2SC5531 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5531 !External dimensions (Units : mm) !Features 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) (IC / IB =1A / 0.2A) 2) High breakdown voltage. VCEO=400V 3) Fast switching. tf ≤1.0µs (IC=0.8A) 13.1 !Structure Three-layer, diffused planar type NPN silicon transistor. !Absolute maximum ratings (Ta=25°C) Symbol Limits Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 2 A(DC) ICP 4 A(Pulse) 2 W Collector current Collector power dissipation Unit PC 30 Junction temperature Tj 150 ˚C Storage temperature Tstg -55~+150 ˚C * W(Tc=25˚C) * Single pulse Pw=10ms !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 400 - - V Collector-emitter breakdown voltage BVCEO 400 - - V IC=1mA Emitter-base breakdown voltage BVEBO 7 - - V IE=50µA Collector cutoff current ICBO - - 10 µA VCB=400V Emitter cutoff current IEBO - - 10 µA VEB=7V Collector-emitter saturation voltage VCE(sat) - - 1 V IC/IB=1A/0.2A Base-emitter saturation voltage VBE(sat) - - 1.5 V IC/IB=1A/0.2A VCE=5V, IC=0.1A Conditions IC=50µA hFE 25 - 50 - Transition frequency fT - 10 - MHz Output capacitance Cob - 30 - pF VCB=10V, IE=0A, f=1MHz Turn-on time tON - - 1 µs Storage time tstg - - 2.5 µs tf - - 1 µs IC=0.8A, RL=250Ω IB1=-IB2=0.08A VCC 200V Refer to measurement circuit diagram DC current transfer ratio Fall time *1 Measured using pulse current !Packaging specifications and hFE Type 2SC5531 Package PSD3 B hFE Code Basic ordering unit (pieces) 500 10.1 2.54 VCE=10V,IE=-0.5A,f=5MHz *1 4.5 1.3 0to0.3 0.5Min. ROHM : PSD3 EIAJ : SC-83A Parameter 8.8 0.4 1.3 1.24 0.78 (3) (2) (1) 5.08 3.2 (1) Base (2) Collector (3) Emitter