NSC LMH6628EP

October 15, 2010
LMH6628EP
Enhanced Plastic Dual Wideband, Low Noise, Voltage
Feedback Op Amp
General Description
The National LMH6628EP is a high speed dual op amp that
offers a traditional voltage feedback topology featuring unity
gain stability and slew enhanced circuitry. The LMH6628EP's
low noise and very low harmonic distortion combine to form
a wide dynamic range op amp that operates from a single (5V
to 12V) or dual (±5V) power supply.
Each of the LMH6628EP's closely matched channels provides a 300MHz unity gain bandwidth and low input voltage
). Low 2nd/3rd harmonic distortion
noise density (2nV/
(−65/−74dBc at 10MHz) make the LMH6628EP a perfect
wide dynamic range amplifier for matched I/Q channels.
With its fast and accurate settling (12ns to 0.1%), the
LMH6628EP is also an excellent choice for wide dynamic
range, anti-aliasing filters to buffer the inputs of hi resolution
analog-to-digital converters. Combining the LMH6628EP's
two tightly matched amplifiers in a single 8-pin SOIC package
reduces cost and board space for many composite amplifier
applications such as active filters, differential line drivers/receivers, fast peak detectors and instrumentation amplifiers.
The LMH6628EP is fabricated using National’s VIP10™ complimentary bipolar process.
To reduce design times and assist in board layout, the
LMH6628EP is supported by an evaluation board
(CLC730036).
ENHANCED PLASTIC
•
•
•
•
•
•
Extended Temperature Performance of −40°C to +85°C
Baseline Control - Single Fab & Assembly Site
Process Change Notification (PCN)
Qualification & Reliability Data
Solder (PbSn) Lead Finish is standard
Enhanced Diminishing Manufacturing Sources (DMS)
Support
Features
■
■
■
■
■
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■
Wide unity gain bandwidth: 300MHz
Low noise: 2nV/
Low Distortion: −65/−74dBc (10MHz)
Settling time: 12ns to 0.1%
Wide supply voltage range: ±2.5V to ±6V
High output current: ±85mA
Improved replacement for CLC428
Applications
■
■
■
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High speed dual op amp
Low noise integrators
Selected Military Applications
Selected Avionics Applications
Ordering Information
Part Number
VID Part Number
NS Package Number (Note 3)
LMH6628MAEP
V62/04624-01
M08A
(Note 1, Note 2)
TBD
TBD
Note 1: For the following (Enhanced Plastic) version, check for availability: LMH6628MAXEP. Parts listed with an "X" are provided in Tape & Reel
and parts without an "X" are in Rails.
Note 2: FOR ADDITIONAL ORDERING AND PRODUCT INFORMATION, PLEASE VISIT THE ENHANCED PLASTIC WEB SITE AT: www.national.com/
mil
Note 3: Refer to package details under Physical Dimensions
VIP10™ is a trademark of National Semiconductor Corporation.
© 2010 National Semiconductor Corporation
200886
200886 Version 4 Revision 2
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Print Date/Time: 2010/10/15 15:22:20
LMH6628EP Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp
OBSOLETE
LMH6628EP Enhanced Plastic
Connection Diagram
8-Pin SOIC
20088635
Top View
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If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 7)
Human Body Model
Machine Model
Supply Voltage
Short Circuit Current
Common-Mode Input Voltage
Differential Input Voltage
Operating Ratings
Electrical Characteristics
(Note 4)
Thermal Resistance (Note 8)
Package
(θJC)
2kV
200V
13.5
(Note 6)
V+ - V−
V+ - V−
+150°C
−65°C to +150°C
+300°C
SOIC
65°C/W
Temperature Range
Nominal Supply Voltage
(θJA)
145°C/W
−40°C to +85°C
±2.5V to ±6V
(Note 5)
VCC = ±5V, AV = +2V/V, RF = 100Ω, RG = 100Ω, RL = 100Ω; unless otherwise specified. Boldface limits apply at the
temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Frequency Domain Response
GB
Gain Bandwidth Product
VO < 0.5VPP
SSBW
-3dB Bandwidth, AV = +1
VO < 0.5VPP
SSBW
-3dB Bandwidth, AV = +2
VO < 0.5VPP
GFL
Gain Flatness
VO< 0.5VPP
GFP
Peaking
GFR
Rolloff
LPD
Linear Phase Deviation
200
MHz
300
MHz
100
MHz
DC to 200MHz
0.0
dB
DC to 20MHz
.1
dB
DC to 20MHz
.1
deg
180
Time Domain Response
TR
Rise and Fall Time
1V Step
4
ns
TS
Settling Time
2V Step to 0.1%
12
ns
OS
Overshoot
1V Step
1
%
SR
Slew Rate
4V Step
550
V/µs
300
Distortion And Noise Response
HD2
2nd Harmonic Distortion
1VPP, 10MHz
−65
dBc
HD3
3rd Harmonic Distortion
1VPP, 10MHz
−74
dBc
Equivalent Input Noise
VN
Voltage
1MHz to 100MHz
2
nV/
IN
Current
1MHz to 100MHz
2
pA/
XTLKA
Crosstalk
Input Referred, 10MHz
−62
dB
63
dB
Static, DC Performance
GOL
