EUDYNA FRM3Z231LT

InGaAs-PIN/Preamp
Receiver
FRM3Z231KT/LT
FEATURES
•
•
•
•
Data rate up to 2.5Gb/s
-23dBm typ. sensitivity
30µm active area PIN chip with GaAs pre-amplifier
Small co-axial package with multi-mode fiber
KT
APPLICATIONS
• High bit rate short haul optical transmission systems
operating at 2.5Gb/s
DESCRIPTION
These PIN preamplifiers use an InGaAs PIN chip with
GaAs IC preamplifier. The KT package is designed for a
horizontal PC board mount. The LT package is secured by a
vertical flange. Each package is connected with
multi-mode fiber by Nd: YAG welding. The detector
preamplifier is DC coupled and has a low electrical
output when the PIN is illuminated. These devices
are in compliance with ITU-T Recommendations
and meet Bellcore Requirements.
Edition 1.0
March 1999
1
LT
InGaAs-PIN/Preamp
Receiver
FRM3Z231KT/LT
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
-40 to +85
°C
Operating Temperature
Top
-40 to +85
°C
Supply Voltage
Vss
-7 to 0
V
PIN Reverse Voltage
VR
0 to 20
V
PIN Reverse Current
IR (Note 1)
2.0
mA
OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, λ=1,310/1,550nm, Vss=-5.2V,
VR=5V, unless otherwise specified)
Parameter
PIN Responsivity
AC Transimpedance
Bandwidth
Equivalent Input
Noise Current Density
Sensitivity
Maximum Overload
Symbol
Test Conditions
R15
R13
1,550nm, M=1
1,310nm, M=1
AC-coupled, f=100MHz,
RL=50Ω,
Pin <-20dBm
Zt
Min.
Limits
Typ.
0.80
0.80
Unit
0.85
0.85
Max.
-
A/W
A/W
400
600
-
Ω
GHz
BW
AC-Coupled, RL=50Ω,
Pin <-27dBm,
-3dBm from 1MHz
1.8
2.0
-
in
AC-Coupled, RL=50Ω,
Average within BW
-
6.5
8
-
-23
-22
dBm
Pr
Ta=25°C,
2.488Gb/s NRZ,
PRBS=223-1,
B.E.R.=10-10
Ta=-40 to +85°C
-
-22
-21
dBm
Ta=-40 to +85°C
2.488Gb/s NRZ,
PRBS=223-1,
B.E.R.=10-10
0
-
-
dBm
Ta=-40 to +85°C
(Note 2)
-3
-
-
dBm
Po
pA/
Hz
Reverse Voltage
VR
-
5
-
20
V
Power Supply Current
Iss
-
-
-
40
mA
Power Supply Voltage
Vss
-
-5.46
-5.2
-4.94
V
Note: (1) CW condition
(2) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output
waveform is less than 10% compared with that of the low input optical power level.
(3) Optical characteristics are specified on the condition that single mode fiber is used as the
optical source for testing.
(4) No data is available for either device.
Edition 1.0
March 1999
2
InGaAs-PIN/Preamp
Receiver
FRM3Z231KT/LT
Fig. 1 Output Characteristics
Fig. 2 Relative Frequency Response
Tc = 25°C
Vss=-5.2V
0.6 AC-Coupled
RL=50Ω
0.5 100Mb/s
Duty 50%
Mark density 50%
0.4
0.3
Relative Response (3dB/div)
Output Voltage Peak, Vpp(mV)
0.7
Zt ~ 600Ω
0.2
Ta = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
Pin=-30dBm
λ = 1,310/1,550nm
1
10
100
1000
0.1
Frequency, f (MHz)
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Average Photocurrent, Ip.ave (mA)
Fig.4 Eye Diagram with a 1,310nm,
2.5Gb/s NRZ, 223-1 PRBS incident signal
Relative Input Noise Current Density,
in (pA/sqr. Hz)
Fig.3 Equivalent Input Noise Current Density
Input optical wave form with Bessel filter
10
5
Equivalent output wave form at
Pin=-22dBm, Tc=25°C, M=optimum
Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
0
0
2.0
1.0
Frequency, f (GHz)
100ps/div
Edition 1.0
March 1999
3
InGaAs-PIN/Preamp
Receiver
FRM3Z231KT/LT
Fig.5 Bit Error Rate
λ=1,310/1,550nm
2.5Gb/s, NRZ
Vss=-5.2V
VR=5V
Bit Error Rate
10-4
10-6
Ta=+25°C
+85°C
10-8
-40°C
10-10
10-12
-30
-20
-25
Received Optical Power (dBm)
“KT” PACKAGE
UNIT: mm
GND
2-C1.5
2.0±0.1
VR
2.5±0.1
VSS
Ø0.9±0.1
Ø7.2 MAX
Ø6.0 MAX
4-Ø0.45±0.05
P.C.D. 4.0±0.2
P.C.D. 2.0±0.2
8.4±0.2
14.0±0.15
17.0±0.2
VR
OUT
GND
4.4 MAX
32.0 MAX
10.0 MIN
4.2±0.2
1000 MIN
VSS
8.4±0.2
OUT
UNIT: mm
“LT” PACKAGE
GND
VR
VR
7.6 MAX
Ø0.9
Ø6.0 MAX
1.0±0.1
VSS
OUT
Ø7.2 MAX
4-Ø0.45±0.05
2.5±0.1
P.C.D. 2.0±0.2
OUT
P.C.D. 4.0±0.2
14.0±0.15
17.0±0.2
VSS
GND
10.0 MIN
32.0 MAX
1000 MIN
Edition 1.0
March 1999
4
InGaAs-PIN/Preamp
Receiver
FRM3Z231KT/LT
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.fcsi.fujitsu.com
FUJITSU MIKROELECTRONIK GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
Edition 1.0
March 1999
5