/°C 25 50 µV/°C µV/°C ∆ VGS1 - VGS2 Differential Drift 7500 7000 NPDS5565 / NPDS5566 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Parameter Interactions Common Drain-Source Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics NPDS5565 / NPDS5566 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Leakage Current vs. Voltage Output Conductance vs. Drain Current Transconductance vs. Drain Current Noise Voltage vs. Frequency Noise Voltage vs. Current Capacitance vs. Voltage NPDS5565 / NPDS5566 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Differential Drift Differential Offset CMRR vs. Drain Current NPDS5565 / NPDS5566 General Purpose Dual Amplifier NPDS5911 NPDS5912 S2 NC D2 G2 SO-8 S1 D1 G1 NC N-Channel General Purpose Dual Amplifier Sourced from Process 93. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage 25 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor Corporation NPDS5911 / NPDS5912 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 µA, VDS = 0 IGSS Gate Reverse Current VGS( off) VGS Gate-Source Cutoff Voltage VGS = 15 V, VDS = 0 VGS = 15 V, VDS = 0, TA = 150 °C VDS = 10 V, ID = 1.0 nA Gate-Source Voltage VG1 - G2 Voltage Gate 1 - Gate 2 - 25 V - 1.0 100 250 - 5.0 VDG = 10 V, ID = 5.0 mA - 0.3 - 4.0 VDS = 0, IG = + / - 1.0 µA + / - 25 pA nA V V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 10 V, VGS = 0 7.0 40 mA 5000 5000 10,000 10,000 µmhos µmhos 100 150 5.0 µmhos µmhos pF SMALL SIGNAL CHARACTERISTICS gfs Common Source Forward Transconductance goss Common Source Output Conductance Ciss Input Capacitance VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDS = 10 V, ID = 5.0 mA, f = 100 MHz VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDS = 10V, ID = 5.0mA, f = 100 MHz VDG = 10 V, ID = 5.0mA, f =1.0 MHz Crss Reverse Transfer Capacitance VDS = 10 V, ID = 5.0mA, f = 1.0 kHz 1.2 pF en VDG = 10 V, ID = 5.0 mA, f = 10 kHz 20 nV/√Hz NF Equivalent Short-Circuit Input Noise Voltage Noise Figure 1.0 dB IDSS1 -I DSS2 I DSS Match VDG = 10 V, ID = 5.0 mA, f = 10 kHz RG = 100 kΩ VDS = 10 V, VGS = 0 5.0 % gfs1 - gfs2 gfs Match VDS = 10 V, ID = 5.0mA, f = 1.0 kHz 5.0 % goss1 -goss2 goss Match VDS = 10 V, ID = 5.0mA, f = 1.0 kHz 20 µmhos IG1 - I G2 I G Match VDS = 10 V, ID = 5.0mA, TA = 125°C 20 nA VGS1 - VGS2 Differential Match VDG = 10 V, ID = 5.0 mA, NPDS5911 NPDS5912 VDG = 10 V, VGS = 0, I D = 5.0 mA, NPDS5911 TA = 25 to 125 °C NPDS5912 VDG = 10 V, ID = 5.0 mA, NPDS5911 TA = -55 to 25 °C NPDS5912 10 15 mV mV 20 40 µV/°C µV/°C 20 40 µV/°C µV/°C ∆VGS1 -VGS2 Differential Drift *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% NPDS5911 / NPDS5912 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Parameter Interactions Common Drain-Source Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics NPDS5911 / NPDS5912 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Leakage Current vs. Voltage Transconductance vs. Drain Current Capacitance vs. Voltage Output Conductance vs. Drain Current Noise Voltage vs. Frequency Differential Drift NPDS5911 / NPDS5912 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Differential Offset CMRR vs. Drain Current NPDS5911 / NPDS5912 General Purpose Dual Amplifier NPDS8301 NPDS8302 NPDS8303 S2 NC D2 G2 G1 NC SO-8 S1 D1 N-Channel General Purpose Dual Amplifier Sourced from Process 83. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage 40 V IGF Forward Gate Current 10 mA TJ , Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor Corporation NPDS8301 / NPDS8302 / NPDS8303 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage I G = 1.0 µA, VDS = 0 IGSS Gate Reverse Current VGS = 20 V, VDS = 0 VGS( off) VGS Gate-Source Cutoff Voltage VDS = 20 V, ID = 1.0 nA - 0.5 - 3.5 V Gate-Source Voltage VDS = 20 V, ID = 200 µA - 0.3 - 3.5 V VDS = 20 V, VGS = 0 0.5 6.0 mA 1000 700 4000 1200 µmhos µmhos 20 µmhos 5.0 µmhos 5.0 10 15 mV mV mV 10 15 25 µV/°C µV/°C µV/°C - 40 V 100 pA ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* SMALL SIGNAL CHARACTERISTICS gfs Common Source Forward Transconductance goss Common Source Output Conductance gos Common Source Output Conductance Differential Match VGS1 - VGS2 ∆VGS1 - VGS2 Differential Drift VDS = 20 V, VGS = 0, f = 1.0 kHz VDS = 20 V, ID = 200 µA, f = 1.0 kHz VDS = 20 V, ID = 200 µA, f = 1.0 kHz VDS = 20 V, ID = 200 µA, f = 1.0 kHz VDG = 20 V, ID = 200 µA, NPDS8301 NPDS8302 NPDS8303 VDS = 20 V, ID = 200 µA, NPDS8301 TA = 25 to 85 °C NPDS8302 NPDS8303 *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% Typical Characteristics Parameter Interactions Common Drain-Source NPDS8301 / NPDS8302 / NPDS8303 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics Channel Resistance vs. Temperature Noise Voltage vs. Frequency Transfer Characteristics Leakage Current vs. Voltage Noise Voltage vs. Current NPDS8301 / NPDS8302 / NPDS8303 General Purpose Dual Amplifier (continued) Typical Characteristics (continued) Output Conductance vs. Drain Current Transconductance vs. Drain Current Capacitance vs. Voltage Differential Offset CMRR vs. Drain Current NPDS8301 / NPDS8302 / NPDS8303 General Purpose Dual Amplifier MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I C= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : MJE800/801 : MJE802/803 Collector-Emitter Voltage : MJE800/801 : MJE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol Rating Unit 60 80 V V 60 80 5 4 0.1 40 150 -55 ~ 150 V V V A A W VCBO VCEO VEBO IC IB PC TJ T STG 1. Emitter 2. Collector 3. Base °C °C ELECTRICAL CHARACTERISTICS (TC=25°C) Characteristic Collector Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cutoff Current : MJE800/801 : MJE802/803 Collector Cutoff Current Symbol BVCEO Emitter Cutoff Current DC Current Gain : MJE800/802 : MJE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : MJE800/802 : MJE801/803 : ALL DEVICES Base-Emitter On Voltage : MJE800/802 : MJE801/803 : ALL DEVICES IEBO hFE Test Condition IC = 50mA, IB = 0 Min Max 60 80 Unit V V ICEO ICBO VCE(sat) VBE(on) 100 100 100 500 µA µA µA µA 2 mA IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA 2.5 2.8 3 V V V VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 1.2 2.5 3 V V V VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 T C = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 Rev. B.1 1999 Fairchild Semiconductor Corporation MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.