2SC5526 Transistors High-speed Switching Transistor (60V, 12A) 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 2) High switching speed. (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA2007. 10.0 4.5 2.8 8.0 5.0 14.0 15.0 12.0 φ 3.2 1.2 1.3 0.8 2.54 0.75 2.54 2.6 (1) (2) (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) (1) (2) (3) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ROHM : TO-220FN Symbol Limits Unit VCBO VCEO 100 60 5 12 20 V V V A(DC) A(Pulse) VEBO Collector current IC Collector power dissipation PC 2 25 W W(Tc=25°C) Tj Tstg 150 −55 ∼ +150 °C °C Junction temperature Storage temperature * Single pulse, * Pw=100ms !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5526 TO-220FN EF − 500 !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) 100 60 5 − − − − − − 100 − − − − − − − − − − − V V V µA µA V V V V − 80 − − − 10 10 0.3 0.5 1.2 1.5 320 − ton tstg − − − 200 − − tf − 0.1 Parameter DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time * Measured using pulse current hFE fT Cob − 0.3 1.5 0.3 MHz pF µs µs µs Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 100V VEB = 5V IC/IB = 6A/0.3A IC/IB = 8A/0.4A IC/IB = 6A/0.3A IC/IB = 8A/0.4A VCE/IC = 2V/2A VCB = 10V , IE = 1A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 6A , RL = 5Ω IB1 = −IB2 = 0.3A VCC 30V * * * * *