PN2222, PN2222A PN2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage PN2222 PN2222A VCEO 30 40 Vdc Collector-Base Voltage PN2222 PN2222A VCBO 60 75 Vdc Emitter-Base Voltage PN2222 PN2222A VEBO 5.0 6.0 Vdc 600 mAdc 625 5.0 mW mW/°C 1.5 12 Watts mW/°C –55 to +150 °C Collector Current – Continuous IC Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction-to-Ambient RθJA 200 °C/W Thermal Resistance Junction-to-Case RθJC 83.3 °C/W COLLECTOR 3 2 BASE 1 EMITTER MARKING DIAGRAM 1 2 PN 222x YWW 3 TO–92 CASE 29 STYLE 1 PN222x= Device Code x = 2 or A Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping PN2222 TO–92 5000 Units/Box PN2222A TO–92 5000 Units/Box PN2222ARLRA TO–92 2000/Tape & Reel PN2222ARLRM TO–92 2000/Ammo Pack PN2222ARLRP TO–92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 0 1 Publication Order Number: PN2222/D PN2222, PN2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) PN2222 PN2222A V(BR)CEO 30 40 – – Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) PN2222 PN2222A V(BR)CBO 60 75 – – Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) PN2222 PN2222A V(BR)EBO 5.0 6.0 – – Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX – 10 nAdc PN2222A Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 50 Vdc, IE = 0, TA = 125°C) PN2222 PN2222A PN2222 PN2222A – – – – 0.01 0.01 10 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO – 100 nAdc PN2222A Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBL – 20 nAdc PN2222A 35 50 75 35 100 50 30 40 – – – – 300 – – – PN2222 PN2222A – – 0.4 0.3 PN2222 PN2222A – – 1.6 1.0 PN2222 PN2222A – 0.6 1.3 1.2 PN2222 PN2222A – – 2.6 2.0 µAdc ICBO ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) hFE PN2222A only PN2222 PN2222A Collector–Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) – VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 Vdc PN2222, PN2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 250 300 – – – 8.0 – – 30 25 2.0 0.25 8.0 1.25 – – 8.0 4.0 50 75 300 375 5.0 25 35 200 rb′Cc – 150 ps NF – 4.0 dB (VCC = 30 Vdc, VBE(off) = –0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td – 10 ns tr – 25 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) ts – 225 ns tf – 60 ns Characteristic Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT PN2222 PN2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PN2222A PN2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) PN2222A Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) PN2222A Delay Time Rise Time Storage Time Fall Time pF Cibo PN2222 PN2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS MHz pF hie kΩ X 10–4 hre hfe – mhos hoe PN2222A only 2. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% +16 V 0 -2 V 200 +16 V 0 < 2 ns 1 kΩ CS* < 10 pF -14 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% < 20 ns 1k 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time http://onsemi.com 3 200 CS* < 10 pF PN2222, PN2222A hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 100 70 50 300 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25°C 20 10 7.0 5.0 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 200 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 Figure 5. Turn–On Time 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time http://onsemi.com 4 300 500 PN2222, PN2222A IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 8.0 6.0 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 4.0 2.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 Ccb 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 5.0 3.0 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current–Gain Bandwidth Product 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ °C) 0.8 V, VOLTAGE (VOLTS) 50 k 100 k Figure 8. Source Resistance Effects 7.0 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 5.0 k 10 k 20 k Figure 7. Frequency Effects 10 0 500 1.0 k 2.0 k RS, SOURCE RESISTANCE (OHMS) Ceb 0.2 0.3 100 200 f, FREQUENCY (kHz) 20 2.0 0.1 0 50 50 100 20 30 CAPACITANCE (pF) IC = 50 µA 100 µA 500 µA 1.0 mA 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) -2.5 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 500 PN2222, PN2222A PACKAGE DIMENSIONS TO–92 TO–226AA CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- PN2222, PN2222A Notes http://onsemi.com 7 PN2222, PN2222A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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