BC447, BC449, BC449A High Voltage Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage BC447 BC449, BC449A VCEO Collector-Base Voltage BC447 BC449, BC449A VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current – Continuous IC 300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C –55 to +150 °C Operating and Storage Junction Temperature Range COLLECTOR 1 Unit Vdc 80 100 2 BASE Vdc 80 100 TJ, Tstg Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) 3 EMITTER 1 2 3 CASE 29 TO–92 STYLE 17 MSL: 1 NA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W MARKING DIAGRAM BC 44xx YWW BC44xx xx Y WW = Specific Device Code = 7, 9 or 9A = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 0 1 Package Shipping BC447 TO–92 5000 Units/Box BC449 TO–92 5000 Units/Box BC449A TO–92 5000 Units/Box Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 80 100 – – – – 80 100 – – – – 5.0 – – – – – – 100 100 50 120 50 100 50 60 – – – – – – 460 220 – – – – – 0.125 0.25 – 0.85 – 0.55 – – 0.76 0.7 1.2 100 200 – Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CEO BC447 BC449, BC449A V(BR)CBO BC447 BC449, BC449A Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc Vdc V(BR)EBO Vdc ICBO BC447 BC449, BC449A nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE BC447, BC449 BC449A BC447, BC449 BC449A BC447, BC449 BC449A Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) Base–Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1) VBE(on) – Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle 2% http://onsemi.com 2 MHz 300 40 200 -5.0 V Cibo C, CAPACITANCE (pF) 100 70 10 8.0 6.0 50 30 -1.0 -5.0 -7.0 -10 -2.0 -3.0 2.0 -0.1 -0.2 -50 -70 -100 -20 -30 -0.5 -1.0 -2.0 -5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Current–Gain — Bandwidth Product Figure 2. Capacitance VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 200 -1.0 k -700 -500 -300 -200 tf 100 70 50 -100 -70 -50 tr 30 20 td @ VBE(off) = -0.5 V -10 -20 -30 -50 -70 -100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE ≤ 10% MPS8599 -30 -20 -10 -200 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Switching Times Figure 4. Active–Region Safe Operating Area 300 1.0 TJ = 125°C 200 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 25°C 100 70 -50 -100 -10 -20 IC, COLLECTOR CURRENT (mA) 300 h FE, DC CURRENT GAIN Cobo 4.0 1.0 k 700 500 t, TIME (ns) 20 VCE = -1.0 V 10 25°C TTJJ==25°C TJ = 25°C I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) BC447, BC449, BC449A -55°C VCE = -5.0 V 50 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 30 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 0 0.2 -50 -100 -200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain Figure 6. “ON” Voltages http://onsemi.com 3 50 100 200 IC = 10 mA 1.6 IC = 50 mA IC = 20 mA IC = 100 mA R VB , TEMPERATURE COEFFICIENT (mV/ °C) 2.0 IC = 200 mA 1.2 0.8 0.4 TJ = 25°C 0 0.02 0.05 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC447, BC449, BC449A 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 1.0 0.5 2.0 10 5.0 20 -1.4 -1.8 RVB FOR VBE -55°C TO 125°C -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base–Emitter Temperature Coefficient 200 D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) P(pk) 0.01 t1 SINGLE PULSE 0.03 t2 0.02 0.01 -1.0 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 9. Thermal Response http://onsemi.com 4 2.0 k 5.0 k 10 k 20 k 50 k 100 k BC447, BC449, BC449A PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 5 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BC447, BC449, BC449A Notes http://onsemi.com 6 BC447, BC449, BC449A Notes http://onsemi.com 7 BC447, BC449, BC449A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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