ON Semiconductor NPN Darlington Complementary Silicon Power Transistors 2N6283 . . . designed for general–purpose amplifier and low–frequency switching applications. 2N6286 2N6284 PNP • High DC Current Gain @ IC = 10 Adc – • • 2N6287 hFE = 2400 (Typ) – 2N6284 = 4000 (Typ) – 2N6287 Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built–In Base–Emitter Shunt Resistors DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Symbo l 2N6283 2N6286 2N6284 2N6287 Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current – Continuous Peak IC 20 40 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 160 0.915 Watts W/C Operating and Storage Junction Temperature Range TJ,Tstg –65 to +200 C Rating Collector–Emitter Voltage CASE 1–07 TO–204AA (TO–3) *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 1.09 C/W *Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 100 125 75 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 1 Publication Order Number: 2N6284/D 2N6283 2N6284 2N6286 2N6287 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 – – – – 1.0 1.0 – – 0.5 5.0 – 2.0 750 100 18,000 – – – 2.0 3.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N6283, 2N6286 2N6284, 2N6287 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) – 2.8 Vdc Base–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) – 4.0 Vdc |hfe| 4.0 – MHz – – 400 600 300 – DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob 2N6283, 2N6284 2N6286, 2N6287 Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe *Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2% http://onsemi.com 2 pF – 2N6283 2N6284 2N6286 2N6287 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RB V2 RC TUT APPROX + 8.0 V 0 51 V1 APPROX 25 µs - 12 V tr, tf 10 ns DUTY CYCLE = 1.0% D1 8.0 k ts 50 + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES 2.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.01 0.01 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.09°C/W MAX 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 0.01 SINGLE PULSE 0.05 0.1 0.2 0.3 0.5 20 Figure 3. Switching Times 0.05 0.02 0.03 tr 0.3 VCC = 30 Vdc I /I = 250 0.2 C B IB1 = IB2 td @ VBE(off) = 0 V TJ = 25°C 0.1 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.1 0.03 0.02 tf 1.0 0.7 0.5 Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 2N6284 (NPN) 2N6287 (PNP) 3.0 SCOPE t, TIME (s) µ D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 10 7.0 5.0 VCC - 30 V 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 2N6283 2N6284 2N6286 2N6287 ACTIVE–REGION SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMP) 50 20 0.5 ms 10 1.0 ms 5.0 5.0 ms 2.0 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms dc TJ = 200°C 0.5 0.2 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C SINGLE PULSE 0.1 0.05 2.0 5.0 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6284, 2N6287 1000 TJ = 25°C VCE = 3.0 Vdc IC = 10 A 5000 2000 1000 500 200 100 500 300 10 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) Cob 2N6284 (NPN) 2N6287 (PNP) 2N6284 (NPN) 2N6287 (PNP) 1.0 Cib 200 50 20 TJ = 25°C 700 C, CAPACITANCE (PF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 200 100 0.1 0.2 500 1000 Figure 6. Small–Signal Current Gain 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 2N6283 2N6284 2N6286 2N6287 NPN 2N6284 hFE, DC CURRENT GAIN 10,000 7000 5000 VCE = 3.0 V 30,000 20,000 TJ = 150°C 10,000 3000 2000 1000 700 hFE, DC CURRENT GAIN 20,000 PNP 2N6287 25°C -55°C 500 300 200 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 VCE = 3.0 V TJ = 150°C 7000 5000 25°C 3000 2000 -55°C 1000 700 500 300 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 3.0 VCE , COLLECTOREMITTER VOLTAGE (VOLTS) VCE , COLLECTOREMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain TJ = 25°C 2.6 IC = 5.0 A 10 A 15 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 20 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 30 50 3.0 TJ = 25°C 2.6 IC = 5.0 A 15 A 10 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 1.5 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.5 20 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 5 20 2N6283 2N6284 2N6286 2N6287 PNP 2N6287 +5.0 +4.0 +3.0 *APPLIES FOR IC/IB ≤ hFE@VCE 3.0V 250 +2.0 25°C to 150°C +1.0 -55°C to + 25°C 0 -1.0 -2.0 -3.0 -4.0 -5.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN 2N6284 *θVC for VCE(sat) 25°C to + 150°C θVB for VBE 0.2 0.3 -55°C to + 25°C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 +5.0 +4.0 *APPLIES FOR IC/IB ≤ +3.0 hFE@VCE 3.0V 250 +2.0 25°C to 150°C +1.0 -55°C to + 25°C 0 -1.0 *θVC for VCE(sat) -2.0 -3.0 25°C to + 150°C θVB for VBE -4.0 -5.0 -55°C to + 25°C 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 104 103 103 VCE = 30 V TJ = 150°C 102 101 IC, COLLECTOR CURRENT (A) µ IC, COLLECTOR CURRENT (A) µ 105 100°C REVERSE FORWARD 100 102 VCE = 30 V TJ = 150°C 101 100°C 100 10-1 REVERSE 10-2 FORWARD 25°C 25°C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 10-3 +0.6 +0.4 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut–Off Region COLLECTOR NPN 2N6284 COLLECTOR PNP 2N6287 BASE BASE 8.0 k 60 8.0 k EMITTER 60 EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 -1.2 -1.4 2N6283 2N6284 2N6286 2N6287 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N6283 2N6284 2N6286 2N6287 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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