NSC LME49990

Ultra-low Distortion, Ultra-low Noise Operational Amplifier
General Description
Key Specifications
The LME49990 is part of the ultra-low distortion, low noise,
high slew rate operational amplifier series optimized and fully
specified for high performance, high fidelity applications. The
LME49990 combines low voltage noise density (0.9nV/√Hz)
with vanishing low THD+N (0.00001%). The LME49990 has
a high slew rate of ±22V/μs and an output current capability
of ±27mA. It drives 600Ω loads to within 2V of either power
supply voltage.
The LME49990’s outstanding Gain (135dB), CMRR (137dB),
PSRR (144dB), and VOS (130μV) give the amplifier excellent
operational amplifier DC performance. The LME49990 has a
wide supply range of ±5V to ±18V. The LME49990 is unity
gain stable and is available in an 8-lead narrow body SOIC.
■ Input Noise Density (f = 1kHz)
0.9nV/√Hz (typ)
1.3nV/√Hz (max)
■ THD+N
(AV = 1, VOUT = 3VRMS, fIN = 1kHz)
RL = 600Ω
0.00001%
■ 1/f Corner Frequency
43Hz (typ)
■ Slew Rate
±22V/μs (max)
■ Gain Bandwidth
(AV = 104, RL = 2kΩ,
f = 90kHz)
110MHz (typ)
■ PSRR
144dB (typ)
■ CMRR
137dB (typ)
■ Power Supply Voltage Range
±5V to ±18V
Features
■ Easily drives 600Ω load
■ Output short circuit protection
Applications
■
■
■
■
■
■
Ultra high quality audio signal processing
Active Filters
Preamplifiers
Spectrum analyzers
Ultrasound preamplifiers
Sigma-Delta ADC/DAC buffers
300597e6
FIGURE 1. Voltage Noise Spectral Density
300597d7
FIGURE 2. THD+N vs Frequency
Overture® is a registered trademark of National Semiconductor.
© 2010 National Semiconductor Corporation
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LME49990 Ultra-low Distortion, Ultra-low Noise Operational Amplifier
January 8, 2010
LME49990 Overture®
E-Series
LME49990
Connection Diagram
30059702
Order Number LME49990MA
See NS Package Number — M08A
Ordering Information
Order Number
Package
Package DWG #
Transport Media
MSL Level
LME49990MA
8 Ld SOIC
M08A
95 units in reel
1
LME49990MAX
8 Ld SOIC
M08A
2500 units in tape and reel
1
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2
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
(VS = V+ - V-)
Storage Temperature
Input Voltage
Output Short Circuit (Note 3)
Power Dissipation
ESD Rating (Note 4)
ESD Rating (Note 5)
θJA (SO)
Soldering Information
Infrared or Convection (20 sec)
38V
−65°C to 150°C
(V-) - 0.3V to (V+) + 0.3V
Continuous
Internally Limited
2000V
200V
Electrical Characteristics
1000V
150°C
Operating Ratings
145°C/W
260°C
(Note 1)
Temperature Range
TMIN ≤ TA ≤ TMAX
Supply Voltage Range
–40°C ≤ TA ≤ 85°C
±5V ≤ VS ≤ ±18V
(Note 2)
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified.
LME49990
Symbol
Parameter
Conditions
Typical
Limit
(Note 6)
(Note 7)
Units
(Limits)
POWER SUPPLY
VCC
±5
±18
Operating Supply Voltage
ICCQ
Quiescent Current
VCM = 0V, VO = 0V, IO = 0mA
VCC = ±5V
VCC = ±15V
VCC = ±18V
PSRR
Power Supply Rejection Ratio
VCC = ±5V to ±18V
TMIN−TMAX
V (min)
V (max)
8
9
9
10
11
12
144
137
119
116
dB (min)
dB (min)
0.00002
% (max)
%
mA (max)
DYNAMIC PERFORMANCE
THD+N
Total Harmonic Distortion + Noise
AV = 1, VO = 3VRMS, RL= 1kΩ
f = 1kHz
f = 20kHz
0.00001
0.00003
IMD
Intermodulation Distortion
AV = 1, VO = 3VRMS
Two-tone 60Hz & 7kHz 4:1
0.000017
%
GBWP
Gain Bandwith Product
AV = 104, RL = 2kΩ, f = 90kHz
110
MHz
FPBW
Full Power Bandwidth
AV = –1, VO = 20VPP, RL = 1kΩ
291
kHz
SR
ts
Slew Rate
Settling time
AV = –1, VO = 20VPP
RL = 1kΩ
22
AV = –1, VO = 10VPP, RL = 1kΩ
0.01%
590
16.5
V/μs (min)
ns
VO = ±10V
AVOL
Open-Loop Gain
RL = 2kΩ
TMIN – TMAX
135
124
120
dB (min)
dB
RL = 600Ω
TMIN – TMAX
130
122
120
dB (min)
dB
3
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LME49990
ESD Rating (Note 8)
Junction Temperature
Thermal Resistance
Absolute Maximum Ratings (Note 1)
LME49990
LME49990
Symbol
Parameter
Conditions
Typical
Limit
(Note 6)
(Note 7)
Units
(Limits)
NOISE
eN
Input Noise Voltage Density
f = 10Hz
1.4
f = 100Hz
1.0
f = 1kHz
0.88
f = 10kHz
0.88
30
0.12
1
V_NOISE
RMS Voltage Noise
