IL1/ IL2/ IL5 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • Current Transfer Ratio (see order information) Isolation Test Voltage 5300 VRMS Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 B C 2 5 C NC 3 4 E Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection e3 i179004 Pb Pb-free Order Information • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Part Description The IL1/ IL2/ IL5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/ IL2/ IL5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. Remarks IL1 CTR > 20 %, DIP-6 IL2 CTR > 100 %, DIP-6 IL5 CTR > 50 %, DIP-6 IL1-X006 CTR > 20 %, DIP-6 400 mil (option 6) IL2-X006 CTR > 100 %, DIP-6 400 mil (option 6) IL2-X009 CTR > 100 %, SMD-6 (option 9) IL5-X009 CTR > 50 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss Derate linearly from 25 °C Document Number 83612 Rev. 1.5, 26-Oct-04 Test condition Unit 100 mW 1.33 mW/°C www.vishay.com 1 IL1/ IL2/ IL5 Vishay Semiconductors Output Parameter Test condition Collector-emitter breakdown voltage Part Symbol Value Unit IL1 BVCEO 50 V IL2 BVCEO 70 V IL5 BVCEO 70 V Emitter-base breakdown voltage BVEBO 7.0 V Collector-base breakdown voltage BVCBO 70 V IC 50 mA IC 400 mA Pdiss 200 mW 2.6 mW/°C Collector current t < 1.0 ms Power dissipation Derate linearly from 25 °C Coupler Parameter Test condition Symbol Value Ptot 250 mW 3.3 mW/°C 5300 VRMS Package power dissipation Derate linearly from 25 °C VISO Isolation test voltage (between emitter and detector referred to standard climate 23 °/50 %RH, DIN 50014) Unit Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C Ω ≥ 1012 RIO RIO ≥ 1011 Ω Storage temperature Tstg - 40 to + 150 °C Operating temperature Tamb - 40 to + 100 °C Tj 100 °C Tsld 260 °C VIO = 500 V, Tamb = 100 °C Junction temperature Soldering temperature 2.0 mm from case bottom Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.25 1.65 Unit Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reverse current VR = 6.0 V IR 0.01 Capacitance VR = 0 V, f = 1.0 MHz CO 40 pF Rthjl 750 K/W Thermal resistance junction to lead www.vishay.com 2 6.0 30 V V 10 µA Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Output Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF Collector - base capacitance VCB = 5.0 V, f = 1.0 MHz CCB 8.5 pF Emitter - base capacitance VEB = 5.0 V, f = 1.0 MHz CEB 11 Collector-emitter leakage current VCE = 10 V ICEO 5.0 Collector-emitter saturation voltage ICE = 1.0 mA, IB = 20 µA VCESAT 0.25 V Base-emitter voltage VCE = 10 V, IB = 20 µA VBE 0.65 V DC forward current gain VCE = 10 V, IB = 20 µA HFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 µA HFEsat 120 400 600 Thermal resistance junction to lead pF 50 nA 500 Rthjl K/W Coupler Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) VI-O = 0 V, f = 1.0 MHz CIO 0.6 pF Insulation resistance VI-O = 500 V RS 1014 Ω Current Transfer Ratio Parameter Test condition Current Transfer Ratio (collector-emitter saturated) Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 0.4 V IF = 10 mA, VCE = 10 V Current Transfer Ratio (collector-base) IF = 10 mA, VCB = 9.3 V Part Symbol IL1 CTRCEsat Min Typ. 75 Max Unit % IL2 CTRCEsat 170 % IL5 CTRCEsat IL1 CTRCE 20 IL2 CTRCE 100 200 500 % IL5 CTRCE 50 130 400 % IL1 CTRCB 0.25 % IL2 CTRCB 0.25 % IL5 CTRCB 0.25 % 100 80 % 300 % Switching Non-saturated Parameter Current Delay Rise time Storage Fall time Propagation H-L Propagation L-H tPLH VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output Test condition Symbol IF tD tr tS tf tPHL Unit mA µs µs µs µs µs µs IL1 20 0.8 1.9 0.2 1.4 0.7 1.4 IL2 4.0 1.7 2.6 0.4 2.2 1.2 2.3 IL5 10 1.7 2.6 0.4 2.2 1.1 2.5 Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL1/ IL2/ IL5 Vishay Semiconductors Switching Saturated Parameter Current Delay Symbol IF tD tr tS Unit mA µs µs µs IL1 20 0.8 1.2 7.4 IL2 5.0 1.0 2.0 IL5 10 1.7 7.0 Test condition Rise time Storage Fall time Propagation H-L Propagation L-H tf tPHL tPLH µs µs µs 7.6 1.6 8.6 5.4 13.5 5.4 7.4 4.6 20 2.6 7.2 VCE = 0.4 V, RL = 1.0 kΩ, VCL = 5.0 V, VTH = 1.5 V Common Mode Transient Immunity Parameter Test