Phototransistors PNZ121S (PN121S) Silicon NPN Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 10 mA Collector current 2 1 1: Emitter 2: Collector Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle ICE(L) *3 Conditions min VCE = 10V VCE = 10V, L = 1000 lx*1 typ max Unit 1 100 nA 280 µA 120 λP VCE = 10V 800 nm θ Measured from the optical axis to the half power point 30 deg. 1 µs 1.3 µs Rise time tr*2 Fall time tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100Ω *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω *3 I CE(L) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S T ICE(L) (µA) 120 to180 160 to 200 180 to 235 210 to 280 Black Red Green — Color indication Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ121S PC — Ta ICE(L) — VCE ICE(L) — L 10 4 600 VCE = 10V Ta = 25˚C T = 2856K 40 30 20 10 ICE(L) (µA) 50 500 L =2000 lx 400 1750 lx 300 Collector photo current ICE(L) (µA) Ta = 25˚C T = 2856K Collector photo current Collector power dissipation PC (mW) 60 1500 lx 1250 lx 200 1000 lx 750 lx 100 500 lx 10 3 10 2 10 250 lx 40 60 80 100 Ta (˚C ) 0 4 ICEO — Ta VCE = 10V 0 20 20 40 Ambient temperature 60 80 1000 lx 10 2 50 40 30 20 40 60 80 60 40 80 0 200 100 30˚ 40˚ 50˚ 60˚ 70˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) 10 2 VCC = 10V Ta = 25˚C 10 VCC = 10V Ta = 25˚C 10 tr (µs) 60 VCE = 10V Ta = 25˚C tr — ICE(L) Rise time 70 Relative sensitivity S (%) 90 20 10 2 100 80 0 Ambient temperature 20˚ 10 4 20 Ta (˚C ) 10˚ 10 3 L (lx) Spectral sensitivity characteristics 100 L = 1500 lx 10 – 20 100 10 2 Illuminance VCE = 10V T = 2856K Directivity characteristics 0˚ 1 10 24 VCE (V) Relative sensitivity 1 10 –1 – 20 16 ICE(L) — Ta ICE(L) (µA) 10 12 10 3 Collector photo current ICEO (nA) 10 2 Dark current 10 3 8 Collector to emitter voltage S (%) 20 tf (µs) 0 Ambient temperature 0 RL = 1kΩ 1 500Ω 100Ω 10 –1 Fall time 0 – 20 RL = 1kΩ 1 500Ω 100Ω 10 –1 80˚ 90˚ 10 –2 10 –2 10 –1 Collector photo current 2 1 10 ICE(L) (mA) 10 –2 10 –2 10 –1 Collector photo current 1 10 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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