BW = 0.1Hz to 10Hz (Note 4)
BW = 10Hz to 20kHz
BW = 10Hz to 1MHz
iN
Input Current Noise Density
f = 1kHz
2.8
130
300
1.3
nV/√Hz
nV/√Hz
nV/√Hz (max)
nV/√Hz
nVPP
0.2
1.2
μV (max)
μV (max)
pA/√Hz
INPUT CHARACTERISTICS
μV (max)
μV (max)
VOS
Offset Voltage
VCC = ±18V, VCM = 0v, VO = 0V
VCC = ±18V, TMIN − TMAX
VOS Drift
Input Offset Voltage Drift vs
Temperature (ΔVOS/ΔTemp)
VCC = ±18V, TMIN − TMAX
IBIAS
Input Bias Current
VCC = ±18V, VCM = 0v, VO = 0V
VCC = ±18V, TMIN − T MAX
30
150
500
1000
nA (max)
nA (max)
IOS
Input Offset Current
VCC = ±18V, VCM = 0v, VO = 0V
VCC = ±18V, TMIN − TMAX
35
95
400
1000
nA (max)
nA (max)
VIN-CM
Common-Mode Input Voltage Range
12
11
V (min)
–10V<VCM<10V
TMIN − TMAX
137
132
118
110
dB (min)
dB (min)
VCC = ±15V, RL = 2kΩ
±13
±13
±16
12.5
12
14.0
V (min)
V (min)
V (min)
+75/-70
+55/-50
mA (min)
26
24
mA (min)
CMRR
Common-Mode Rejection
1000
2000
μV/°C
2
OUTPUT CHARACTERISTICS
VOUT
Output Voltage Swing
VCC = ±15V, RL = 600Ω
ISHIRT
Output Short-Circuit Current
VCC = ±18V
IOUT
Output Current
VCC = ±18V, RL = 600Ω
VCC = ±18V, RL = 600Ω
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the
device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 3: Amplifier output connected to GND, any number of amplifiers within a package.
Note 4: Human body model, applicable std. JESD22-A114C.
Note 5: Machine model, applicable std. JESD22-A115-A.
Note 6: Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of product
characterization and are not guaranteed.
Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.
Note 8: Charge device model, applicable std JESD22–C101–A.
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LME49990
Typical Performance Characteristics
THD+N vs Output Voltage
VCC = –VEE = 15V, RL = 2kΩ
THD+N vs Output Voltage
VCC = –VEE = 18V, RL = 2kΩ
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THD+N vs Output Voltage
VCC = –VEE = 5V, RL = 2kΩ
THD+N vs Output Voltage
VCC = –VEE = 15V, RL = 600Ω
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THD+N vs Output Voltage
VCC = –VEE = 18V, RL = 600Ω
THD+N vs Output Voltage
VCC = –VEE = 5V, RL = 600Ω
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LME49990
THD+N vs Frequency
VCC = –VEE = 15V,
RL = 2kΩ, VOUT = 3VRMS
THD+N vs Frequency
VCC = –VEE = 18V,
RL = 2kΩ, VOUT = 3VRMS
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THD+N vs Frequency
VCC = –VEE = 15V,
RL = 600Ω, VOUT = 3VRMS
THD+N vs Frequency
VCC = –VEE = 18V,
RL = 600Ω, VOUT = 3VRMS
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IMD vs Output Voltage
VCC = –VEE = 15V, RL = 2kΩ
IMD vs Output Voltage
VCC = –VEE = 18V, RL = 2kΩ
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6
LME49990
IMD vs Output Voltage
VCC = –VEE = 5V, RL = 2kΩ
IMD vs Output Voltage
VCC = –VEE = 15V, RL = 600Ω
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IMD vs Output Voltage
VCC = –VEE = 18V, RL = 600Ω
IMD vs Output Voltage
VCC = –VEE = 5V, RL = 600Ω
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Voltage Noise Density vs Frequency
Current Noise Density vs Frequency
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LME49990
PSRR vs Frequency
VCC = –VEE = 15V,
RL = 2kΩ, VRIPPLE = 200mVpp
+PSRR vs Frequency
300597f7
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—PSRR vs Frequency
Output Voltage vs Supply Voltage
RL = 2kΩ, THD+N = 1%
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Output Voltage vs Supply Voltage
RL = 600Ω, THD+N = 1%
Large-Signal Transient Response
AV = –1, CL = 100pF
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LME49990
Application Hints
OUTPUT DRIVE AND STABILITY
The LME49990 is unity gain stable from both input (both stable when gain = -1 or gain = 1). It able to drive resistive load
600Ω with output circuit with a typical 27mA. Capacitive loads
up to 100pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from
the output. The most straight forward way to do this is to put
a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is accidentally
shorted.
