NTGS3433T1 Product Preview MOSFET -3.3 Amps, -12 Volts P–Channel TSOP–6 Features http://onsemi.com • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package –3.3 AMPERES –12 VOLTS 75 m @ VGS = –4.5 V Applications • Power Management in Portable and Battery–Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards P–Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Thermal Resistance Junction–to–Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (Tp 10 µS) Maximum Operating Power Dissipation Maximum Operating Drain Current Thermal Resistance Junction–to–Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (Tp 10 µS) Maximum Operating Power Dissipation Maximum Operating Drain Current Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds 1 2 5 6 Symbol Value Unit VDSS VGS –12 Volts 8.0 Volts 62.5 2.0 –3.3 °C/W Watts Amps ID IDM Pd ID –20 1.0 –2.35 Amps Watts Amps RθJA Pd 128 1.0 °C/W Watts ID IDM Pd ID TJ, Tstg –2.35 –14 0.5 –1.65 Amps Amps Watts Amps –55 to 150 °C 260 °C RθJA Pd TL DRAIN 3 GATE 4 SOURCE MARKING DIAGRAM 3 4 5 2 1 433 x TSOP–6 CASE 318G STYLE 1 6 x = Date Code PIN ASSIGNMENT 1. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), t 5.0 seconds. 2. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), operating to steady state. Drain Drain Source 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3433T1 Package Shipping TSOP–6 3000 Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev. 0 1 Publication Order Number: NTGS3433T1/D NTGS3433T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)* Characteristic Symbol Min Typ Max –12 – – – – – – –1.0 –5.0 – – –100 – – 100 –0.50 –0.70 –1.50 – – 0.055 0.075 0.075 0.095 – 7.0 – Qtot – 7.0 15 Qgs – 2.0 – Qgd – 3.5 – Ciss – 550 – Coss – 450 – Crss – 200 – td(on) – 20 30 Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = –10 µA) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = –8 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = –8 Vdc, TJ = 70°C) IDSS Gate–Body Leakage Current (VGS = –8.0 Vdc, VDS = 0 Vdc) IGSS Gate–Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) IGSS Vdc µAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = –250 µAdc) VGS(th) Static Drain–Source On–State Resistance (VGS = –4.5 Vdc, ID = –3.3 Adc) (VGS = –2.5 Vdc, ID = –2.9 Adc) RDS(on) Forward Transconductance (VDS = –10 Vdc, ID = –3.3 Adc) Vdc gFS mhos DYNAMIC CHARACTERISTICS Total Gate Charge Gate–Source Charge (VDS = –10 10 Vdc, Vd VGS = –4.5 4 5 Vdc, Vd ID = –3.3 Adc) Gate–Drain Charge Input Capacitance Output Capacitance (VDS = –5.0 5 0 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Reverse Transfer Capacitance nC pF SWITCHING CHARACTERISTICS Turn–On Delay Time Rise Time ns (VDD = –10 10 Vdc, ID = –1.0 1.0 Adc, VGS = –4.5 Vdc, Rg = 6.0 ) tr – 20 30 td(off) – 110 120 tf – 100 115 (IS = –1.7 Adc, dlS/dt = 100 A/µs) trr – 30 – ns (IS = –1.7 Adc, VGS = 0 Vdc) VSD – –0.80 –1.5 Vdc Diode Forward On–Voltage (IS = –3.3 Adc, VGS = 0 Vdc) VSD – *Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%. *Class 1 ESD rated – Handling precautions to protect against electrostatic discharge is mandatory. –0.90 – Vdc Turn–Off Delay Time Fall Time Reverse Recovery Time BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage http://onsemi.com 2 NTGS3433T1 20 VGS = –2.5 V VGS = –5 V 10 –ID, DRAIN CURRENT (AMPS) –ID, DRAIN CURRENT (AMPS) 12 VGS = –3 V VGS = –3.5 V VGS = –4 V VGS = –4.5 V 8 6 VGS = –2 V 4 TJ = 25°C 2 VGS = –1.5 V 0 0.25 0.5 0.75 1.25 1 1.5 TJ = 25°C 12 10 TJ = 125°C 8 6 4 2 2 2.5 3 RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) Figure 2. Transfer Characteristics 0.3 0.25 0.2 0.15 0.1 0.05 0 2 4 6 8 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 4 3.5 Figure 1. On–Region Characteristics 0.35 0.3 TJ = 25°C 0.25 0.2 VGS = –2.5 V 0.15 0.1 VGS = –4.5 V 0.05 0 0 2 4 6 8 10 12 14 16 20 18 –ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance vs. Gate–to–Source Voltage Figure 4. On–Resistance vs. Drain Current and Gate Voltage 1200 1.6 ID = –3.3 A VGS = –4.5 V 1 0.8 800 600 Ciss 400 Coss 200 Crss 0 –25 0 VGS = 0 V TJ = 25°C 1000 1.2 0.6 –50 1.5 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) ID = –3.3 A TJ = 25°C 1.4 1 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.4 0 TJ = –55°C 16 14 0 0.5 1.75 C, CAPACITANCE (pF) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) 0 VDS ≥ –10 V 18 25 50 75 100 125 150 0 2.5 5 7.5 10 12.5 15 17.5 TJ, JUNCTION TEMPERATURE (°C) –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 6 10 5 –IS, SOURCE CURRENT (AMPS) –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) NTGS3433T1 QT 4 3 Qgs Qgd 2 TJ = 25°C ID = –3.3 A 1 0 0 2 4 8 6 8 7 TJ = 150°C 6 5 4 TJ = 25°C 3 2 1 0 10 VGS = 0 V 9 0 0.4 0.6 0.8 1 1.2 –VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Gate–to–Source and Drain–to–Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.1 1E–04 Single Pulse 1E–03 1E–02 1E–01 1E+00 1E+01 SQUARE WAVE PULSE DURATION (sec) Figure 9. Normalized Thermal Transient Impedance, Junction–to–Ambient 20 16 POWER (W) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.2 12 8 4 0 0.01 0.10 1.00 10.00 TIME (sec) Figure 10. Single Pulse Power http://onsemi.com 4 100.00 1E+02 1E+03 NTGS3433T1 PACKAGE DIMENSIONS TSOP–6 CASE 318G–02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 STYLE 1: PIN 1. 2. 3. 4. 5. 6. http://onsemi.com 5 DRAIN DRAIN GATE SOURCE DRAIN DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NTGS3433T1 Notes http://onsemi.com 6 NTGS3433T1 Notes http://onsemi.com 7 NTGS3433T1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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