EUDYNA FRM5W621KT

InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
FEATURES
•
•
•
•
•
Data rate up to 622Mb/s
High Responsibility: typ. 0.85A/W at 1,550nm
30µm active area APD chip with GaAs pre-amplifier
High temperature operation up to +85°C
Small co-axial package with single mode fiber
KT
APPLICATIONS
• Medium bit rate long haul optical transmission systems
at STM-4 (OC-12)
DESCRIPTION
These APD preamplifiers use an InGaAs APD chip with
GaAs IC preamplifier. The KT package is designed for a
horizontal PC board mount. The LT package is secured by a
vertical flange. Each package is connected with
single-mode fiber by Nd: YAG welding. The detector
preamplifier is DC coupled and has a low electrical
output when the APD is illuminated.
Edition 1.0
March 1999
1
LT
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
-40 to +85
°C
Operating Temperature
Top
-40 to +85
°C
Supply Voltage
Vss
-7 to 0
V
APD Supply Voltage
VR (Note 1)
0 to VB
V
APD Reverse Current
IR (Note 2)
1.0
mA
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, Vss=-5.2V, unless
otherwise specified)
Symbol
Test Conditions
APD Responsivity
R15
R13
1,550nm, M=1
1,310nm, M=1
Min.
0.80
0.75
APD Breakdown Voltage
VB
ID=10µA
40
γ
(Note 3)
Parameter
Temperature Coefficient of VB
AC Transimpedance
Bandwidth
Equivalent Input
Noise Current Density
Sensitivity
Maximum Overload
Limits
Typ.
0.85
0.85
Unit
Max.
-
A/W
A/W
50
70
V
0.08
0.12
0.15
V/°C
Zt
AC-Coupled, f=10MHz,
RL=50Ω,
Pin <=-20dBm,
3.0
3.8
-
kΩ
BW
AC-Coupled, RL=50Ω,
M=3 to 15,
-3dBm from 1MHz
467
550
-
MHz
in
AC-Coupled, RL=50Ω,
Average within BW
-
2.64
3.2
-
-42
-40
dBm
Pr
622Mb/s NRZ,
PRBS=223-1,
B.E.R.=10-10,
VR is set at
optimum value
Tc=-40 to +85°C
-
-41
-39
dBm
622Mb/s NRZ, M=3,
PRBS=223-1,
B.E.R.=10-10,
VR is set at
optimum value
-5
-
-
dBm
Tc=-40 to +85°C, M=3
-7
-
-
dBm
Po
pA/
Hz
Power Supply Current
Iss
-
-
-
40
mA
Power Supply Voltage
Vss
-
-5.46
-5.2
-4.94
V
Note: (1) VB differs from device to device. VB data is attached to each devices.
(2) CW condition
(3) γ=dVB/dTC
Edition 1.0
March 1999
2
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
Fig. 1 Output Characteristics
Fig. 2 Relative Frequency Response
Tc = 25°C
Vss=-5.2V
CW condition
RL=50Ω
10MHz
Duty 50%
Mark density 50%
0.6
Relative Response (3dB/div)
Output Voltage Peak to Peak, Vpp(V)
0.8
0.4
0.2
Ta = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
Pin=-40dBm
λ = 1,310/1,550nm
M = 10
1
10
100
1000
Slope: Zt ~ 3.8kΩ
Frequency, f (MHz)
0
0
50
100
Average Photocurrent, Iave (µA)
Fig.4 Eye Diagram with a 1,550nm,
622Mb/s NRZ, 223-1 PRBS incident signal
Relative Input Noise Current Density,
in (pA/ Hz)
Fig.3 Equivalent Input Noise Current Density
10
5
Input optical wave form with Bessel filter
Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
Equivalent output wave form at
Pin=-42dBm, Tc=25°C, M=optimum
1
10
100
1000
Frequency, f (MHz)
500ps/div
Edition 1.0
March 1999
3
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
Fig.5 Sensitivity
Tc=25°C
VSS=-5.2V
AC-Coupled
RL=50Ω
λ=1,310/1,550nm
λ=1,310/1,550nm
622Mb/s, NRZ
Vss=-5.2V
M=Optimum
Duty 50%
Mark Density 50%
10-4
Bit Error Rate
Minimum Sensivity, Pr (dBm)
-35
Fig.6 Bit Error Rate
-40
10-6
Ta=+25°C
+85°C
10-8
-40°C
10-10
-45
1
10
10-12
-50
100
Multiplication Factor, M
-45
-40
-35
Received Optical Power (dBm)
“KT” PACKAGE
UNIT: mm
GND
2-C1.5
2.0±0.1
VR
2.5±0.1
VSS
Ø0.9±0.1
Ø7.2 MAX
Ø6.0 MAX
4-Ø0.45±0.05
P.C.D. 4.0±0.2
P.C.D. 2.0±0.2
8.4±0.2
14.0±0.15
17.0±0.2
VR
OUT
GND
4.4 MAX
32.0 MAX
10.0 MIN
4.2±0.2
1000 MIN
VSS
8.4±0.2
OUT
“LT” PACKAGE
UNIT: mm
GND
VR
VR
7.6 MAX
1.0±0.1
Ø0.9
VSS
OUT
Ø7.2 MAX
Ø6.0 MAX
4-Ø0.45±0.05
2.5±0.1
P.C.D. 4.0±0.2
OUT
P.C.D. 2.0±0.2
14.0±0.15
17.0±0.2
VSS
GND
10.0 MIN
32.0 MAX
1000 MIN
Edition 1.0
March 1999
4
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.fcsi.fujitsu.com
FUJITSU MIKROELECTRONIK GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
Edition 1.0
March 1999
5