J105 J106 J107 JFTJ105 G D G G TO-92 S D SOT-223 S N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VDG Drain-Gate Voltage Parameter 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units J105 / J106 / J107 350 2.8 125 mW mW/°C °C/W 357 °C/W J105 / J106 / J107 / JFTJ105 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units - 3.0 - 200 - 10 - 6.0 - 4.5 nA nA V V V 3.0 6.0 8.0 mA mA mA Ω Ω Ω OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage I G = - 10 µA, VDS = 0 IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 nA J105 J106 J107 - 25 - 4.5 - 2.0 - 0.5 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 500 200 100 J105 J106 J107 J105 J106 J107 SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Cdg(off) Drain Gate & Source Gate On Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 160 pF Drain-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics Common Drain-Source Characteristics Common Drain-Source Characteristics 50 V 150 =0 V GS -1V -2V 100 -3V 50 -4V -5V 0 ID - DRAIN CURRENT (mA) ID - DRAIN CURRENT (mA) 200 T 0 A = + 25 C TYP V = -5V GS(OFF) V 40 0.5 1 1.5 VDS - DRAIN-SOURCE VOLTAGE(V) 2 T - 0.1V 0 A = + 25 C TYP V = -0.7V GS(OFF) 30 - 0.2V 20 - 0.3V -0.4V 10 - 0.5V 0 0 =0V GS 0 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE(V) 5 J105 / J106 J106 //J107 J107/ /NDSJ105 JFTJ105 N-Channel Switch (continued) Typical Characteristics (continued) DS I DSS 500 20 200 10 100 5 r 50 DS 2 20 20 (V C rs ( V DS = 0 V ) DS = 5V) 1 0 -5 -10 -15 V GS - GATE-SOURCE VOLTAGE (V) -20 On Resistance vs Drain Current 20 r DS - DRAIN "ON" RESISTANCE ( ) --- NORMALIZED RESISTANCE is 5 10 10 0.2 0.3 0.5 1 2 3 5 V GS - GATE CUT OFF VOLTAGE (V) C 10 Normalized Drain Resistance vs Bias Voltage V GS(OFF) @5V, 10uA 10 r DSb 5 rDS = --------------V GS 1 - ---------V GS(OFF) 1 0.5 0 0.2 0.4 0.6 0.8 1 V GS / VGS(OFF)-- NORMALIZED GATE TO SOURCE VOLTAGE (V) - TRANSCONDUCTANCE (u mhos) Output Conductance vs Drain Current V DG = 5.0V 5.0V V 20 15V 20V GS(OFF) -4.0V 10 10V 10V 15V 20V 5.0V 10V 15V 20V -2.0V 5 T A = +25 0 C -1.0V 1 0.1 fs f = 1.0 K Hz 0.2 0.3 0.5 1 2 3 I D - DRAIN CURRENT (mA) 5 10 g os - OUTPUT CONDUCTANCE (u mhos) r DSb 1,000 V @ VDS = 5.0V, ID =3nA GS(OFF) 50 f=0.1-1.0MHz @ VDS=100MV, VGS = 0 Cis (Crs) - CAPACITANCE (pf) r 100 1 0.1 g Capacitance vs Voltage 2,000 I D- DRAIN CURRENT (mA) rDS - DRAIN "ON" RESISTANCE ( Ω) Parameter Interactions 200 V V 20 GS = 0 = - 3.0V GS(OFF) 0 10 +125 C 0 +125 C 5 0 +25 C 0 +25 C 0 - 55 C V 1 1 2 = - 5.0V GS(OFF) 3 5 10 20 30 I D - DRAIN CURRENT (mA) 50 100 5 10 Transconductance vs Drain Current 0 T = - 55 C A T A= +25 0 C 0 TA = +125 C V DG = 10.0V T A = +25 0 C f = 1.0 k Hz 20 10 V = - 1.0V GS(OFF) 5 V = - 3.0V GS(OFF) V = - 5.0V GS(OFF) 1 0.1 0.2 0.3 0.5 1 2 3 I D - DRAIN CURRENT (mA) J105 / J106 / J107 / JFTJ105 N-Channel Switch (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature en - NOISE VOLTAGE (nV/ PD - POWER DISSIPATION (mW) 20 V DG = 10 V Hz ) Noise Voltage vs Frequency 15 BW = 6.0 Hz @ f = 10Hz, 100 Hz = 0.2f @ f > 1.0 k Hz 10 I = 1 mA D 5 ID = 10 mA 0 0.01 0.03 0.1 0.3 1 3 10 f - FREQUENCY (k Hz) 30 100 350 300 TO-92 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 J105 / J106 / J107 / JFTJ105 N-Channel Switch