The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 1999. INCH-POUND MIL-PRF-19500/523B 10 August 1999 SUPERSEDING MIL-S-19500/523A 21 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-3). 1.3 Maximum ratings. PT 1/ TA = +25°C PT 2/ TC = +25°C VCBO VCEO VEBO IC IB TOP and TSTG RθJC Max W W V dc V dc V dc A dc A dc °C °C/W 40 60 80 5.0 5.0 5.0 10 10 10 0.25 0.25 0.25 -55 to +175 -55 to +175 -55 to +175 1.75 1.75 1.75 2N6383 6.0 100 40 2N6384 6.0 100 60 2N6385 6.0 100 80 1/ Derate linearly 34.2 mW/°C above TA > +25°C. 2/ Derate linearly 571 mW/°C above TC > +25°C. 1.4 Primary electrical characteristics. hFE1 VCE(SAT)1 VCE(SAT)2 VBE(ON)1 Cobo |hfe| Switching VCE = 3.0 V dc IC = 5.0 A dc 1/ IC = 5.0 A dc IB = 10 mA dc 1/ IC = 10 A dc IB = 0.1 A dc 1/ VCE = 3.0 V dc IC = 5.0 A dc 1/ VCB = 10 V dc IE = 0 100 kHz < f ≤ 1 MHz VCE = 5.0 V dc IC = 1.0 A dc f = 1 MHz VCC = 30 V dc ICC = 5.0 A dc IB1 = 20 mA dc Min 1,000 Max 20,000 1/ Pulsed, see 4.5.1 V dc V dc V dc pF 2.0 3.0 2.8 200 20 300 ton toff µs µs 2.5 10.0 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/523B 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.3). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. The preferred measurements used herein are the metric units. However, this transistor was designed using inch-pound units of measurement. In case of conflicts between the metric and inch-pound units, the inch-pound units shall rule. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2) 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical requirements shall be the subgroups specified in table I herein. 2 MIL-PRF-19500/523B FIGURE 1. Dimensions and configuration (T0-3). 3 MIL-PRF-19500/523B Dimensions Symbol Inches Min CD Millimeters Max Min 0.875 Max 22.23 CH 0.250 0.450 6.35 11.43 HR 0.495 0.525 12.57 13.34 HR1 0.131 0.188 3.33 4.78 HT 0.050 0.135 1.27 3.43 LD 0.038 0.043 0.97 1.09 LL 0.312 7.92 0.050 L1 Notes 1.27 MHD 0.151 0.161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS 0.420 0.440 10.67 11.18 3 PS1 0.205 0.225 5.21 5.72 3 s1 0.655 0.675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. These dimensions should be measured at points 0.050 inch (1.27 mm) and 0.055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on the seating plane side. 6. Collector is electrically connected to the case. FIGURE 1. Dimensions and configuration (T0-3) continued. 4 MIL-PRF-19500/523B 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels only 11 ICEX1 and hFE1 12 See 4.3.1 13 ∆ICEX1 = 100 percent of initial value or 100 µA dc, whichever is greater; ∆hFE1 = ± 25 percent of initial value; subgroup 2 of table I herein. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +162.5°C ±12.5°C; 2N6383 = VCB = 30 V dc; 2N6384 = VCB = 40 V dc; 2N6385 = VCB = 60 V dc. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIb of MIL-PRF-19500. Subgroup Method Condition B3 1027 For solder die attach: VCB ≥ 10 V dc, 2,000 cycles, TA ≤ 35°C. B3 1026 For eutectic die attach: VCB ≥ 10 V dc, TA ≤ 35°C adjust PT to achieve TJ = 150°C minimum. B5 3131 VCE = 20 V dc; IC = 10 A; RθJC = 1.75°C/W maximum. 5 MIL-PRF-19500/523B 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end points) shall be in accordance with table I, subgroup 2 herein. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A; weight = 10 pounds; t = 15 s. C6 1027 For solder die attach: VCB ≥ 10 V dc, 6,000 cycles, TA ≤ 35°C. C6 1026 For eutectic die attach: VCB ≥ 10 V dc, TA ≤ 35°C adjust PT to achieve TJ = 150°C minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 6 MIL-PRF-19500/523B TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical Examination 2071 Subgroup 2 Collector to emitter breakdown voltage 3011 Bias condition D IC = 200 mA dc, Pulsed (see 4.5.1) V(BR)CEO 2N6383 2N6384 2N6385 Collector to emitter breakdown voltage 3011 Bias condition B IC = 200 mA dc RBB = 100Ω, Pulsed (see 4.5.1) 3041 2N6383 2N6384 2N6385 Bias condition D V dc V dc V dc 40 60 80 V dc V dc V dc V(BR)CER 2N6383 2N6384 2N6385 Collector to emitter cutoff current 40 60 80 ICEO 1.0 mA dc VCE = 40 V dc VCE = 60 V dc VCE = 80 V dc Emitter to base cutoff current 3061 Bias condition D VEB = 5.0 V dc IEBO 5.0 mA dc Collector to emitter cutoff current 3041 Bias condition A VBE = 1.5 V dc ICEX1 0.3 mA dc ICBO1 1.0 mA dc 2N6383 2N6384 2N6385 VCE = 40 V dc VCE = 60 V dc VCE = 80 V dc Collector to base cutoff current 2N6383 2N6384 2N6385 3036 Bias condition D VCE = 40 V dc VCE = 60 V dc VCE = 80 V dc See footnote at end of table. 