ON Semiconductor High Current Transistors BC489, A, B NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic 3 COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO 80 — — Vdc Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 80 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 — — Vdc ICBO — — 100 nAdc 40 60 100 160 15 — — 160 260 — — 400 250 400 — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B (IC = 1.0 Adc, VCE = 5.0 Vdc)* — 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1 1 Publication Order Number: BC489/D BC489, A, B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max — — 0.2 0.3 0.5 — — — 0.85 0.9 1.2 — fT — 200 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 — pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 50 — pF Characteristic Unit ON CHARACTERISTICS* (Continued) Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TURN-ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 µF +VBB VCC +40 V -1.0 V 5.0 µs TURN-OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 µF *CS < 6.0 pF 5.0 µs tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 100 RL OUTPUT *CS < 6.0 pF 300 80 VCE = 2.0 V TJ = 25°C 200 TJ = 25°C 60 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) BC489, A, B 100 70 50 40 Cibo 20 10 8.0 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 4.0 0.1 200 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current–Gain — Bandwidth Product 50 100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 30 20 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 0.1 0.07 0.05 P(pk) 0.01 t1 0.02 SINGLE PULSE 0.03 SINGLE PULSE ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) 1.0k Figure 5. Thermal Response http://onsemi.com 3 2.0k t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZθJC(t) TJ(pk) – TA = P(pk) ZθJA(t) 5.0k 10k 20k 50k 100k IC, COLLECTOR CURRENT (mA) BC489, A, B 1.0 k 700 500 100 µs 1.0 ms 1.0 s 300 200 TC = 25°C TA = 25°C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region — Safe Operating Area 400 hFE , DC CURRENT GAIN TJ =125°C VCE = 1.0 V 200 25°C -55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25°C 0.8 0.6 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 0 0.05 Figure 8. “On” Voltages 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 9. Collector Saturation Region http://onsemi.com 4 50 BC489, A, B -1.0 -1.2 -0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) -0.8 V, VOLTAGE (VOLTS) TJ = 25°C -1.6 RθVB for VBE -2.0 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 -2.4 VCE(sat) @ IC/IB = 10 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 0 -0.5 500 -1.0 -2.0 -1.0 -0.8 TJ = 25°C -1.2 -0.8 -1.6 -0.6 -0.4 -500 Figure 11. “On” Voltages RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Base–Emitter Temperature Coefficient -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC = -10 mA -50 mA -100 mA RθVB for VBE -2.0 -250 mA -500 mA -2.4 -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 -2.8 -0.5 -50 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 Figure 13. Base–Emitter Temperature Coefficient Figure 12. Collector Saturation Region http://onsemi.com 5 BC489, A, B PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X D G H J R 1 2 3 N N C SECTION X–X STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 6 DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- BC489, A, B Notes http://onsemi.com 7 BC489, A, B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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