InGaAs-APD/Preamp Receiver FRM5W621KT/LT FEATURES • • • • • Data rate up to 622Mb/s High Responsibility: typ. 0.85A/W at 1,550nm 30µm active area APD chip with GaAs pre-amplifier High temperature operation up to +85°C Small co-axial package with single mode fiber KT APPLICATIONS • Medium bit rate long haul optical transmission systems at STM-4 (OC-12) DESCRIPTION These APD preamplifiers use an InGaAs APD chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with single-mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the APD is illuminated. Edition 1.0 March 1999 1 LT InGaAs-APD/Preamp Receiver FRM5W621KT/LT ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top -40 to +85 °C Supply Voltage Vss -7 to 0 V APD Supply Voltage VR (Note 1) 0 to VB V APD Reverse Current IR (Note 2) 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 R13 1,550nm, M=1 1,310nm, M=1 Min. 0.80 0.75 APD Breakdown Voltage VB ID=10µA 40 γ (Note 3) Parameter Temperature Coefficient of VB AC Transimpedance Bandwidth Equivalent Input Noise Current Density Sensitivity Maximum Overload Limits Typ. 0.85 0.85 Unit Max. - A/W A/W 50 70 V 0.08 0.12 0.15 V/°C Zt AC-Coupled, f=10MHz, RL=50Ω, Pin <=-20dBm, 3.0 3.8 - kΩ BW AC-Coupled, RL=50Ω, M=3 to 15, -3dBm from 1MHz 467 550 - MHz in AC-Coupled, RL=50Ω, Average within BW - 2.64 3.2 - -42 -40 dBm Pr 622Mb/s NRZ, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85°C - -41 -39 dBm 622Mb/s NRZ, M=3, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value -5 - - dBm Tc=-40 to +85°C, M=3 -7 - - dBm Po pA/ Hz Power Supply Current Iss - - - 40 mA Power Supply Voltage Vss - -5.46 -5.2 -4.94 V Note: (1) VB differs from device to device. VB data is attached to each devices. (2) CW condition (3) γ=dVB/dTC Edition 1.0 March 1999 2 InGaAs-APD/Preamp Receiver FRM5W621KT/LT Fig. 1 Output Characteristics Fig. 2 Relative Frequency Response Tc = 25°C Vss=-5.2V CW condition RL=50Ω 10MHz Duty 50% Mark density 50% 0.6 Relative Response (3dB/div) Output Voltage Peak to Peak, Vpp(V) 0.8 0.4 0.2 Ta = 25°C Vss=-5.2V AC-Coupled RL=50Ω Pin=-40dBm λ = 1,310/1,550nm M = 10 1 10 100 1000 Slope: Zt ~ 3.8kΩ Frequency, f (MHz) 0 0 50 100 Average Photocurrent, Iave (µA) Fig.4 Eye Diagram with a 1,550nm, 622Mb/s NRZ, 223-1 PRBS incident signal Relative Input Noise Current Density, in (pA/ Hz) Fig.3 Equivalent Input Noise Current Density 10 5 Input optical wave form with Bessel filter Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω Equivalent output wave form at Pin=-42dBm, Tc=25°C, M=optimum 1 10 100 1000 Frequency, f (MHz) 500ps/div Edition 1.0 March 1999 3 InGaAs-APD/Preamp Receiver FRM5W621KT/LT Fig.5 Sensitivity Tc=25°C VSS=-5.2V AC-Coupled RL=50Ω λ=1,310/1,550nm λ=1,310/1,550nm 622Mb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% 10-4 Bit Error Rate Minimum Sensivity, Pr (dBm) -35 Fig.6 Bit Error Rate -40 10-6 Ta=+25°C +85°C 10-8 -40°C 10-10 -45 1 10 10-12 -50 100 Multiplication Factor, M -45 -40 -35 Received Optical Power (dBm) “KT” PACKAGE UNIT: mm GND 2-C1.5 2.0±0.1 VR 2.5±0.1 VSS Ø0.9±0.1 Ø7.2 MAX Ø6.0 MAX 4-Ø0.45±0.05 P.C.D. 4.0±0.2 P.C.D. 2.0±0.2 8.4±0.2 14.0±0.15 17.0±0.2 VR OUT GND 4.4 MAX 32.0 MAX 10.0 MIN 4.2±0.2 1000 MIN VSS 8.4±0.2 OUT “LT” PACKAGE UNIT: mm GND VR VR 7.6 MAX 1.0±0.1 Ø0.9 VSS OUT Ø7.2 MAX Ø6.0 MAX 4-Ø0.45±0.05 2.5±0.1 P.C.D. 4.0±0.2 OUT P.C.D. 2.0±0.2 14.0±0.15 17.0±0.2 VSS GND 10.0 MIN 32.0 MAX 1000 MIN Edition 1.0 March 1999 4 InGaAs-APD/Preamp Receiver FRM5W621KT/LT For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. www.fcsi.fujitsu.com FUJITSU MIKROELECTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 FUJITSU QUANTUM DEVICES, LTD. Asia & Japan 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 Edition 1.0 March 1999 5