condition Symbol Min Typ. Max Unit Common mode rejection output high VCM = 50 VP-P, RL = 1 kΩ, IF = 10 mA | CMH | 5000 V/µs Common mode rejection output low VCM = 50 VP-P, RL = 1 kΩ, IF = 10 mA | CML | 5000 V/µs CCM 0.01 pF Common mode coupling capacitance Typical Characteristics (Tamb = 25 °C unless otherwise specified) VCC=5V VCC=5V F=10 KHz DF=50% I F =10 mA F=10 KHz DF=50% VO R L=75 Ω iil1_01 VO iil1_02 Figure 1. Non-saturated Switching Schematic www.vishay.com 4 I F =10 mA RL Figure 2. Saturated Switching Schematic Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors 1.5 NCTR - Normalized CTR IF tPHL tPLH VO tS 50% Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 0.5 NCTR(SAT) NCTR 0.0 .1 tD iil1_03 1 tF tR 10 100 I F - LED Current - mA iil1_06 Figure 3. Non-saturated Switching Timing Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED Current NCTR - Normalized CTR 1.5 IF tD VO tPLH tR VTH=1.5 V tPHL tS Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 ˇ TA= 50°C 0.5 NCTR(SAT) NCTR 0.0 tF .1 1 10 100 I F - LED Current - mA iil1_04 iil1_07 Figure 4. Saturated Switching Timing Figure 7. Normalized Non-saturated and Saturated CTR vs. LED Current 1.5 1.3 NCTR - Normalized CTR V F - Forward Voltage - V 1.4 T A = -55°C 1.2 T A = 25°C 1.1 1.0 0.9 T A = 100°C 0.8 0.7 Normalized to: VCE = 10 V, IF = 10 mA 1.0 CTRce(sat) VCE = 0.4 V TA= 70°C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 I F - Forward Current - mA 100 iil1_05 .1 1 10 I F - LED Current - mA 100 iil1_08 Figure 5. Forward Voltage vs. Forward Current Document Number 83612 Rev. 1.5, 26-Oct-04 Figure 8. Normalized Non-saturated and saturated CTR vs. LED Current www.vishay.com 5 IL1/ IL2/ IL5 Vishay Semiconductors 1.5 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 1.0 TA= 100°C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 Normalized to: IF =10 mA 1.0 Vcb = 9.3 V 0.5 25°C 50°C 70°C 0.0 100 .1 IF - LED Current - mA iil1_09 Figure 9. Normalized Non-Saturated and Saturated CTR, TA = 100 °C vs. LED Current 10 100 Figure 12. Normalized CTRcb vs. LED Current and Temperature 1000 35 30 100 25 Icb - Collector Base Photocurrent - µA Ice - Collector Current - mA 1 IF - LED Current - mA iil1_12 50°C 20 15 70°C 25°C 100°C 10 5 Icb = 1.0357 *IF ^1.3631 10 1 .1 0 0 10 20 30 40 50 IF - LED Current - mA iil1_10 .01 .1 60 iil1_13 10 Normalized to: IF = 10 mA 10 4 Normalized Photocurrent I CEO - Collector-Emitter - nA 10 5 W orst Case 10 3 10 2 V CE = 10 V 10 1 Typical 10 0 10 -1 0 20 40 60 80 iil1_14 www.vishay.com NIB-TA=-20°C NIB-TA= 25°C NIB-TA= 50°C NIB-TA= 70°C .1 .1 T A - Ambient Temperature - °C Figure 11. Collector-Emitter Leakage Current vs.Temp. 1 .01 100 iil1_11 6 100 Figure 13. Collector-Base Photocurrent vs. LED Current Figure 10. Collector-Emitter Current vs. Temperature and LED Current 10 -2 -20 1 10 IF - LED Current - mA 1 10 100 IF -LED Current- mA Figure 14. Normalized Photocurrent vs. IF and Temp. Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors 1.2 70°C Normalized to: NHFE - Normalized HFE 50¡ 1.0 Ib = 20µA 25°C Vce = 10 V -20°C 0.8 0.6 0.4 1 10 100 1000 Ib - Base Current - µA iil1_15 Figure 15. Normalized Non-saturated HFE vs. Base Current and Temperature NHFE(sat) -Normalized Saturated HFE 1.5 70°C Normalized to: V CE = 10 V 50°C 25°C -20°C 1.0 I B = 20 µA 0.5 V CE = 0.4 V 0.0 1 10 100 1000 I B - Base Current - (µA) iil1_16 Figure 16. Normalized Saturated HFE vs. Base Current and Temperature tp - Propagatio Delay µs IF = 10 mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0 10 1.5 tpLH 1 tpHL - Propagation Delay µs 2.5 1000 1.0 .1 1 10 100 RL - Collector Load Resistor - kΩ iil1_17 Figure 17. Propagation Delay vs. Collector Load Resistor Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 7 IL1/ IL2/ IL5 Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 4° typ. .018 (0.45) .022 (0.55) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 6 Option 9 .375 (9.53) .395 (10.03) .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) ref. .0040 (.102) .0098 (.249) 18493 www.vishay.com 8 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 9