ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C High Current Gain — Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO–220 AB Package 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BD241C BD242C Unit Collector–Emitter Voltage VCEO 100 Vdc Collector–Emitter Voltage VCES 115 Vdc VEB 5.0 Vdc Collector Current — Continuous Peak IC 3.0 5.0 Adc Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 40 0.32 Watts W/C TJ, Tstg –65 to +150 C Rating Emitter–Base Voltage Operating and Storage Junction Temperature Range CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 C/W Thermal Resistance, Junction to Case RθJC 3.125 C/W Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 3 1 Publication Order Number: BD241C/D BD241C BD242C PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 BD241C BD242C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min. Max. Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage1 (IC = 30 mAdc, IB = 0) BD241C, BD242C Collector Cutoff Current (VCE = 60 Vdc, IB = 0) BD241C, BD242C Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) BD241C, BD242C VCEO Vdc 100 ICEO 0.3 mAdc µAdc ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) 200 IEBO mAdc 1.0 ON CHARACTERISTICS1 DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 600 Adc) VCE(sat) Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) Vdc 1.2 Vdc 1.8 DYNAMIC CHARACTERISTICS Current Gain – Bandwidth Product2 (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe MHz 3.0 20 1 Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 2 fT = |hfe| • ftest. APPROX + 11 V TURNON PULSE 2.0 VCC Vin RL 1.0 0.7 0.5 SCOPE RK t1 APPROX + 11 V Vin t2 TURNOFF PULSE t3 t, TIME (s) µ CjdCeb Vin 0 VEB(off) - 4.0 V t1 7.0 ns 100 t2 500 µs t3 15 ns 0.3 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 DUTY CYCLE 2.0% APPROX - 9.0 V tr @ VCC = 30 V IC/IB = 10 TJ = 25°C Figure 2. Switching Time Equivalent Circuit td @ VBE(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn–On Time http://onsemi.com 3 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BD241C BD242C 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZθJC (t) = r(t) RθJC RθJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZθJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Thermal Response 10 5.0 1.0 ms 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 µs 2.0 1.0 SECOND BREAKDOWN LIMITED @ TJ 150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED 0.5 0.2 CURVES APPLY BELOW RATED VCEO 0.1 5.0 BD241C, BD242C 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 Figure 5. Active Region Safe Operating Area 1.0 0.7 0.5 0.3 0.2 ts′ tf @ VCC = 30 V 300 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C tf @ VCC = 10 V 0.1 100 Ceb 70 50 0.07 0.05 0.03 0.03 TJ = + 25°C 200 CAPACITANCE (pF) t, TIME (s) µ 3.0 2.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.1 2.0 3.0 Figure 6. Turn–Off Time Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 20 30 40 BD241C BD242C hFE, DC CURRENT GAIN 300 100 70 50 VCE = 2.0 V TJ = 150°C 25°C -55°C 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 TJ = 25°C 1.6 1.2 IC = 0.3 A 0.4 0 3.0 1.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (A) µ +1.5 +1.0 *θVC FOR VCE(sat) +0.5 0 -0.5 -1.0 -1.5 θVB FOR VBE -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 Figure 11. Temperature Coefficients 101 TJ = 150°C 100 100°C REVERSE FORWARD 25°C ICES -0.1 0 +0.1 +0.2 +0.3 1000 *APPLIES FOR IC/IB ≤ 5.0 TJ = - 65°C TO + 150°C +2.0 Figure 10. “On” Voltages VCE = 30 V 10-3 -0.4 -0.3 -0.2 500 IC, COLLECTOR CURRENT (AMP) 102 10-2 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) 103 10-1 5.0 +2.5 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) TJ = 25°C 1.0 0.6 2.0 Figure 9. Collector Saturation Region 1.4 0.8 3.0 A 0.8 Figure 8. DC Current Gain 1.2 1.0 A +0.4 +0.5 +0.6 2.0 3.0 107 106 105 IC ≈ ICES IC = 2 x ICES 104 103 102 VCE = 30 V IC = 10 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance http://onsemi.com 5 BD241C BD242C PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AB –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N http://onsemi.com 6 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BD241C BD242C Notes http://onsemi.com 7 BD241C BD242C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 BD241C/D