7 MIL-PRF-19500/523B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 – Continued Base emitter voltage (unsaturated) 3066 Test condition B VCE = 3.0 V dc, IC = 5.0 A dc VBE(on)1 2.8 V dc Base emitter voltage (unsaturated) 3066 Test condition B VCE = 3.0 V dc, IC = 10 A dc pulsed (see 4.5.1) VBE(on)2 4.5 V dc Saturated voltage and resistance 3071 IC = 5.0 A dc IB = 10 mA dc, pulsed (see 4.5.1) VCE(sat)1 2.0 V dc Saturated voltage and resistance 3071 IC = 10 A dc IB = 0.1 A dc, pulsed (see 4.5.1) VCE(sat)2 3.0 V dc Forward-current transfer ratio 3076 VCE = 3 V dc IC = 5 A dc; pulsed (see 4.5.1) hFE1 1,000 Forward current transfer ratio 3076 VCE = 3.0 V dc IC = 10 A dc, pulsed (see 4.5.1) hFE2 100 20,000 Subgroup 3 High temperature operation: Collector to emitter cutoff current TA = +150°C 3041 2N6383 2N6384 2N6385 3.0 ICEX2 VCE = 40 V dc VCE = 60 V dc VCE = 80 V dc Low temperature operation: Forward-current transfer ratio Bias condition A VBE = 1.5 V dc TA = -55°C 3076 VCE = 3.0 V dc IC = 5.0 A dc, pulsed (see 4.5.1) See footnote at end of table. 8 hFE3 200 mA dc MIL-PRF-19500/523B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 2 Symbol Limits Min Unit Max Subgroup 4 Pulse response Turn-on time VCC = 30 V dc IC = 5.0 A dc IB1 = 20 mA dc ton 2.5 µs Turn-off time VCC = 30 V dc IC = 5.0 A dc IB1 = - IB2 = 20 mA dc toff 10 µs Small-signal shortcircuit forwardcurrent transfer ratio 3306 VCE = 5 V dc IC = 1 A dc f = 1.0 MHz |hfe| Open circuit output Capacitance 3236 VCB = 10 V dc; IE = 0 100 kHz ≤ f ≤ 1 MHz Cobo 3053 TC = +25°C; t = 1.0 s, 1 cycle See figure 3 Subgroup 5 Safe operating area (continuous dc) Test 1 (Both device types) Test 2 (All device types) VCE = 10 V dc; IC = 10 A dc VCE = 30 V dc; IC = 3.33 A dc Test 3 2N6383 VCE = 40 V dc; IC = 1.5 A dc 2N6384 VCE = 60 V dc; IC = 0.4 A dc 2N6385 VCE = 80 V dc; IC = 0.16 A dc See footnote at end of table. 9 20 300 200 pF MIL-PRF-19500/523B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 – Continued Electrical measurements Safe operating area (switching) See table II, steps 1 and 3 3053 Test 1 Electrical measurements Test 2 Safe operating area (switching) Load condition C (unclamped inductive load) See figure 4 TC = 25°C, duty cycle ≤ 10 percent RS = 0.1Ω tp approximately 1 ms (vary to obtain IC) RBB1 = 1 kΩ; VBB1 = 10 V dc; RBB2 = ∞; VBB2 = 0 V; VCC = 30 V dc; IC = 10 A dc; RL ≤ 0.5Ω; L = 1 mH at 10 A dc See table I, Subgroup 2. tp approximately 1 ms (vary to obtain IC) RBB1 = 10 KΩ; VBB1 = 10 V dc; RBB2 = ∞; VBB2 = 0 V; VCC = 30 V dc; IC = 0.2 A dc; L = 100 mH at 0.2 A dc; RL ≤ 0.5Ω Load condition B (clamped inductive load) See figure 5.TA = 25°C, tr + tf ≤ 1.0 µs, duty cycle ≤ 10 percent; tp = 5 ms (vary to obtain IC) Rs = 0.1 Ω; VCC = 10 V dc; IC = 10 A dc 2N6383 Clamp voltage = 40 V dc 2N6384 Clamp voltage = 60 V dc 2N6385 Clamp voltage = 80 V dc Device fails if clamp voltage is not reached Electrical measurements See table I, subgroup 2 1/ For sampling plan, see MIL-PRF-19500. 10 Symbo l Limits Min Unit Max MIL-PRF-19500/523B NOTES: 1. 2. 3. The rise time (tr) and fall time (tf) of the applied pulse shall be each < 20 nanoseconds; duty cycle < 2 percent, generator source impedance shall be 50Ω; pulse width = 20 µs. Output sampling oscilloscope: ZIN > 100 kΩ; CIN < 50 pF; rise time < 2 nanoseconds. Pulse In shall be 10 V maximum. FIGURE 2. Pulse response test circuit. 11 MIL-PRF-19500/523B FIGURE 3. Maximum safe operating graph (continuous dc). 12 MIL-PRF-19500/523B FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 13 MIL-PRF-19500/523B NOTES: 1. Either a clamping circuit or clamping diode may be used. 2. The coil used shall provide a minimum inductance of 1 mH at 10 A with a max dc resistance of 0.1 ohm. 3. RS ≤ 0.1 oh. 12 W, 1 percent tolerance max (noninductive). 4. With switch S1 closed, set the specified test conditions. 5. Open S1. Device fails if clamp voltage is not reached and maintained until the current returns to zero. 6. Perform specified end point tests. FIGURE 5. Clamped inductive sweep test circuit. 14 MIL-PRF-19500/523B 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.2.1). b. The lead finish as specified (see 3.4.1). c. Type designation and quality assurance level. d. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List QML No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodian: Army - CR Navy - EC Air Force - 11 NASA – NA DLA - CC Preparing activity: DLA - CC Review activities: Air Force – 13, 19 (Project 5961-2074) 15 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. 1. DOCUMENT NUMBER MIL-PRF-19500/523B I RECOMMEND A CHANGE: 2. DOCUMENT DATE 990810 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6383, 2N6384, 2N6385 JAN, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99