ONSEMI NTTD1P02R2

NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8 Package
Features
•
•
•
•
•
•
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Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual Micro8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
−1.45 AMPERES
−20 VOLTS
160 m @ VGS = −4.5
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Dual P−Channel
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage − Continuous
VGS
8.0
V
G
S
Thermal Resistance −
Junction−to−Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
RθJA
PD
ID
ID
IDM
250
0.50
−1.45
−1.15
−10
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
RθJA
PD
ID
ID
IDM
125
1.0
−2.04
−1.64
−16
°C/W
W
A
A
A
Micro8
CASE 846A
STYLE 2
TJ, Tstg
−55 to
+150
°C
MARKING DIAGRAM
& PIN ASSIGNMENT
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −4.5 Vdc,
Peak IL = −3.5 Apk, L = 5.6 mH,
RG = 25 Ω)
EAS
35
mJ
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
Operating and Storage
Temperature Range
8
1
Source 1
Gate 1
Source 2
Gate 2
°C
260
1
8
2 YWW 7
3
6
BC
4
5
Drain 1
Drain 1
Drain 2
Drain 2
(Top View)
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
Y
= Year
WW = Work Week
BC = Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTTD1P02R2
Micro8
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 1
1
Publication Order Number:
NTTD1P02R2/D
NTTD1P02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4.)
Symbol
Characteristic
Min
Typ
Max
Unit
−20
−
−
−12
−
−
−
−
−
−
−1.0
−10
−
−
−100
−
−
100
−0.7
−
−0.95
2.3
−1.4
−
−
−
−
0.130
0.175
0.190
0.160
0.250
−
gFS
−
2.5
−
Mhos
Ciss
−
265
−
pF
Coss
−
100
−
Crss
−
60
−
td(on)
−
10
−
tr
−
25
−
td(off)
−
30
−
tf
−
25
−
td(on)
−
10
−
tr
−
20
−
td(off)
−
30
−
tf
−
20
−
Qtot
−
5.0
10
Qgs
−
1.5
−
Qgd
−
2.0
−
VSD
−
−
−0.91
−0.72
−1.1
−
Vdc
trr
−
25
−
ns
ta
−
13
−
tb
−
12
−
QRR
−
0.015
−
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current
(VGS = −8 Vdc, VDS = 0 Vdc)
IGSS
Gate−Body Leakage Current
(VGS = +8 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −1.45 Adc)
(VGS = −2.7 Vdc, ID = −0.7 Adc)
(VGS = −2.5 Vdc, ID = −0.7 Adc)
RDS(on)
Forward Transconductance (VDS = −10 Vdc, ID = −0.7 Adc)
Vdc
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −16
16 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Notes 5. & 6.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −16
16 Vdc, ID = −1.45
1.45 Adc,
VGS = −4.5 Vdc, RG = 6.0 Ω)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −16
16 Vdc, ID = −0.7
0.7 Adc,
VGS = −4.5 Vdc, RG = 6.0 Ω)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −16 Vdc,
VGS = −4.5 Vdc,
ID = −1.45
1 45 Adc)
Ad )
ns
ns
nC
BODY−DRAIN DIODE RATINGS (Note 5.)
Diode Forward On−Voltage
(IS = −1.45 Adc, VGS = 0 Vdc)
(IS = −1.45 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = −1.45
1 45 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
4. Handling precautions to protect against electrostatic discharge is mandatory.
5. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
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2
µC
NTTD1P02R2
3
−2.5 V
−2.3 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
3 −2.7 V
−2.9 V
−3.1 V
−3.3 V
−3.7 V
−4.5 V
2
TJ = 25°C
−2.1 V
−8 V
−1.9 V
1
−1.7 V
VGS = −1.5 V
0
0.25
0.5
0.75
1
1.25
1.5
TJ = −55°C
1
1.75
TJ = 100°C
TJ = 25°C
1
2
1.5
2.5
3
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = −1.45 A
TJ = 25°C
0.3
0.2
0.1
0
2
4
6
8
10
12
3.5
0.3
TJ = 25°C
VGS = −2.5 V
0.2
VGS = −2.7 V
VGS = −4.5 V
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
100
VGS = 0 V
ID = −1.45 A
VGS = −4.5 V
−IDSS, LEAKAGE (nA)
1.4
0.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.4
0
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
2
0
0
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS ≥ −10 V
1.2
1
TJ = 125°C
TJ = 100°C
10
0.8
0.6
−50
1
−25
0
25
75
50
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
4
Figure 5. On−Resistance Variation with
Temperature
8
12
16
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
VDS = 0 V
Ciss
VGS = 0 V
C, CAPACITANCE (pF)
TJ = 25°C
600
Crss
400
Ciss
200
Coss
Crss
0
5
10
0
−VGS −VDS
5
10
15
20
5
20
QT
18
16
4
14
−VGS
3
Q1
12
10
Q2
8
2
6
1
ID = −1.45 A
TJ = 25°C
−VDS
4
2
0
0
0
1
2
3
4
5
6
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
800
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTTD1P02R2
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
VDD = −16 V
ID = −1.45 A
VGS = −4.5 V
tr
td (off)
tf
10
td (on)
1.2
0.8
0.4
0
1
10
1
100
ID , DRAIN CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
1.6
100
0.4
0.5
0.6
0.7
0.8
1
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
VGS = 8 V
SINGLE PULSE
TC = 25°C
di/dt
IS
10
100 s
trr
1 ms
ta
1
tb
TIME
10 ms
0.25 IS
tp
0.1
0.01
0.9
RG, GATE RESISTANCE (OHMS)
IS
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
dc
10
100
Figure 12. Diode Reverse Recovery Waveform
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTD1P02R2
TYPICAL ELECTRICAL CHARACTERISTICS
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
1000
100
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
0.1
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
Figure 13. Thermal Response
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5
1.0E+01
1.0E+02
1.0E+03
NTTD1P02R2
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
−A−
−B−
K
PIN 1 ID
G
D 8 PL
0.08 (0.003)
M
T B
S
A
DIM
A
B
C
D
G
H
J
K
L
S
SEATING
−T− PLANE
0.038 (0.0015)
C
L
J
H
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
−−−
1.10
0.25
0.40
0.65 BSC
0.05
0.15
0.13
0.23
4.75
5.05
0.40
0.70
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
−−−
0.043
0.010
0.016
0.026 BSC
0.002
0.006
0.005
0.009
0.187
0.199
0.016
0.028
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
SOLDERING FOOTPRINT*
8X
1.04
0.041
0.38
0.015
3.20
0.126
6X
8X
4.24
0.167
0.65
0.0256
5.28
0.208
SCALE 8:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Micro8 is a trademark of International Rectifier.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your
local Sales Representative.
NTTD1P02R2/D