PIN Photodiodes PNZ322D (PN322D) Dual Division Silicon PIN Photodiode Unit : mm For optical information systems 1.8±0.3 0.8±0.2 0.6±0.1 5.0±0.1 2.54±0.1 4 3 1.0±0.1 Features Fast response : tr, tf = 10 ns (typ.) Small plastic package and visible light cutoff resin (flat type) A B 5˚ Low dark current : ID = 10 nA (max.) 13.5±1.0 4.0±0.1 1.0±0.3 1.0±0.3 5˚ Good photo current linearity 1.0±0.1 4-0.6 +0.1 –0.2 Applications 4-0.5±0.15 1 10˚ Auto focus sensor for still cameras and video cameras etc. Distance measuring systems 10˚ 5˚ 5˚ Position sensor for automatic assembly lines Eye sensor for industrial robots Symbol Ratings Unit VR 30 V Power dissipation PD 30 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Dimensions of detection area 1.9 0.55 1.26 1.0 Reverse voltage (DC) 1: Anode A 2: Common cathode 3: Anode B 4: Common cathode Note) The PNZ0322 package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Absolute Maximum Ratings (Ta = 25˚C) Parameter 0.2 +0.1 –0.05 2 A Unit : mm 0.55 0.04 B Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit 10 nA Reverse voltage (DC) VR IR = 10µA Dark current ID VR = 10V Photo current IL*3 VR = 10V, L = 1000 lx*1 5 µA Peak sensitivity wavelength λP VR = 10V 940 nm Response time tr, tf *2 30 3 V VR = 10V, RL = 1kΩ 10 ns Capacitance between pins Ct VR = 10V, f = 1MHz 3 pF Acceptance half angle θ Measured from the optical axis to the half power point 65 deg. Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values corresponding to individual elements. *1 White tungsten lamp light source (color temperature T = 2856K) *2 Semiconductor laser light source (λ = 800nm) *3 Photo current measurement circuit +10V R1 = R2 R2 ;; ;;; R1 Note) The part number in the parenthesis shows conventional part number. 1 PNZ322D PIN Photodiodes PD — Ta IL — L 20 10 VR = 10V Ta = 25˚C T = 2856K VR = 10V L = 1000 lx T = 2856K 140 10 Relative photo current IL (µA) Photo current PD (mW) Power dissipation 30 IL — Ta 160 IL (%) 10 2 40 1 10 –1 120 100 80 60 40 20 0 – 30 0 20 40 60 Ambient temperature 80 10 –2 10 100 10 2 Ta (˚C ) 10 –1 10 –2 20 40 60 80 100 Ta (˚C ) Spectral sensitivity characteristics 100 VR = 10V 10 –1 Relative sensitivity ID (nA) Ta = 25˚C 0 Ambient temperature S (%) 1 Dark current ID (nA) Dark current 0 – 40 – 20 10 4 L (lx) ID — Ta ID — V R 1 10 3 Illuminance 10 –2 VR = 10V Ta = 25˚C 80 60 40 20 4 8 12 16 Reverse voltage 20 24 28 10 –3 – 40 – 20 32 VR (V) 60 60 40 20 80 40 0 40 Angle θ (deg.) 80 0 600 100 700 900 10 4 f = 1MHz Ta = 25˚C Sig.IN 1 10 –1 1 Reverse voltage 1000 1100 1200 tr , tf — RL 10 10 –2 10 –1 800 Wavelength λ (nm) VR = 10V Sig. OUT RL ;; ; Ct (pF) 80 80 Ta (˚C ) 10 2 Capacitance between pins S (%) Relative sensitivity 40 Ct — VR Directivity characteristics 2 20 Ambient temperature 100 0 0 tr , tf (ns) 0 Rise time, Fall time 10 –3 10 VR (V) 10 2 10 3 50Ω tr 90% 10% td tf 10 2 10 1 10 –1 Ta = 25˚C 1 10 External load resistance 10 2 RL (kΩ) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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