2SD2616 Transisitors Power Transistor (100V, 5A) 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits Unit VCBO VCEO 100 100 VEBO 5 5 10 V V V A(DC) A(Pulse) 2 W 30 150 W(Tc=25˚C) ˚C ˚C Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg -55~+150 * * Single pulse, Pw=100ms !Packaging specifications and Hfe Type 2SD2616 Package hFE TO-220FN E 500 Code Basic ordering unit (pieces) !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 100 100 - Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVEBO 5 V V V ICBO 10 10 µA µA Collector-emitter saturation voltage VCE(sat) - - - 0.3 1.0 V IC/IB=3A/0.3A Base-emitter saturation voltage DC current transfer ratio VBE(sat) IC/IB=3A/0.3A VCE/IC=5V/1A IEBO Transition frequency fT 100 - Output capacitance Cob - * Measured using pulse current. hFE - 1.5 200 V 8 - MHz 100 - pF - Conditions IC=50µA IC=1mA IE=50µA VCB=100V VEB=5V VCE=5V , IE=-0.5A , f=5MHz VCB=10V , IE=0A , f=1MHz * * *