ETC PNZ322D(PN322D)

PIN Photodiodes
PNZ322D (PN322D)
Dual Division Silicon PIN Photodiode
Unit : mm
For optical information systems
1.8±0.3
0.8±0.2
0.6±0.1
5.0±0.1
2.54±0.1
4
3
1.0±0.1
Features
Fast response : tr, tf = 10 ns (typ.)
Small plastic package and visible light cutoff resin (flat type)
A B
5˚
Low dark current : ID = 10 nA (max.)
13.5±1.0
4.0±0.1
1.0±0.3
1.0±0.3
5˚
Good photo current linearity
1.0±0.1
4-0.6 +0.1
–0.2
Applications
4-0.5±0.15
1
10˚
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
10˚
5˚
5˚
Position sensor for automatic assembly lines
Eye sensor for industrial robots
Symbol
Ratings
Unit
VR
30
V
Power dissipation
PD
30
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
Dimensions of detection area
1.9
0.55
1.26
1.0
Reverse voltage (DC)
1: Anode A
2: Common cathode
3: Anode B
4: Common cathode
Note) The PNZ0322 package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
0.2 +0.1
–0.05
2
A
Unit : mm
0.55
0.04
B
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
10
nA
Reverse voltage (DC)
VR
IR = 10µA
Dark current
ID
VR = 10V
Photo current
IL*3
VR = 10V, L = 1000 lx*1
5
µA
Peak sensitivity wavelength
λP
VR = 10V
940
nm
Response time
tr, tf
*2
30
3
V
VR = 10V, RL = 1kΩ
10
ns
Capacitance between pins
Ct
VR = 10V, f = 1MHz
3
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
65
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics
are the values corresponding to individual elements.
*1 White tungsten lamp light source (color temperature T = 2856K)
*2 Semiconductor laser light source (λ = 800nm)
*3 Photo current measurement circuit
+10V
R1 = R2
R2
;;
;;;
R1
Note) The part number in the parenthesis shows conventional part number.
1
PNZ322D
PIN Photodiodes
PD — Ta
IL — L
20
10
VR = 10V
Ta = 25˚C
T = 2856K
VR = 10V
L = 1000 lx
T = 2856K
140
10
Relative photo current
IL (µA)
Photo current
PD (mW)
Power dissipation
30
IL — Ta
160
IL (%)
10 2
40
1
10 –1
120
100
80
60
40
20
0
– 30
0
20
40
60
Ambient temperature
80
10 –2
10
100
10 2
Ta (˚C )
10 –1
10 –2
20
40
60
80
100
Ta (˚C )
Spectral sensitivity characteristics
100
VR = 10V
10 –1
Relative sensitivity
ID (nA)
Ta = 25˚C
0
Ambient temperature
S (%)
1
Dark current
ID (nA)
Dark current
0
– 40 – 20
10 4
L (lx)
ID — Ta
ID — V R
1
10 3
Illuminance
10 –2
VR = 10V
Ta = 25˚C
80
60
40
20
4
8
12
16
Reverse voltage
20
24
28
10 –3
– 40 – 20
32
VR (V)
60
60
40
20
80
40
0
40
Angle θ (deg.)
80
0
600
100
700
900
10 4
f = 1MHz
Ta = 25˚C
Sig.IN
1
10 –1
1
Reverse voltage
1000 1100 1200
tr , tf — RL
10
10 –2
10 –1
800
Wavelength λ (nm)
VR = 10V
Sig.
OUT
RL
;;
;
Ct (pF)
80
80
Ta (˚C )
10 2
Capacitance between pins
S (%)
Relative sensitivity
40
Ct — VR
Directivity characteristics
2
20
Ambient temperature
100
0
0
tr , tf (ns)
0
Rise time, Fall time
10 –3
10
VR (V)
10 2
10 3
50Ω
tr
90%
10%
td
tf
10 2
10
1
10 –1
Ta = 25˚C
1
10
External load resistance
10 2
RL (kΩ)
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2001 MAR