Open-Loop Gain
VIO
Input Offset Voltage
DVIO
IBN
DIBN
IOS
IOSD
56
53
±.5
Average Drift
5
Input Bias Current
±.7
Average Drift
150
Input Offset Current
0.3
Average Drift
±2
±2.6
mV
µV/°C
±20
±30
µA
nA/°C
±6
µA
5
nA/°C
PSRR
Power Supply Rejection Ratio
60
46
70
dB
CMRR
Common-Mode Rejection Ratio
57
54
62
dB
3
200886 Version 4 Revision 2
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LMH6628EP Enhanced Plastic
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering 10 sec)
Absolute Maximum Ratings (Note 4)
LMH6628EP Enhanced Plastic
Symbol
ICC
Parameter
Supply Current
Conditions
Min
Typ
Max
Units
Per Channel, RL = ∞
7.5
7.0
9
12
12.5
mA
Miscellaneous Performance
RIN
Input Resistance
Common-Mode
500
kΩ
CIN
Input Capacitance
Differential-Mode
200
kΩ
Common-Mode
1.5
pF
ROUT
Output Resistance
Differential-Mode
1.5
pF
Closed-Loop
.1
VO
Output Voltage Range
Ω
±3.8
RL = ∞
V
±3.5
V
±3.7
V
±85
mA
RL = 100Ω
VOL
CMIR
Input Voltage Range
IO
Output Current
±3.2
±3.1
Common- Mode
±50
Note 4: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.
Note 5: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ >
TA. See Note 6 for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation. Individual
parameters are tested as noted.
Note 6: Output is short circuit protected to ground, however maximum reliability is obtained if output current does not exceed 160mA.
Note 7: Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω In series with 200pF.
Note 8: The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX)-TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
Typical Performance Characteristics
(TA = +25°, AV = +2, VCC = ±5V, Rf =100Ω, RL = 100Ω, unless
specified)
Non-Inverting Frequency Response
Inverting Frequency Response
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LMH6628EP Enhanced Plastic
Frequency Response vs. Load Resistance
Frequency Response vs. Output Amplitude
20088610
20088625
Frequency Response vs. Capacitive Load
Gain Flatness & Linear Phase
20088616
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LMH6628EP Enhanced Plastic
Channel Matching
Channel to Channel Crosstalk
20088614
Pulse Response (VO = 2V)
20088609
Pulse Response (VO = 100mV)
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LMH6628EP Enhanced Plastic
2nd Harmonic Distortion vs. Output Voltage
3rd Harmonic Distortion vs. Output Voltage
20088607
20088608
2nd & 3rd Harmonic Distortion vs. Frequency
PSRR and CMRR (±5V)
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LMH6628EP Enhanced Plastic
PSRR and CMRR (±2.5V)
Closed Loop Output Resistance (±2.5V)
20088623
20088618
Closed Loop Output Resistance (±5V)
Open Loop Gain & Phase (±2.5V)
20088619
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LMH6628EP Enhanced Plastic
Open Loop Gain & Phase (±5V)
Recommended RS vs. CL
20088620
20088626
DC Errors vs. Temperature
Maximum VO vs. RL
20088646
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20088645
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LMH6628EP Enhanced Plastic
2-Tone, 3rd Order Intermodulation Intercept
Voltage & Current Noise vs. Frequency
20088644
20088647
Settling Time vs. Accuracy
20088648
OUTPUT AND SUPPLY CONSIDERATIONS
With ±5V supplies, the LMH6628EP is capable of a typical
output swing of ±3.8V under a no-load condition. Additional
output swing is possible with slightly higher supply voltages.
For loads of less than 50Ω, the output swing will be limited by
the LMH6628EP's output current capability, typically 85mA.
Output settling time when driving capacitive loads can be improved by the use of a series output resistor. See the plot
labeled "RS vs. CL" in the Typical Performance section.
Application Section
LOW NOISE DESIGN
Ultimate low noise performance from circuit designs using the
LMH6628EP requires the proper selection of external resistors. By selecting appropriate low valued resistors for RF and
RG, amplifier circuits using the LMH6628EP can achieve output noise that is approximately the equivalent voltage input
multiplied by the desired gain (AV).
noise of 2nV/
LAYOUT
Proper power supply bypassing is critical to insure good high
frequency performance and low noise. De-coupling capacitors of 0.1μF should be placed as close as possible to the
power supply pins. The use of surface mounted capacitors is
recommended due to their low series inductance.
A good high frequency layout will keep power supply and
ground traces away from the inverting input and output pins.
