ON Semiconductor BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage — • • • VCER(sus) = 475 Vdc 125 Watts Capability at 50 Volts VCE Sat Specified at – 40C = 2.0 V Max. at IC = 6.0 A Photoglass Passivation for Reliability and Stability COLLECTOR BASE ≈1k ≈ 30 EMITTER CASE 340D–02 TO–218 TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO(sus) 400 Vdc Collector–Emitter Voltage VCEV 475 Vdc Emitter–Base Voltage VEB 6.0 Vdc Collector Current — Continuous — Peak (Note 1) IC ICM 10 16 Adc Base Current — Continuous — Peak (Note 1) IB IBM 3.0 Adc Total Power Dissipation — TC = 25C — TC = 100C Derate above 25C PD 125 100 1.0 Watts Watts W/C TJ, Tstg –65 to +200 C Symbol Max Unit RθJC 1.0 C/W TL 275 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 10 1 Publication Order Number: BU323AP/D BU323AP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS1 Collector–Emitter Sustaining Voltage (Figure 1) L = 10 mH (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) VCEO(sus) Collector–Emitter Sustaining Voltage (Figure 1) (IC = 3 A, RBE = 100 Ohms, L = 500 µH) Unclamped VCER(sus) Vdc 400 Vdc 475 Collector Cutoff Current (Rated VCER, RBE = 100 Ohms) ICER 1 mAdc Collector Cutoff Current (Rated VCBO, IE = 0) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) ICBO 1 mAdc IEBO 40 mAdc ON CHARACTERISTICS1 DC Current Gain (IC = 3 Adc, VCE = 6 Vdc) (IC = 6 Adc, VCE = 6 Vdc) (IC = 10 Adc, VCE = 6 Vdc) hFE 300 150 50 Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 60 mAdc) (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc (IC = 6 Adc, IB = 120 mAdc, TC = –40C) VCE(sat) Base–Emitter Saturation Voltage (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc) (IC = 6 Adc, IB = 120 mAdc, TC = –40C) VBE(sat) Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc) VBE(on) 550 350 150 2000 Vdc 1.5 1.7 2.7 2.0 Vdc 2.2 3 2.4 Diode Forward Voltage (IF = 10 Adc) 2.5 Vdc Vf 2 3.5 Vdc Cob 165 350 pF ts 7.5 15 µs tf 5.2 15 µs IS/B See Figure 10 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Storage Time Fall Time (VCC = 12 Vdc, IC = 6 Adc, IB1 = IB2 = 0.3 Adc) Fig. 2 FUNCTIONAL TESTS Second Breakdown Collector Current with Base–Forward Biased Pulsed Energy Test (See Figure 12) 1Pulse IC2L/2 Test: Pulse Width = 300 µs, Duty Cycle = 2%. http://onsemi.com 2 550 mJ BU323AP VCC = 16 Vdc UNCLAMPED L 0V t1 ftest = 200 Hz PULSE WIDTH = 1 ms * 470 * Adjust t1 such that * IC reaches Required * value. C C 1N4001 B BC337 VCEO 2 Ω/20 W IC = 6 Adc 0 Vdc CLAMPED 47 20 ms VCC = 12 Vdc ≈ 15 Vdc VCER 100 40 TUT ≈ 1K ≈ 30 TUT 1N4001 Vclamp * B 51 100 ≈ 1K ≈ 30 E E IB = 0.3 Adc Figure 1. Sustaining Voltage Test Circuit Figure 2. Switching Times Test Circuit http://onsemi.com 3 BU323AP TJ = 150°C hFE, DC CURRENT GAIN 1000 700 500 25°C 300 200 100 70 50 VCE = 3 Vdc VCE = 6 Vdc 30 20 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2000 10 TJ = 25°C 2.5 2 10 A 1.5 1 0.5 0.002 1.7 1.6 1.5 IC/IB = 50 TJ = 25°C 1.4 1.3 1.2 1.1 1.0 0.9 TJ = -40°C 0.8 0.7 0.6 0.5 0.1 0.2 0.5 1.0 0.005 0.01 2.0 10 5.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) µ t, TIME (s) µ tf TJ = 25°C IC/IB = 20 VCE = 12 Vdc 0.3 0.2 0.1 0.2 0.3 2 TJ = 25°C TJ = -40°C 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (A) 104 3 1 0.7 0.5 1 Figure 6. Base–Emitter Voltage ts 2 0.5 2.2 2.1 2.0 Figure 5. Collector–Emitter Saturation Voltage 10 7 5 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) Figure 4. Collector Saturation Region VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 3. DC Current Gain 6 3 IC = 0.5 A 0.5 0.7 1 3 5 7 2 IC, COLLECTOR CURRENT (AMP) 10 VCE = 250 Vdc TJ = 150°C 103 IC = ICES 102 101 100 75°C 25°C FORWARD 10-1 REVERSE -0.2 0 +0.2 +0.4 +0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) 20 Figure 7. Turn–Off Switching Time Figure 8. Collector Cutoff Region http://onsemi.com 4 +0.8 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BU323AP 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.01 0.02 0.01 0.01 P(pk) RθJC(t) = r(t) RθJC RθJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 0.05 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.05 0.02 0.1 0.2 1 0.5 2 5 t, TIME (ms) 10 20 50 100 200 500 1000 2000 IC, COLLECTOR CURRENT (AMP) Figure 9. Thermal Response 20 10 100 µs 5.0 ms 5 2 1 1.0 ms 0.2 dc 0.1 0.01 0.005 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25C, TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC = 25°C BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 50 70 100 200 300 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 10. Forward Bias Safe Operating Area 50 INDUCTIVE LOAD POWER DERATING FACTOR (%) 100 VCC = 16 Vdc SECOND BREAKDOWN DERATING 80 60 VZ t1 0 Vdc 47 50 ms THERMAL DERATING 11 mH <1 C 1N4001 470 40 TUT BC337 ≈ 1K ≈ 30 100 VZ = 350 V (BU323P) VZ = 400 V (BU323AP) at IZ = 20 mA 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 200 2.2 B 0.22 µF 1N4001 E t1 to be selected such that IC reaches 10 Adc before switch–off. NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 11. Power Derating Figure 12. Ignition Test Circuit http://onsemi.com 5 BU323AP PACKAGE DIMENSIONS CASE 340D–02 TO–218 TYPE ISSUE B C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF V G STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 6 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BU323AP Notes http://onsemi.com 7 BU323AP ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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