2SC5532 Transistors High-voltage Switching Transistor (400V, 5A) 2SC5532 !Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A) 2) High switching speed. (tf : Max. 1µs at Ic =4A) 3) Wide SOA (safe operating area). !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO 400 400 V V VEBO IC 7 5 7 V A A 30 150 -55~+150 W (Tc = 25°C) ICP Collector power dissipation PC Junction temperature Storage temperature Tj Tstg * °C °C * Single pulse, Pw = 100ms. !Packaging specifications and hFE Type 2SC5532 Package hFE TO-220FN AB Code Basic ordering unit (pieces) 500 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 400 400 - - V V Emitter-base breakdown voltage BVEBO - IEBO 7 - - 10 10 V µA µA VCE(sat) VBE(sat) - - 1 1.5 V V - - Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage ICBO - Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 400V VEB = 5V IC/IB = 5A/1A IC/IB = 5A/1A DC current transfer ratio Transition frequency hFE fT 16 - 15 50 - MHz Output capacitance Cob ton - 80 - pF VCB = 10V , IE = 0A , f = 1MHz - - 1 µs IC = 4A , RL = 50Ω tstg - - 2.5 µs tf - - 1 µs IB1 = −IB2 = 0.4A VCC 200V Turn-on time Storage time Fall time * Measured using pulse current. VCE/IC = 5V/2A VCB = 10V , IE = −0.5A , f = 5MHz * * *