KEXIN 2SC5161

Transistors
SMD Type
High Voltage Switching Transistor
2SC5161
TO-252
6.50
+0.2
5.30-0.2
Features
Unit: mm
2.30
+0.1
-0.1
+0.15
1.50 -0.15
+0.15
-0.15
+0.8
0.50-0.7
Low VCE(sat).
0.127
max
NPN silicon transistor
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
+0.25
2.65 -0.1
Fast switching.tr = 1.0ìs,IC = 0.8A
+0.28
1.50 -0.1
+0.2
9.70 -0.2
High breakdown voltage.VCEO = 400V
+0.15
0.50 -0.15
VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
400
V
Collector to emitter voltage
VCES
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current *
ICP
4
A(Puse)
Collector current
IC
2
A(DC)
Collector power dissipation
TC = 25
PC
10
W
1
Ta = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Single pulse pw=10ms
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1
Transistors
SMD Type
2SC5161
Electrical Characteristics Ta = 25
Parameter
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
400
V
collector-emitter breakdown voltage
BVCEO
IC=1mA
400
V
IC=1.0A,IB1=0.1A,L=1mH
400
V
7
V
collector-emitter voltage
Emitter-base breakdown voltage
collecotr cutoff current
Emitter cutoff current
VCEO(SUS)
BVEBO
IE=50ìA
ICBO
VCB=400V
10
ìA
IEBO
VEB=7V
10
ìA
Collector to emitter saturation voltage
VCE(sat)
IC/IB=1A/0.2A
1
V
Base to emitter saturation voltage
VBE(sat)
IC/IB=1A/0.2A
1.5
V
DC current transfer ratio
hFE
VCE=5V,IC=0.1A
25
50
VCE=10V.IE=-0.1A.f=5MHz
10
MHz
cob
VCB=10V,IE=0A,f=1MHz
30
pF
Turn-on time
ton
IC=0.8A,RL=250Ù
Storage time
tstg
IB1=-IB2=0.08A
Transition frequency
fT
Output capacitance
Fall time
tf
hFE Classification
2
Symbol
ltem
B
hFE
25 to 50
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VCC=200V
1
ìs
2.5
ìs
1
ìs