The effective load impedance (including feedback resistance)
should be kept above 600Ω for fast settling. Load capacitance
should also be minimized if good settling time is to be optimized. Large feedback resistors will make the circuit more
susceptible to stray capacitance, so in high-speed applications keep the feedback resistors in the 1kΩ to 2 kΩ range
whenever practical.
300597c7
FIGURE 3. LME4990 Output Compensation Network
SUPPLY BYPASSING
To achieve a low noise and high-speed audio performance,
power supply bypassing is extremely important. Applying
multiple bypass capacitors is highly recommended. From experiment results, a 10μF tantalum, 2.2μF ceramic, and a
0.47μF ceramic work well. All bypass capacitors leads should
be very short. The ground leads of capacitors should also be
separated to reduce the inductance to ground. To obtain the
best result, a large ground plane layout technique is recommended and it was applied in the LME49990 evaluation
board.
OUTPUT COMPENSATION
In most of the audio applications, the device will be operated
in a room temperature and compensation networks are not
necessary. However, the consideration of output network as
shown in Figure 3 may be taken into account for some of the
high performance audio applications such as high speed data
conversion or when operating in a relatively low junction temperature. The compensation network will also provide a small
improvement in settling time for the response time demanding
applications.
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LME49990
Typical Applications
Balanced Input Mic Amp
30059743
Illustration is:
V0 = 101(V2 − V1)
300597c6
MFB 3rd Order PCM LPF
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SETTLING TIME AND SLEW RATE MEASUREMENTS
The settling time of LME49990 may be verified using the test
circuit in Figure 6. The LME49990 is connected for inverting
operation, and the output voltage is summed with the input
voltage step. When the LME49990’s output voltage is equal
to the input voltage, the voltage on the PROBE 1 will be zero.
Any voltage appearing at this point will represent an error. And
the settling time is equal to the time required for the error signal displayed on the oscilloscope to decay to less than onehalf the necessary accuracy (See Settling Time – Output
Swing photo). For a 10V input signal, settling time to 0.01%
(1mV) will occur when the displayed error is less than 0.5mV.
Since settling time is strongly dependent on slew rate, settling
will be faster for smaller signal swings. The LME49990’s inverting slew rate is faster than its non-inverting slew rate, so
settling will be faster for inverting applications, as well.
300597c1
FIGURE 6: Settling Time Test Circuit
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FIGURE 7: Slew Rate Test Circuit
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LME49990
It is important to note that the oscilloscope input amplifier may
be overdriven during a settling time measurement, so the oscilloscope must be capable of recovering from overdrive very
quickly. The signal generator used for this measurement must
be able to drive 50Ω with a very clean ±10VPP square wave.
The Slew Rate of LME49990 tells how fast it responses to a
transient or a step input. It may be measured by the test circuit
in Figure 7. The Slew Rate of LME49990 is specified in closeloop gain = -1 when the output driving a 1kΩ load at 20VPP.
The LME49990 behaves very stable in shape step response
and have a minimal ringing in both small and large signal step
response (See Typical Performance Characteristic). The slew
rate typical value reach as high as ±18V/μS was measured
when the output reach -20V refer to the start point when input
voltage equals to zero.
Application Information
LME49990
the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop gain is unaltered, the feedback available to correct distortion errors is reduced by 101,
which means that measurement resolution increases by 101.
To ensure minimum effects on distortion measurements,
keep the value of R1 low as shown in Figure 8.
This technique is verified by duplicating the measurements
with high closed loop gain and/or making the measurements
at high frequencies. Doing so produces distortion components that are within the measurement equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described circuit connected to an Audio
Precision System Two Cascade.
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by
LME49990 is below the capabilities of all commercially available equipment. This makes distortion measurements just
slightly more difficult than simply connecting a distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional resistor. Adding this
resistor extends the resolution of the distortion measurement
equipment.
The LME49990’s low residual distortion is an input referred
internal error. As shown in Figure 8, adding the 10Ω resistor
connected between the amplifier’s inverting and non-inverting
inputs changes the amplifier’s noise gain. The result is that
30059707
FIGURE 8: THD+N and IMD Distortion Test Circuit
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12
LME49990
Revision History
Rev
Date
1.0
12/16/09
Description
Initial released.
1.01
01/08/10
Input text edits.
13
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LME49990
Physical Dimensions inches (millimeters) unless otherwise noted
Dual-In-Line Package
Order Number LME49990MA
NS Package Number M08A
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14
LME49990
Notes
15
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LME49990 Ultra-low Distortion, Ultra-low Noise Operational Amplifier
Notes
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