Parasitic capacitance from these nodes to ground causes frequency response peaking and possible circuit oscillation. See
OA-15 for more information. National suggests the 730036
DC BIAS CURRENTS AND OFFSET VOLTAGES
Cancellation of the output offset voltage due to input bias currents is possible with the LMH6628EP. This is done by making
the resistance seen from the inverting and non-inverting inputs equal. Once done, the residual output offset voltage will
be the input offset voltage (VOS) multiplied by the desired gain
(AV). National Application Note OA-7 offers several solutions
to further reduce the output offset.
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the circuit and provides a high input impedance for the source.
As shown in Figure 2, the circuit provides a 13.1ns delay (with
R = 40.2Ω, C = 47pF). RF and RG should be of equal and low
value for parasitic insensitive operation.
ANALOG DELAY CIRCUIT (ALL-PASS NETWORK)
The circuit in Figure 1 implements an all-pass network using
the LMH6628EP. A wide bandwidth buffer (LM7121) drives
20088601
FIGURE 1.
In the circuit shown in Figure 3, one of the LMH6628EP's
amps is used as a "driver" and the other as a difference "receiver" amplifier. The output impedance of the "driver" is
essentially zero. The two R's are chosen to match the characteristic impedance of the transmission line. The "driver" op
amp gain can be selected for unity or greater.
Receiver amplifier A2 (B2) is connected across R and forms
differential amplifier for the signals transmitted by driver A2
(B2). If RF equals RG, receiver A2 (B1) will then reject the signals from driver A1 (B1) and pass the signals from driver B1
(A1).
20088602
FIGURE 2. Delay Circuit Response to 0.5V Pulse
The circuit gain is +1 and the delay is determined by the following equations.
20088603
(1)
FIGURE 3.
The output of the receiver amplifier will be:
(2)
where Td is the delay of the op amp at AV = +1.
The LMH6628EP provides a typical delay of 2.8ns at its −3dB
point.
(3)
Care must be given to layout and component placement to
maintain a high frequency common-mode rejection. The plot
of Figure 4 shows the simultaneous reception of signals transmitted at 1MHz and 10MHz.
FULL DUPLEX DIGITAL OR ANALOG TRANSMISSION
Simultaneous transmission and reception of analog or digital
signals over a single coaxial cable or twisted-pair line can reduce cabling requirements. The LMH6628EP's wide bandwidth and high common-mode rejection in a differential
amplifier configuration allows full duplex transmission of
video, telephone, control and audio signals.
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LMH6628EP Enhanced Plastic
(SOIC) dual op amp evaluation board as a guide for high frequency layout and as an aid in device evaluation.
LMH6628EP Enhanced Plastic
20088631
20088637
FIGURE 4.
FIGURE 6.
POSITIVE PEAK DETECTOR
The LMH6628EP's dual amplifiers can be used to implement
a unity-gain peak detector circuit as shown in Figure 5.
A current source, built around Q1, provides the necessary
bias current for the second amplifier and prevents saturation
when power is applied. The resistor, R, closes the loop while
diode D2 prevents negative saturation when VIN is less than
VC. A MOS-type switch (not shown) can be used to reset the
capacitor's voltage.
The maximum speed of detection is limited by the delay of the
op amps and the diodes. The use of Schottky diodes will provide faster response.
ADJUSTABLE OR BANDPASS EQUALIZER
A "boost" equalizer can be made with the LMH6628EP by
summing a bandpass response with the input signal, as
shown in Figure 7.
20088605
FIGURE 5.
The acquisition speed of this circuit is limited by the dynamic
resistance of the diode when charging Chold. A plot of the
circuit's performance is shown in Figure 6 with a 1MHz sinusoidal input.
20088606
FIGURE 7.
The overall transfer function is shown in Eq. 5.
(4)
To build a boost circuit, use the design equations Eq. 6 and
Eq. 7.
(5)
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LMH6628EP Enhanced Plastic
(6)
Select R2 and C using Eq. 6. Use reasonable values for high
frequency circuits - R2 between 10Ω and 5kΩ, C between
10pF and 2000pF. Use Eq. 7 to determine the parallel combination of Ra and Rb. Select Ra and Rb by either the 10Ω to
5kΩ criteria or by other requirements based on the impedance
Vin is capable of driving. Finish the design by determining the
value of K from Eq. 8.
(7)
Figure 8 shows an example of the response of the circuit of
Figure 9, where fo is 2.3MHz. The component values are as
follows: Ra=2.1kΩ, Rb = 68.5Ω, R2 = 4.22kΩ, R = 500Ω, KR
= 50Ω, C = 120pF.
20088643
FIGURE 8.
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LMH6628EP Enhanced Plastic
Physical Dimensions inches (millimeters) unless otherwise noted
8-Pin SOIC
NS Package Number M08A
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LMH6628EP Enhanced Plastic
Notes
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LMH6628EP Enhanced Plastic Dual Wideband, Low Noise, Voltage Feedback Op Amp
Notes
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