ETC FMM363HG

FMM362HG/HE,
FMM363HG/HE
4Gb/s GaAs
Standard Logic IC
FEATURES
• Ultra high speed operation up to 5 GHz from DC
• Fast rise and fall time less than 80 ps
• High input sensitivity: typ. 150mVp-p at 4 GHz (FMM362HG/HE)
• High phase margin: typ. 200 deg. at 4 GHz (FMM362HG/HE)
• Internal 50Ω input termination resistor for direct series connection
• ECL compatible input and output
• Single-5.2V power supply
• Stable operation at wide temperature range between 0 and 85°C
• Advanced packaging technology for ultra-fast application
HG
HE
DESCRIPTION
FMM362HG/HE and FMM363HG/HE are ultra high speed GaAs standard
logic ICs designed for multi-gigabit optical communication systems and
digital test instruments.
• FMM362HG/HE: Master-slave D-type Flip Flop (D-F/F) : Typ. 5 GHz
• FMM363HG/HE: 2-Input OR/NOR Gate (OR/NOR)
: Typ. 5 Gbps
These logic ICs are capable of minimizing output rise and fall time of less
than 80 ps. FMM362HG/HE has a high input sensitivity of typ. 150mVp-p
and phase margin of typ. 200 deg. at 4 GHz. FMM360 series is provided
with internal 50Ω input termination resistor for direct series connection to
eliminate the need of additional external biasing network. The GaAs die is
attached into advanced 14-pin metal/ceramic flat package designed for
ultra high speed application.
Edition 1.0
March 1999
1
FMM362HG/HE,
FMM363HG/HE
4Gb/s GaAs
Standard Logic IC
ABSOLUTE MAXIMUM RATINGS (VDD = 0V)
Rating
Symbol
Values
Unit
Supply Voltage
VSS
-7.0 to 0
V
Input Termination Voltage
VTI
-3.0 to 0
V
Output Termination Voltage
VTO
-3.0to 0
V
Input Voltage
VIN
-2.0 to 0
V
Reference Voltage
VREF
-2.0 to 0
V
Power Dissipation
PD
1.0
W
Storage Temperature
Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VSS = -5.2V, VDD = 0V)
Parameter
Symbol
Maximum Clock Frequency (Note 1)
FMM362HG/HE
(D-F/F)
Max.
Min.
Typ.
FMM363HG/HE
(OR/NOR)
Min.
Typ. Max.
Unit
4
5
-
4
5
-
Gbps
High Level Input Voltage
VIH
-1.0
-0.9
-
-1.0
-0.9
-
V
Low Level Input Voltage
VIL
-
-1.7
-1.6
-
-1.7
-1.6
V
High Level Output Voltage (Note 2)
VOH
-0.95
-
-
-0.95
-
-
V
Low Level Output Voltage (Note 2)
VOL
-
-
-1.65
-
-
-1.65
V
Output Rise Time (Note 3)
tf
-
60
80
-
60
80
ps
Output Fall Time (Note 3)
tf
-
60
80
-
60
80
ps
Iss
-
90
-
-
90
-
mA
Power Supply Current
Note 1: FMM363HG/HE-Maximum Data Rate (Gbit/s) NRZ
Note 2: 50W termination to -2V (VTO)
Note 3: 20%~80%
Edition 1.0
March 1999
2
FMM362HG/HE,
FMM363HG/HE
4Gb/s GaAs
Standard Logic IC
RECOMMENDED OPERATING CONDITIONS (VDD = 0V)
Symbol
Min.
Value
Typ.
Supply Voltage
VSS
-5.46
-5.2
-4.94
V
Output Termination Voltage
VTO
-2.1
-2.0
-1.9
V
Reference Voltage
VREF
-1.4
-1.3
-1.2
V
Output Termination Resistor*
RTO
-
50
-
Ω
Operating Case Temperature
Tc
0
-
+65
°C
Parameter
Unit
Max.
* Not required for direct series connection to FMM360 series STD logic.
TYPICAL CHARACTERISTICS
FMM363HG
Rise/Fall Time (ps)
120
OUTPUT WAVEFORMS (Tc=25°C)
FMM362HG
100
80
tr
60
tf
5.0Gb/s
40
17.4200 ns
18.4200 ns
19.4200 ns
H: 100ps/div
V: 500mV/div
20
0
0
FMM363HG
100
50
Case Temperature (°C)
360
500
300
400
200
300
200
100
100
0
0
1
2
3
4
5
6
Data Rate (Gb/s)
Edition 1.0
March 1999
3
Phase Margin (deg)
Input Sensitivity (mVp-p)
5.0Gb/s
FMM362HG(Tc=25°C)
600
16.7020 ns
17.2020 ns
17.7020 ns
H: 100ps/div
V: 500mV/div
FMM362HG/HE,
FMM363HG/HE
4Gb/s GaAs
Standard Logic IC
PULSE RESPONSE
FMM362HG(Tc=25°C)
800mV
DIN1
(1GHz)
tPHL=
175ps
tPHL=170ps
800mV
OUT
800mV
OUT
DIN2=Low
150 ps
R 0.5 TYP.
2
13
3
12
6
9
7
8
13
3
12
5
11
10
6
9
7
8
1.0
0.125 TYP.
2.0 TYP.
3.8 TYP.
0±0.1
3.8 TYP.
2
0.6±0.1
5.60±0.2
14
4
1.6 MAX
0.6±0.1
2.0 TYP.
1.6 MAX
10
1.27 TYP.
5
11
0.125 TYP.
4
1
5.2±0.2
14
10.0 TYP.
1
5.2±0.2
10.0 TYP.
0.40
R 0.5 TYP.
0.4 TYP.
UNIT: mm
“HE” PACKAGE
UNIT: mm
1.27 TYP.
“HG” PACKAGE
5.6±0.2
7.6
1.0
Edition 1.0
March 1999
4
FMM362HG/HE,
FMM363HG/HE
4Gb/s GaAs
Standard Logic IC
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.fcsi.fujitsu.com
FUJITSU MIKROELECTRONIK GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
Edition 1.0
March 1999
5