MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Equivalent Circuit VCBO Parameter Collector- Base Voltage : MJE800/801 : MJE802/803 Value 60 80 Units V V VCEO Collector-Emitter Voltage : MJE800/801 : MJE802/803 60 80 V V VEBO Emitter-Base Voltage 5 IC Collector Current 4 V A IB Base Current 0.1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C C B R1 R2 R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICEO Parameter Collector-Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cut-off Current : MJE800/801 : MJE802/803 ICBO Collector Cut-off Current Test Condition IC = 50mA, IB = 0 Min. Max. 60 80 Units V V VCE = 60V, IB = 0 VCE = 80V, IB = 0 100 100 µA µA VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C 100 500 µA µA 2 mA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE DC Current Gain VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A VCE(sat) Collector-Emitter Saturation Voltage : MJE800/802 : MJE801/803 : ALL DEVICES IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA 2.5 2.8 3 V V V Base-Emitter ON Voltage : MJE800/802 : MJE801/803 : ALL DEVICES VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 2.5 2.5 3 V V V VBE(on) ©2001 Fairchild Semiconductor Corporation : MJE800/802 : MJE801/803 : ALL DEVICES 750 750 100 Rev. A1, February 2001 MJE800/801/802/803 Typical Characteristics 5 10000 IB= 450µA IB= 400µ A 4 VCE = 3V IB= 300µA IB= 250µA IB= 200µA IB= 350µ A 3 hFE, DC CURRENT GAIN IC(A),COLLECTOR CURRENT A IB= 500µ IB= 150µ A IB= 100µA 2 IB= 50µA 1 0 1 2 3 4 100 10 0.01 5 0.1 1 10 V CE(V),COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 1000 100 IC = 500 IB f=0.1MHZ IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0 1000 10 VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 1 100 10 1 0.01 10 IC[A], COLLECTOR CURRENT 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 60 100 PC[W], POWER DISSIPATION 10 10 0µ s 1m s 5m s D .C . IC[A], COLLECTOR CURRENT 50 1 MJE800/801 40 30 20 10 MJE802/803 0.1 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, February 2001 MJE800/801/802/803 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ LILENT SWITCHER® SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ VCX™ UHC™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. G